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Results: 1-21 |
Results: 21
ISOLATED INTERSTITIAL HYDROGEN MOLECULES IN HYDROGENATED CRYSTALLINE SILICON
Authors: PRITCHARD RE ASHWIN MJ TUCKER JH NEWMAN RC
Citation: Re. Pritchard et al., ISOLATED INTERSTITIAL HYDROGEN MOLECULES IN HYDROGENATED CRYSTALLINE SILICON, Physical review. B, Condensed matter, 57(24), 1998, pp. 15048-15051
GROWTH OF SI-DOPED GAAS(110) THIN-FILMS BY MOLECULAR-BEAM EPITAXY - SI SITE OCCUPATION AND THE ROLE OF ARSENIC
Authors: TOK ES NEAVE JH ASHWIN MJ JOYCE BA JONES TS
Citation: Es. Tok et al., GROWTH OF SI-DOPED GAAS(110) THIN-FILMS BY MOLECULAR-BEAM EPITAXY - SI SITE OCCUPATION AND THE ROLE OF ARSENIC, Journal of applied physics, 83(8), 1998, pp. 4160-4167
SHALLOW THERMAL DONORS ASSOCIATED WITH H, AL AND N IN ANNEALED CZOCHRALSKI SILICON DISTINGUISHED BY INFRARED-SPECTROSCOPY
Authors: PRITCHARD RE ASHWIN MJ TUCKER JH NEWMAN RC LIGHTOWLERS EC GREGORKIEWICZ T ZEVENBERGEN IS AMMERLAAN CAJ FALSTER R BINNS MJ
Citation: Re. Pritchard et al., SHALLOW THERMAL DONORS ASSOCIATED WITH H, AL AND N IN ANNEALED CZOCHRALSKI SILICON DISTINGUISHED BY INFRARED-SPECTROSCOPY, Semiconductor science and technology, 12(11), 1997, pp. 1404-1408
INTERACTIONS OF HYDROGEN MOLECULES WITH BOND-CENTERED INTERSTITIAL OXYGEN AND ANOTHER DEFECT CENTER IN SILICON
Authors: PRITCHARD RE ASHWIN MJ TUCKER JH NEWMAN RC LIGHTOWLERS EC BINNS MJ MCQUAID SA FALSTER R
Citation: Re. Pritchard et al., INTERACTIONS OF HYDROGEN MOLECULES WITH BOND-CENTERED INTERSTITIAL OXYGEN AND ANOTHER DEFECT CENTER IN SILICON, Physical review. B, Condensed matter, 56(20), 1997, pp. 13118-13125
ACCURATE RBS MEASUREMENTS OF THE INDIUM CONTENT OF INGAAS THIN-FILMS
Authors: JEYNES C JAFRI ZH WEBB RP KIMBER AC ASHWIN MJ
Citation: C. Jeynes et al., ACCURATE RBS MEASUREMENTS OF THE INDIUM CONTENT OF INGAAS THIN-FILMS, Surface and interface analysis, 25(4), 1997, pp. 254-260
THE INFRARED VIBRATIONAL ABSORPTION-SPECTRUM OF THE SI-X DEFECT PRESENT IN HEAVILY SI DOPED GAAS
Authors: ASHWIN MJ NEWMAN RC MURAKI K
Citation: Mj. Ashwin et al., THE INFRARED VIBRATIONAL ABSORPTION-SPECTRUM OF THE SI-X DEFECT PRESENT IN HEAVILY SI DOPED GAAS, Journal of applied physics, 82(1), 1997, pp. 137-141
OBSERVATION OF GA VACANCIES IN SILICON DELTA-DOPING SUPERLATTICES IN (001) GAAS
Authors: LAINE T SAARINEN K MAKINEN J HAUTOJARVI P CORBEL C ASHWIN MJ NEWMAN RC
Citation: T. Laine et al., OBSERVATION OF GA VACANCIES IN SILICON DELTA-DOPING SUPERLATTICES IN (001) GAAS, Applied physics letters, 71(13), 1997, pp. 1843-1845
LATTICE SITES OF SILICON IMPURITIES IN ALGAAS GROWN BY LIQUID-PHASE EPITAXY
Authors: KACZOR P ASHWIN MJ DOBOSZ D ZYTKIEWICZ ZR NEWMAN RC DOBACZEWSKI L
Citation: P. Kaczor et al., LATTICE SITES OF SILICON IMPURITIES IN ALGAAS GROWN BY LIQUID-PHASE EPITAXY, Acta Physica Polonica. A, 90(5), 1996, pp. 865-868
LATTICE LOCATIONS OF SILICON ATOMS IN DELTA-DOPED LAYERS IN GAAS AT HIGH DOPING CONCENTRATIONS
Authors: NEWMAN RC ASHWIN MJ FAHY MR HART L HOLMES SN ROBERTS C ZHANG X WAGNER J
Citation: Rc. Newman et al., LATTICE LOCATIONS OF SILICON ATOMS IN DELTA-DOPED LAYERS IN GAAS AT HIGH DOPING CONCENTRATIONS, Physical review. B, Condensed matter, 54(12), 1996, pp. 8769-8781
SILICON INCORPORATION BEHAVIOR IN GAAS GROWN ON GAAS (111)A BY MOLECULAR-BEAM EPITAXY
Authors: SATO K FAHY MR ASHWIN MJ JOYCE BA
Citation: K. Sato et al., SILICON INCORPORATION BEHAVIOR IN GAAS GROWN ON GAAS (111)A BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 165(4), 1996, pp. 345-350
THE BONDING OF C-AS ACCEPTORS IN INXGA1-XAS GROWN BY CHEMICAL BEAM EPITAXY USING CARBON TETRABROMIDE AS THE SOURCE OF CARBON
Authors: ASHWIN MJ PRITCHARD RE NEWMAN RC JOYCE TB BULLOUGH TJ WAGNER J JEYNES C BREUER SJ JONES R BRIDDON PR OBERG S
Citation: Mj. Ashwin et al., THE BONDING OF C-AS ACCEPTORS IN INXGA1-XAS GROWN BY CHEMICAL BEAM EPITAXY USING CARBON TETRABROMIDE AS THE SOURCE OF CARBON, Journal of applied physics, 80(12), 1996, pp. 6754-6760
SI DELTA-DOPING IN GAAS - INVESTIGATION OF THE DEGREE OF CONFINEMENT AND THE EFFECTS OF POSTGROWTH ANNEALING
Authors: HART L ASHWIN MJ FEWSTER PF ZHANG X FAHY MR NEWMAN RC
Citation: L. Hart et al., SI DELTA-DOPING IN GAAS - INVESTIGATION OF THE DEGREE OF CONFINEMENT AND THE EFFECTS OF POSTGROWTH ANNEALING, Semiconductor science and technology, 10(1), 1995, pp. 32-40
NEAREST-NEIGHBOR ISOTOPIC FINE-STRUCTURE OF THE AS-P GAP MODE IN GAP
Authors: GROSCHE EG ASHWIN MJ NEWMAN RC ROBBIE DA SANGSTER MJL PLETL T PAVONE P STRAUCH D
Citation: Eg. Grosche et al., NEAREST-NEIGHBOR ISOTOPIC FINE-STRUCTURE OF THE AS-P GAP MODE IN GAP, Physical review. B, Condensed matter, 51(20), 1995, pp. 14758-14761
SIMS ANALYSIS OF AL DELTA-DOPED GAAS TEST STRUCTURES USING CHEMICAL BEVELLING AS A SAMPLE PREPARATION TECHNIQUE
Authors: HSU CM SHARMA VKM ASHWIN MJ MCPHAIL DS
Citation: Cm. Hsu et al., SIMS ANALYSIS OF AL DELTA-DOPED GAAS TEST STRUCTURES USING CHEMICAL BEVELLING AS A SAMPLE PREPARATION TECHNIQUE, Surface and interface analysis, 23(10), 1995, pp. 665-672
BISTABILITY OF SI-GA SI-GA PAIRS IN MBE(001) DELTA-DOPED GAAS
Authors: NEWMAN RC JONES R OBERG S BRIDDON PR ASHWIN MJ
Citation: Rc. Newman et al., BISTABILITY OF SI-GA SI-GA PAIRS IN MBE(001) DELTA-DOPED GAAS, Solid state communications, 93(5), 1995, pp. 468-468
MEASUREMENT OF INTERFACE ROUGHNESS IN A SUPERLATTICE OF DELTA-BARRIERS OF AL IN GAAS USING HIGH-RESOLUTION X-RAY-DIFFRACTOMETRY
Authors: HART L FEWSTER PF ASHWIN MJ FAHY MR NEWMAN RC
Citation: L. Hart et al., MEASUREMENT OF INTERFACE ROUGHNESS IN A SUPERLATTICE OF DELTA-BARRIERS OF AL IN GAAS USING HIGH-RESOLUTION X-RAY-DIFFRACTOMETRY, Journal of physics. D, Applied physics, 28(4A), 1995, pp. 154-158
HOST AND IMPURITY ISOTOPE EFFECTS ON LOCAL VIBRATIONAL-MODES OF GAASC(AS) AND GAASB(AS)
Authors: LEIGH RS NEWMAN RC SANGSTER MJL DAVIDSON BR ASHWIN MJ ROBBIE DA
Citation: Rs. Leigh et al., HOST AND IMPURITY ISOTOPE EFFECTS ON LOCAL VIBRATIONAL-MODES OF GAASC(AS) AND GAASB(AS), Semiconductor science and technology, 9(5), 1994, pp. 1054-1061
A LOCAL VIBRATIONAL-MODE INVESTIGATION OF P-TYPE SI-DOPED GAAS
Authors: ASHWIN MJ FAHY MR NEWMAN RC WAGNER J ROBBIE DA SANGSTER MJL SILIER I BAUSER E BRAUN W PLOOG K
Citation: Mj. Ashwin et al., A LOCAL VIBRATIONAL-MODE INVESTIGATION OF P-TYPE SI-DOPED GAAS, Journal of applied physics, 76(12), 1994, pp. 7839-7849
THE TRANSITION FROM DILUTE ALUMINUM DELTA-STRUCTURES TO AN ALAS MONOLAYER IN GAAS AND A COMPARISON WITH SI DELTA-DOPING
Authors: ASHWIN MJ FAHY MR HART L NEWMAN RC WAGNER J
Citation: Mj. Ashwin et al., THE TRANSITION FROM DILUTE ALUMINUM DELTA-STRUCTURES TO AN ALAS MONOLAYER IN GAAS AND A COMPARISON WITH SI DELTA-DOPING, Journal of applied physics, 76(11), 1994, pp. 7627-7629
CARBON ACCEPTORS PASSIVATED WITH HYDROGEN AND THE SEARCH FOR CARBON DONORS IN HIGHLY DOPED GAAS C
Authors: ASHWIN MJ DAVIDSON BR WOODHOUSE K NEWMAN RC BULLOUGH TJ JOYCE TB NICKLIN R BRADLEY RR
Citation: Mj. Ashwin et al., CARBON ACCEPTORS PASSIVATED WITH HYDROGEN AND THE SEARCH FOR CARBON DONORS IN HIGHLY DOPED GAAS C, Semiconductor science and technology, 8(5), 1993, pp. 625-629
INCORPORATION OF SILICON DURING MBE GROWTH OF GAAS ON (111)A SUBSTRATES
Authors: FAHY MR NEAVE JH ASHWIN MJ MURRAY R NEWMAN RC JOYCE BA KADOYA Y SAKAKI H
Citation: Mr. Fahy et al., INCORPORATION OF SILICON DURING MBE GROWTH OF GAAS ON (111)A SUBSTRATES, Journal of crystal growth, 127(1-4), 1993, pp. 871-876
Risultati: 1-21 |