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Results: 1-12 |
Results: 12
MONODISPERSE AEROSOL-PARTICLE DEPOSITION - PROSPECTS FOR NANOELECTRONICS
Authors: PROST W KRUIS FE OTTEN F NIELSCH K RELLINGHAUS B AUER U PELED A WASSERMANN EF FISSAN H TEGUDE FJ
Citation: W. Prost et al., MONODISPERSE AEROSOL-PARTICLE DEPOSITION - PROSPECTS FOR NANOELECTRONICS, Microelectronic engineering, 42, 1998, pp. 535-538
FAST FABRICATION OF INP-BASED HBT USING A NOVEL COPLANAR DESIGN
Authors: AUER U KIM SO AGETHEN M VELLING P PROST W TEGUDE FJ
Citation: U. Auer et al., FAST FABRICATION OF INP-BASED HBT USING A NOVEL COPLANAR DESIGN, Electronics Letters, 34(19), 1998, pp. 1885-1886
MODELING INTERMIXING OF SHORT-PERIOD STRAINED-LAYER SUPERLATTICES BY MEANS OF X-RAY-DIFFRACTION ANALYSIS
Authors: BRENNEMANN A PROST W LIU Q AUER U TEGUDE FJ
Citation: A. Brennemann et al., MODELING INTERMIXING OF SHORT-PERIOD STRAINED-LAYER SUPERLATTICES BY MEANS OF X-RAY-DIFFRACTION ANALYSIS, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 87-90
MODELING IMPERFECTIONS OF EPITAXIAL HETEROSTRUCTURES BY MEANS OF X-RAY-DIFFRACTION ANALYSIS
Authors: LIU Q PROST W BRENNEMANN A AUER U TEGUDE FJ
Citation: Q. Liu et al., MODELING IMPERFECTIONS OF EPITAXIAL HETEROSTRUCTURES BY MEANS OF X-RAY-DIFFRACTION ANALYSIS, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 19(2-4), 1997, pp. 299-304
INVESTIGATION AND MODELING OF IMPACT IONIZATION WITH REGARD TO THE RFAND NOISE BEHAVIOR OF HFET
Authors: REUTER R AGETHEN M AUER U VANWAASEN S PETERS D BROCKERHOFF W TEGUDE FJ
Citation: R. Reuter et al., INVESTIGATION AND MODELING OF IMPACT IONIZATION WITH REGARD TO THE RFAND NOISE BEHAVIOR OF HFET, IEEE transactions on microwave theory and techniques, 45(6), 1997, pp. 977-983
27-GHZ BANDWIDTH HIGH-SPEED MONOLITHIC INTEGRATED OPTOELECTRONIC PHOTORECEIVER CONSISTING OF A WAVE-GUIDE FED PHOTODIODE AND AN INALAS INGAAS-HFET TRAVELING-WAVE AMPLIFIER/
Authors: VANWAASEN S UMBACH A AUER U BACH HG BERTENBURG RM JANSSEN G MEKONNEN GG PASSENBERG W REUTER R SCHLAAK W SCHRAMM C UNTERBORSCH G WOLFRAM P TEGUDE FJ
Citation: S. Vanwaasen et al., 27-GHZ BANDWIDTH HIGH-SPEED MONOLITHIC INTEGRATED OPTOELECTRONIC PHOTORECEIVER CONSISTING OF A WAVE-GUIDE FED PHOTODIODE AND AN INALAS INGAAS-HFET TRAVELING-WAVE AMPLIFIER/, IEEE journal of solid-state circuits, 32(9), 1997, pp. 1394-1401
A NOVEL 3-D INTEGRATED HFET RTD FREQUENCY-MULTIPLIER/
Authors: AUER U PROST W JANSSEN G AGETHEN M REUTER R TEGUDE FJ
Citation: U. Auer et al., A NOVEL 3-D INTEGRATED HFET RTD FREQUENCY-MULTIPLIER/, IEEE journal of selected topics in quantum electronics, 2(3), 1996, pp. 650-654
THE IMPACT OF PSEUDOMORPHIC AIA SPACER LAYERS ON THE GATE LEAKAGE CURRENT OF INALAS INGAAS HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS/
Authors: AUER U REUTER R ELLRODT P HEEDT C PROST W TEGUDE FJ
Citation: U. Auer et al., THE IMPACT OF PSEUDOMORPHIC AIA SPACER LAYERS ON THE GATE LEAKAGE CURRENT OF INALAS INGAAS HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS/, Microwave and optical technology letters, 11(3), 1996, pp. 125-128
INALAS INGAAS/INP HFET WITH SUPPRESSED IMPACT IONIZATION USING DUAL-GATE CASCODE-DEVICES/
Authors: DAUMANN W ELLRODT P BROCKERHOFF W BERTENBURG R REUTER R AUER U MOLLS W TEGUDE FJ
Citation: W. Daumann et al., INALAS INGAAS/INP HFET WITH SUPPRESSED IMPACT IONIZATION USING DUAL-GATE CASCODE-DEVICES/, IEEE electron device letters, 17(10), 1996, pp. 488-490
MONOLITHIC PIN-HEMT 1.55-MU-M PHOTORECEIVER ON INP WITH 27 GHZ BANDWIDTH
Authors: UMBACH A VANWAASEN S AUER U BACH HG BERTENBURG RM BREUER V EBERT W JANSSEN G MEKONNEN GG PASSENBERG W SCHLAAK W SCHRAMM C SEEGER A TEGUDE FJ UNTERBORSCH G
Citation: A. Umbach et al., MONOLITHIC PIN-HEMT 1.55-MU-M PHOTORECEIVER ON INP WITH 27 GHZ BANDWIDTH, Electronics Letters, 32(23), 1996, pp. 2142-2143
INP-BASED HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS WITH HIGH-QUALITY SHORT-PERIOD (INAS)(3M) (GAAS)(1M) SUPERLATTICE CHANNEL LAYERS/
Authors: AUER U REUTER R HEEDT C PROST W TEGUDE FJ
Citation: U. Auer et al., INP-BASED HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS WITH HIGH-QUALITY SHORT-PERIOD (INAS)(3M) (GAAS)(1M) SUPERLATTICE CHANNEL LAYERS/, Journal of crystal growth, 150(1-4), 1995, pp. 1225-1229
ELECTROOPTIC PROBING OF RF SIGNALS IN SUBMICROMETER MMIC DEVICES
Authors: DAVID G BUSSEK P AUER U TEGUDE FJ JAGER D
Citation: G. David et al., ELECTROOPTIC PROBING OF RF SIGNALS IN SUBMICROMETER MMIC DEVICES, Electronics Letters, 31(25), 1995, pp. 2188-2189
Risultati: 1-12 |