Authors:
FERRER JC
PEIRO F
CORNET A
MORANTE JR
UTZMEIER T
ARMELLES G
BRIONES F
Citation: Jc. Ferrer et al., MORPHOLOGY EVOLUTION OF INSB ISLAND GROWN ON INP SUBSTRATES BY ATOMICLAYER MOLECULAR-BEAM EPITAXY, Microelectronic engineering, 43-4, 1998, pp. 51-57
Citation: Pa. Postigo et al., STRAIN EFFECTS ON THE SURFACE OPTICAL-TRANSITIONS OF GAAS, Physical review. B, Condensed matter, 58(15), 1998, pp. 9659-9661
Authors:
POSTIGO PA
ARMELLES G
UTZMEIER T
BRIONES F
Citation: Pa. Postigo et al., IN-SITU OPTICAL SPECTROSCOPY OF GA DIMERS ON GAP, GAAS, AND GASB BY SURFACE CHEMICAL MODULATION, Physical review. B, Condensed matter, 57(3), 1998, pp. 1359-1361
Authors:
POSTIGO PA
ARMELLES G
UTZMEIER T
BRIONES F
Citation: Pa. Postigo et al., IN-SITU OBSERVATION OF SURFACE OPTICAL ANISOTROPY ON INP, INAS, AND INSB BY CHEMICAL MODULATION SPECTROSCOPY, Physical review. B, Condensed matter, 57(3), 1998, pp. 1362-1365
Authors:
RELLINGHAUS B
DEAVILA SF
WELLER D
ARMELLES G
BEYERS R
KELLOCK A
Citation: B. Rellinghaus et al., ENHANCED MAGNETOOPTICAL KERR-EFFECT IN OXIDIZED CO THIN-FILMS, Journal of applied physics, 83(11), 1998, pp. 5621-5625
Authors:
MLAYAH A
GRAC R
ARMELLES G
CARLES R
ZWICK A
BRIONES F
Citation: A. Mlayah et al., OBSERVATION OF STANDING ACOUSTIC-WAVES BY RESONANT RAMAN-SCATTERING (VOL 78, PG 4119, 1997), Physical review letters, 79(18), 1997, pp. 3544-3544
Authors:
POSTIGO PA
UTZMEIER T
ARMELLES G
BRIONES F
Citation: Pa. Postigo et al., A NEW IN-SITU III-V SURFACE CHARACTERIZATION TECHNIQUE - CHEMICAL MODULATION SPECTROSCOPY, Journal of crystal growth, 175, 1997, pp. 298-303
Authors:
ARMELLES G
WELLER D
RELLINGHAUS B
CARO P
CEBOLLADA A
BRIONES F
Citation: G. Armelles et al., MAGNETOOPTICAL SPECTRA OF LONG-RANGE CHEMICALLY ORDERED FEPD(001) ALLOY-FILMS, Journal of applied physics, 82(9), 1997, pp. 4449-4452
Authors:
ARMELLES G
WELLER D
RELLINGHAUS B
FARROW RFC
TONEY MF
CARO P
CEBOLLADA A
ALONSO MI
Citation: G. Armelles et al., ORIGIN OF STRONG INTRINSIC KERR-EFFECT IN FEPT AND FEPD ORDERED COMPOUNDS, IEEE transactions on magnetics, 33(5), 1997, pp. 3220-3222
Authors:
RELLINGHAUS B
DEAVILA SF
ARMELLES G
BEYERS R
KELLOCK A
WELLER D
Citation: B. Rellinghaus et al., NATURAL OXIDE FORMATION ON COBALT INVESTIGATED WITH THE MAGNETOOPTICAL KERR-EFFECT, IEEE transactions on magnetics, 33(5), 1997, pp. 3238-3240
Authors:
CASTRILLO P
ARMELLES G
SILVEIRA JP
BRIONES F
BARBOLLA J
Citation: P. Castrillo et al., OPTICAL PHONONS OF STRAINED GAAS GAP QUANTUM-WELLS STUDIED BY RAMAN-SPECTROSCOPY/, Applied physics letters, 71(10), 1997, pp. 1353-1355
Authors:
UTZMEIER T
ARMELLES G
POSTIGO PA
BRIONES F
CASTRILLO P
SANZHERVAS A
AGUILAR M
ABRIL EJ
Citation: T. Utzmeier et al., GROWTH AND CHARACTERIZATION OF (INSB)(M)(INP)(N) SHORT-PERIOD SUPERLATTICES, Applied physics letters, 70(22), 1997, pp. 3017-3019
Citation: Jr. Sendra et al., OPTICAL STUDY OF INP ETCHED IN METHANE-BASED PLASMAS BY REACTIVE ION-BEAM ETCHING, Semiconductor science and technology, 11(2), 1996, pp. 238-242
Citation: Ja. Prieto et G. Armelles, E(1) TRANSITION IN (113)-ORIENTED GAAS ALAS MULTIPLE-QUANTUM WELLS - CONFINEMENT EFFECTS AND OPTICAL ANISOTROPY/, Physical review. B, Condensed matter, 53(11), 1996, pp. 6912-6914
Citation: P. Castrillo et al., CONSEQUENCES OF INTERFACE CORRUGATION ON THE LATTICE-DYNAMICS AND RAMAN-SPECTRA IN HIGH-INDEX ALAS GAAS SUPERLATTICES/, Solid-state electronics, 40(1-8), 1996, pp. 175-180
Authors:
UTZMEIER T
ARMELLES G
POSTIGO PA
BRIONES F
Citation: T. Utzmeier et al., GROWTH AND CHARACTERIZATION OF INSB INP SHORT-PERIOD STRAINED-LAYER SUPERLATTICES GROWN BY ALMBE/, Solid-state electronics, 40(1-8), 1996, pp. 621-626
Citation: Ja. Prieto et al., DEPENDENCE OF THE LINEAR AND QUADRATIC ELECTROOPTICAL COEFFICIENTS ONTHE QUANTUM-WELL THICKNESS, Solid-state electronics, 40(1-8), 1996, pp. 767-770
Citation: P. Castrillo et al., RAMAN RESPONSE OF (11N)-ORIENTED GAAS ALAS SUPERLATTICES WITHIN THE FRAMEWORK OF THE BOND POLARIZABILITY MODEL/, Solid state communications, 98(4), 1996, pp. 307-311
Authors:
SENDRA JR
ARMELLES G
UTZMEIER T
ANGUITA J
BRIONES F
Citation: Jr. Sendra et al., RESONANT RAMAN-SCATTERING STUDY OF INSB ETCHED BY REACTIVE ION-BEAM ETCHING, Journal of applied physics, 79(11), 1996, pp. 8853-8855