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Results: 1-9 |
Results: 9
HOLE-BURNING SPECTROSCOPY OF POROUS SILICON
Authors: KOVALEV D HECKLER H AVERBOUKH B BENCHORIN M SCHWARTZKOPFF M KOCH F
Citation: D. Kovalev et al., HOLE-BURNING SPECTROSCOPY OF POROUS SILICON, Physical review. B, Condensed matter, 57(7), 1998, pp. 3741-3744
SHALLOW DONORS IN EPITAXIAL GAN
Authors: FISCHER S VOLM D KOVALEV D AVERBOUKH B GRABER A ALT HC MEYER BK
Citation: S. Fischer et al., SHALLOW DONORS IN EPITAXIAL GAN, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 192-195
NONLINEAR-OPTICAL EFFECTS IN POROUS SILICON - PHOTOLUMINESCENCE SATURATION AND OPTICALLY INDUCED POLARIZATION ANISOTROPY
Authors: EFROS AL ROSEN M AVERBOUKH B KOVALEV D BENCHORIN M KOCH F
Citation: Al. Efros et al., NONLINEAR-OPTICAL EFFECTS IN POROUS SILICON - PHOTOLUMINESCENCE SATURATION AND OPTICALLY INDUCED POLARIZATION ANISOTROPY, Physical review. B, Condensed matter, 56(7), 1997, pp. 3875-3884
SYMMETRY OF THE ELECTRONIC STATES OF SI NANOCRYSTALS - AN EXPERIMENTAL-STUDY
Authors: KOVALEV D BENCHORIN M DIENER J AVERBOUKH B POLISSKI G KOCH F
Citation: D. Kovalev et al., SYMMETRY OF THE ELECTRONIC STATES OF SI NANOCRYSTALS - AN EXPERIMENTAL-STUDY, Physical review letters, 79(1), 1997, pp. 119-122
CONTROL OF SILICON NANOCRYSTALLITE SHAPE ASYMMETRY AND ORIENTATION ANISOTROPY BY LIGHT-ASSISTED ANODIZATION
Authors: POLISSKI G AVERBOUKH B KOVALEV D KOCH F
Citation: G. Polisski et al., CONTROL OF SILICON NANOCRYSTALLITE SHAPE ASYMMETRY AND ORIENTATION ANISOTROPY BY LIGHT-ASSISTED ANODIZATION, Applied physics letters, 70(9), 1997, pp. 1116-1118
FREE-EXCITON EMISSION IN GAN
Authors: KOVALEV D AVERBOUKH B VOLM D MEYER BK AMANO H AKASAKI I
Citation: D. Kovalev et al., FREE-EXCITON EMISSION IN GAN, Physical review. B, Condensed matter, 54(4), 1996, pp. 2518-2522
INFLUENCE OF QUANTUM CONFINEMENT ON THE CRITICAL-POINTS OF THE BAND-STRUCTURE OF SI
Authors: BENCHORIN M AVERBOUKH B KOVALEV D POLISSKI G KOCH F
Citation: M. Benchorin et al., INFLUENCE OF QUANTUM CONFINEMENT ON THE CRITICAL-POINTS OF THE BAND-STRUCTURE OF SI, Physical review letters, 77(4), 1996, pp. 763-766
OPTICALLY INDUCED POLARIZATION ANISOTROPY IN POROUS SI
Authors: KOVALEV D AVERBOUKH B BENCHORIN M KOCH F EFROS AL ROSEN M
Citation: D. Kovalev et al., OPTICALLY INDUCED POLARIZATION ANISOTROPY IN POROUS SI, Physical review letters, 77(10), 1996, pp. 2089-2092
POLARIZATION PHENOMENA IN THE OPTICAL-PROPERTIES OF POROUS SILICON
Authors: KOCH F KOVALEV D AVERBOUKH B POLISSKI G BENCHORIN M
Citation: F. Koch et al., POLARIZATION PHENOMENA IN THE OPTICAL-PROPERTIES OF POROUS SILICON, Journal of luminescence, 70, 1996, pp. 320-332
Risultati: 1-9 |