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Results: 1-20 |
Results: 20
INVESTIGATION OF PROCESS-INDUCED DEFECTS IN SIGE SI HETEROJUNCTION BIPOLAR-TRANSISTORS BY DEEP-LEVEL TRANSIENT SPECTROSCOPY/
Authors: SOUIFI A DEBARROS O BREMOND G LETRON B MOUIS M VINCENT G ASHBURN P
Citation: A. Souifi et al., INVESTIGATION OF PROCESS-INDUCED DEFECTS IN SIGE SI HETEROJUNCTION BIPOLAR-TRANSISTORS BY DEEP-LEVEL TRANSIENT SPECTROSCOPY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1745-1749
EFFECTS OF FLUORINE IN SILICON SOLAR-CELLS WITH POLYSILICON CONTACTS
Authors: CASTANER L SILVESTRE S CARTER J PARTON D ASHBURN P
Citation: L. Castaner et al., EFFECTS OF FLUORINE IN SILICON SOLAR-CELLS WITH POLYSILICON CONTACTS, Solar energy materials and solar cells, 53(1-2), 1998, pp. 115-129
ANALYSIS OF SI-GE HETEROJUNCTION INTEGRATED INJECTION LOGIC ((IL)-L-2) STRUCTURES USING A STORED CHARGE MODEL
Authors: WAINWRIGHT SP HALL S ASHBURN P
Citation: Sp. Wainwright et al., ANALYSIS OF SI-GE HETEROJUNCTION INTEGRATED INJECTION LOGIC ((IL)-L-2) STRUCTURES USING A STORED CHARGE MODEL, I.E.E.E. transactions on electron devices, 45(12), 1998, pp. 2437-2447
DETERMINATION OF BANDGAP NARROWING AND PARASITIC ENERGY BARRIERS IN SIGE HBTS INTEGRATED IN A BIPOLAR TECHNOLOGY
Authors: LETRON B HASHIM MDR ASHBURN P MOUIS M CHANTRE A VINCENT G
Citation: B. Letron et al., DETERMINATION OF BANDGAP NARROWING AND PARASITIC ENERGY BARRIERS IN SIGE HBTS INTEGRATED IN A BIPOLAR TECHNOLOGY, I.E.E.E. transactions on electron devices, 44(5), 1997, pp. 715-722
EFFECT OF TRANSISTOR GEOMETRY ON THE ELECTRICAL CHARACTERISTICS OF SI1-XGEX HETEROJUNCTION BIPOLAR-TRANSISTORS AT LOW-TEMPERATURES
Authors: HASHIM MDR LEVER RF ASHBURN P PARKER GJ
Citation: Mdr. Hashim et al., EFFECT OF TRANSISTOR GEOMETRY ON THE ELECTRICAL CHARACTERISTICS OF SI1-XGEX HETEROJUNCTION BIPOLAR-TRANSISTORS AT LOW-TEMPERATURES, Journal de physique. IV, 6(C3), 1996, pp. 119-124
ELECTRICAL DETERMINATION OF BANDGAP NARROWING IN BIPOLAR-TRANSISTORS WITH EPITAXIAL SI, EPITAXIAL SI1-XGEX, AND ION-IMPLANTED BASES
Authors: ASHBURN P BOUSSETTA H HASHIM MDR CHANTRE A MOUIS M PARKER GJ VINCENT G
Citation: P. Ashburn et al., ELECTRICAL DETERMINATION OF BANDGAP NARROWING IN BIPOLAR-TRANSISTORS WITH EPITAXIAL SI, EPITAXIAL SI1-XGEX, AND ION-IMPLANTED BASES, I.E.E.E. transactions on electron devices, 43(5), 1996, pp. 774-783
FULLY SELF-ALIGNED SI BIPOLAR-TRANSISTOR WITH COLLECTOR AND BASE GROWN USING SILANE-ONLY SELECTIVE EPITAXY
Authors: GREGORY HJ BONAR JM ASHBURN P PARKER GJ
Citation: Hj. Gregory et al., FULLY SELF-ALIGNED SI BIPOLAR-TRANSISTOR WITH COLLECTOR AND BASE GROWN USING SILANE-ONLY SELECTIVE EPITAXY, Electronics Letters, 32(9), 1996, pp. 850-851
SAFETY AND EFFICACY OF CONTROLLED-RELEASE MESALAMINE FOR MAINTENANCE OF REMISSION IN ULCERATIVE-COLITIS
Authors: MINER P HANAUER S ROBINSON M SCHWARTZ J ARORA S BRIGGS RL LAWLIS V FELGER C KITZMILLER G LIEBERMANN T FRACHTMAN R FISCHER C CELLO JP GRENDELL J SATOW J HANAUER SB HANAN I SCHULTZ P JAMES D MERTESDORF J HIESTAND F TUCKER P ROBERTS T BRUNDAGE P GRIFFIN T BECK JE RICK G HARTONG W BUSER W BRAND S BRYANT P KLIEWER M MELLOW M MCFADDEN R NEUMANN D HELIN K PRIVETTCOINTEPAS CJ MEEK RR ROUFAIL W BRICE R HUGHES TP FINA M MURPHY D CLINARD L ALLMAN D BOWEN B SCHWARTZ JL JURCIK I WHITE LB COHEN M SALES D GOCHNOUR S YORK NM WEINBERG D DUBOW RA PRIES J TOMBERS J GILBERSTADT S HANNA P WATSON MJ MATTISON M SAFDI M SAFDI A SCHNEIDER R WAISSBLUTH G KRAINES MD MAGAW L EMRATH N KAPLAN M MCKUSICK A ROSENBERG F KIRCH EP ALLEN HA WEBER B BARRIERO MA BANK L GITCHELL L STRUM WB GOODMAN L MATTER S MILLER D ANTONSON C CHRISTIAN R BIDDLE W CLARK S SUTTON DS KATON RM SMITH F BENNER K KEEFFE E LIEBERMAN D MELNYK C LINDENBURG F WEBSTER S ZFASS A KIRBY D LEE A YEE YS GOSHGARIANPATRICK P BARISH C ASHBURN P WATERMAN DC PATTERSON PM CARLISLE WR OUTIM L TOBIAS R COCHRAN JL BRISTOW WJ MILLER PD INGLE S KERR RM CASTELL D WU WC RICHTER JE GILLIAM JH STARK G LAW R MALONE N ROI L COEN M MOORE D MCPHERSON M
Citation: P. Miner et al., SAFETY AND EFFICACY OF CONTROLLED-RELEASE MESALAMINE FOR MAINTENANCE OF REMISSION IN ULCERATIVE-COLITIS, Digestive diseases and sciences, 40(2), 1995, pp. 296-304
REDUCTION OF 1 F NOISE IN POLYSILICON EMITTER BIPOLAR-TRANSISTORS/
Authors: SIABISHAHRIVAR N REDMANWHITE W ASHBURN P KEMHADJIAN HA
Citation: N. Siabishahrivar et al., REDUCTION OF 1 F NOISE IN POLYSILICON EMITTER BIPOLAR-TRANSISTORS/, Solid-state electronics, 38(2), 1995, pp. 389-400
PHYSICAL MODELING OF THE ENHANCED DIFFUSION OF BORON DUE TO ION-IMPLANTATION IN THIN-BASE NPN BIPOLAR-TRANSISTORS
Authors: MOUIS M GREGORY HJ DENORME S MATHIOT D ASHBURN P ROBBINS DJ GLASPER JL
Citation: M. Mouis et al., PHYSICAL MODELING OF THE ENHANCED DIFFUSION OF BORON DUE TO ION-IMPLANTATION IN THIN-BASE NPN BIPOLAR-TRANSISTORS, Microelectronics, 26(2-3), 1995, pp. 255-259
ANALYSIS AND MODELING OF THE BASE CURRENTS OF SI SI1-XGEX HETEROJUNCTION BIPOLAR-TRANSISTORS FABRICATED IN HIGH AND LOW-OXYGEN CONTENT MATERIAL/
Authors: SHAFI ZA ASHBURN P POST IRC ROBBINS DJ LEONG WY GIBBINGS CJ NIGRIN S
Citation: Za. Shafi et al., ANALYSIS AND MODELING OF THE BASE CURRENTS OF SI SI1-XGEX HETEROJUNCTION BIPOLAR-TRANSISTORS FABRICATED IN HIGH AND LOW-OXYGEN CONTENT MATERIAL/, Journal of applied physics, 78(4), 1995, pp. 2823-2829
EPITAXIAL REGROWTH OF N-DEGREES-C, INDUCED BY FLUORINE IMPLANTATION( POLYCRYSTALLINE SILICON AT 850)
Authors: MOISEIWITSCH NE MARSH C ASHBURN P BOOKER GR
Citation: Ne. Moiseiwitsch et al., EPITAXIAL REGROWTH OF N-DEGREES-C, INDUCED BY FLUORINE IMPLANTATION( POLYCRYSTALLINE SILICON AT 850), Applied physics letters, 66(15), 1995, pp. 1918-1920
THEORETICAL AND EXPERIMENTAL-STUDY OF HIGH-ENERGY IMPLANTED COLLECTORS FOR BIPOLAR-TRANSISTORS IN BIPOLAR COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TRANSISTOR TECHNOLOGY
Authors: MARTY A MOUAILHAT A ASHBURN P
Citation: A. Marty et al., THEORETICAL AND EXPERIMENTAL-STUDY OF HIGH-ENERGY IMPLANTED COLLECTORS FOR BIPOLAR-TRANSISTORS IN BIPOLAR COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TRANSISTOR TECHNOLOGY, JPN J A P 1, 33(7A), 1994, pp. 3844-3852
AN INVESTIGATION OF THE INCONSISTENCY IN BARRIER HEIGHTS FOR PNP AND NPN POLYSILICON EMITTER BIPOLAR-TRANSISTORS USING A NEW TUNNELING MODEL
Authors: POST IRC ASHBURN P NOUAILHAT A
Citation: Irc. Post et al., AN INVESTIGATION OF THE INCONSISTENCY IN BARRIER HEIGHTS FOR PNP AND NPN POLYSILICON EMITTER BIPOLAR-TRANSISTORS USING A NEW TUNNELING MODEL, JPN J A P 1, 33(3A), 1994, pp. 1275-1284
LOW-TEMPERATURE PERFORMANCE OF SELF-ALIGNED ETCHED POLYSILICON EMITTER PSEUDOHETEROJUNCTION BIPOLAR-TRANSISTORS
Authors: GIROULTMATLAKOWSKI G BOUSSETA H LETRON B DUTARTRE D WARREN P BOUZID MJ NOUAILHAT A ASHBURN P CHANTRE A
Citation: G. Giroultmatlakowski et al., LOW-TEMPERATURE PERFORMANCE OF SELF-ALIGNED ETCHED POLYSILICON EMITTER PSEUDOHETEROJUNCTION BIPOLAR-TRANSISTORS, Journal de physique. IV, 4(C6), 1994, pp. 111-115
MEASUREMENT OF THE BANDGAP NARROWING IN THE BASE OF SI HOMOJUNCTION AND SI SI1-XGEX HETEROJUNCTION BIPOLAR-TRANSISTORS FROM THE TEMPERATURE-DEPENDENCE OF THE COLLECTOR CURRENT
Authors: ASHBURN P NOUAILHAT A CHANTRE A
Citation: P. Ashburn et al., MEASUREMENT OF THE BANDGAP NARROWING IN THE BASE OF SI HOMOJUNCTION AND SI SI1-XGEX HETEROJUNCTION BIPOLAR-TRANSISTORS FROM THE TEMPERATURE-DEPENDENCE OF THE COLLECTOR CURRENT, Journal de physique. IV, 4(C6), 1994, pp. 123-126
THE BENEFITS OF FLUORINE IN PNP POLYSILICON EMITTER BIPOLAR-TRANSISTORS
Authors: MOISEIWITSCH NE ASHBURN P
Citation: Ne. Moiseiwitsch et P. Ashburn, THE BENEFITS OF FLUORINE IN PNP POLYSILICON EMITTER BIPOLAR-TRANSISTORS, I.E.E.E. transactions on electron devices, 41(7), 1994, pp. 1249-1256
OPTIMIZATION OF BICMOS BUFFERS FOR LOW-VOLTAGE APPLICATIONS
Authors: ROUTLEY P BRUNNSCHWEILER A ASHBURN P
Citation: P. Routley et al., OPTIMIZATION OF BICMOS BUFFERS FOR LOW-VOLTAGE APPLICATIONS, Electronics Letters, 30(13), 1994, pp. 1046-1048
BIPOLAR-TRANSISTOR ACTION FROM AN AMORPHOUS CARBON SILICON HETEROJUNCTION EMITTER/
Authors: CHAN KK AMARATUNGA GAJ SHAFI ZA ASHBURN P WONG SP
Citation: Kk. Chan et al., BIPOLAR-TRANSISTOR ACTION FROM AN AMORPHOUS CARBON SILICON HETEROJUNCTION EMITTER/, DIAMOND AND RELATED MATERIALS, 2(11), 1993, pp. 1445-1448
APPLICATION OF A MULTIVARIABLE OPTIMIZER TO THE DESIGN OF CMOS BUFFERS
Authors: ROUTLEY P BRUNNSCHWEILER A ASHBURN P
Citation: P. Routley et al., APPLICATION OF A MULTIVARIABLE OPTIMIZER TO THE DESIGN OF CMOS BUFFERS, Electronics Letters, 29(25), 1993, pp. 2187-2188
Risultati: 1-20 |