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Results: 1-19 |
Results: 19
Self-assembled GaN quantum dots grown by plasma-assisted molecular beam epitaxy
Authors: Daudin, B Feuillet, G Mariette, H Mula, G Pelekanos, N Molva, E Rouviere, JL Adelmann, C Martinez-Guerrero, E Barjon, J Chabuel, F Bataillou, B Simon, J
Citation: B. Daudin et al., Self-assembled GaN quantum dots grown by plasma-assisted molecular beam epitaxy, JPN J A P 1, 40(3B), 2001, pp. 1892-1895
Growth and characterisation of self-assembled cubic GaN quantum dots
Authors: Adelmann, C Guerrero, EM Chabuel, F Simon, J Bataillou, B Mula, G Dang, LS Pelekanos, NT Daudin, B Feuillet, G Mariette, H
Citation: C. Adelmann et al., Growth and characterisation of self-assembled cubic GaN quantum dots, MAT SCI E B, 82(1-3), 2001, pp. 212-214
Time-resolved photoluminescence studies of cubic and hexagonal GaN quantumdots
Authors: Simon, J Martinez-Guerrero, E Adelmann, C Mula, G Daudin, B Feuillet, G Mariette, H Pelekanos, NT
Citation: J. Simon et al., Time-resolved photoluminescence studies of cubic and hexagonal GaN quantumdots, PHYS ST S-B, 224(1), 2001, pp. 13-16
Surfactant effect of gallium during molecular-beam epitaxy of GaN on AlN (0001) - art. no. 195406
Authors: Mula, G Adelmann, C Moehl, S Oullier, J Daudin, B
Citation: G. Mula et al., Surfactant effect of gallium during molecular-beam epitaxy of GaN on AlN (0001) - art. no. 195406, PHYS REV B, 6419(19), 2001, pp. 5406
Strain relaxation in (0001) AlN/GaN heterostructures - art. no. 245307
Authors: Bourret, A Adelmann, C Daudin, B Rouviere, JL Feuillet, G Mula, G
Citation: A. Bourret et al., Strain relaxation in (0001) AlN/GaN heterostructures - art. no. 245307, PHYS REV B, 6324(24), 2001, pp. 5307
Structure and ordering of GaN quantum dot multilayers
Authors: Chamard, V Metzger, TH Bellet-Amalric, E Daudin, B Adelmann, C Mariette, H Mula, G
Citation: V. Chamard et al., Structure and ordering of GaN quantum dot multilayers, APPL PHYS L, 79(13), 2001, pp. 1971-1973
Incorporation kinetics of indium in indium gallium nitride at low temperature
Authors: Storm, DF Adelmann, C Daudin, B
Citation: Df. Storm et al., Incorporation kinetics of indium in indium gallium nitride at low temperature, APPL PHYS L, 79(11), 2001, pp. 1614-1615
Structural and optical properties of self-assembled GaN/AlN quantum dots
Authors: Adelmann, C Arlery, M Daudin, B Feuillet, G Fishman, G Dang, LS Mariette, H Pelekanos, N Rouviere, JL Simon, J Widmann, F
Citation: C. Adelmann et al., Structural and optical properties of self-assembled GaN/AlN quantum dots, CR AC S IV, 1(1), 2000, pp. 61-69
MBE growth of GaN films in presence of surfactants: The effect of Mg and Si
Authors: Mula, G Daudin, B Adelmann, C Peyla, P
Citation: G. Mula et al., MBE growth of GaN films in presence of surfactants: The effect of Mg and Si, MRS I J N S, 5, 2000, pp. NIL_179-NIL_184
Molecular beam epitaxy of GaN, AlN, InN and related alloys: from two- to three-dimensional growth mode
Authors: Daudin, B Feuillet, G Mula, G Mariette, H Rouviere, JL Pelekanos, N Fishman, G Adelmann, C Simon, J
Citation: B. Daudin et al., Molecular beam epitaxy of GaN, AlN, InN and related alloys: from two- to three-dimensional growth mode, DIAM RELAT, 9(3-6), 2000, pp. 506-511
Self-assembled zinc blende GaN quantum dots grown by molecular-beam epitaxy
Authors: Martinez-Guerrero, E Adelmann, C Chabuel, F Simon, J Pelekanos, NT Mula, G Daudin, B Feuillet, G Mariette, H
Citation: E. Martinez-guerrero et al., Self-assembled zinc blende GaN quantum dots grown by molecular-beam epitaxy, APPL PHYS L, 77(6), 2000, pp. 809-811
Signature of GaN-AlN quantum dots by nonresonant Raman scattering
Authors: Gleize, J Frandon, J Demangeot, F Renucci, MA Adelmann, C Daudin, B Feuillet, G Damilano, B Grandjean, N Massies, J
Citation: J. Gleize et al., Signature of GaN-AlN quantum dots by nonresonant Raman scattering, APPL PHYS L, 77(14), 2000, pp. 2174-2176
Self-assembled InGaN quantum dots grown by molecular-beam epitaxy
Authors: Adelmann, C Simon, J Feuillet, G Pelekanos, NT Daudin, B Fishman, G
Citation: C. Adelmann et al., Self-assembled InGaN quantum dots grown by molecular-beam epitaxy, APPL PHYS L, 76(12), 2000, pp. 1570-1572
Epitaxial growth of GaN, AlN and InN: 2D/3D transition and surfactant effects
Authors: Daudin, B Feuillet, G Mula, G Mariette, H Rouviere, JL Pelekanos, N Fishman, G Adelmann, C Simon, J
Citation: B. Daudin et al., Epitaxial growth of GaN, AlN and InN: 2D/3D transition and surfactant effects, PHYS ST S-A, 176(1), 1999, pp. 621-627
Growth and optical characterization of InGaN quantum dots resulting from a2D-3D transition
Authors: Adelmann, C Simon, J Pelekanos, NT Samson, Y Feuillet, G Daudin, B
Citation: C. Adelmann et al., Growth and optical characterization of InGaN quantum dots resulting from a2D-3D transition, PHYS ST S-A, 176(1), 1999, pp. 639-642
The depolarization near-field scanning optical microscope: comparison of experiment and theory
Authors: Von Freymann, G Adelmann, C Scheiber, G Schimmel, T Wegener, M
Citation: G. Von Freymann et al., The depolarization near-field scanning optical microscope: comparison of experiment and theory, J MICROSC O, 194, 1999, pp. 491-494
Indium-modified growth kinetics of cubic and hexagonal GaN in molecular beam epitaxy
Authors: Adelmann, C Langer, R Martinez-Guerrero, E Mariette, H Feuillet, G Daudin, B
Citation: C. Adelmann et al., Indium-modified growth kinetics of cubic and hexagonal GaN in molecular beam epitaxy, J APPL PHYS, 86(8), 1999, pp. 4322-4325
Indium incorporation during the growth of InGaN by molecular-beam epitaxy studied by reflection high-energy electron diffraction intensity oscillations
Authors: Adelmann, C Langer, R Feuillet, G Daudin, B
Citation: C. Adelmann et al., Indium incorporation during the growth of InGaN by molecular-beam epitaxy studied by reflection high-energy electron diffraction intensity oscillations, APPL PHYS L, 75(22), 1999, pp. 3518-3520
Experiments on the depolarization near-field scanning optical microscope
Authors: Adelmann, C Hetzler, J Scheiber, G Schimmel, T Wegener, M Weber, HB von Lohneysen, H
Citation: C. Adelmann et al., Experiments on the depolarization near-field scanning optical microscope, APPL PHYS L, 74(2), 1999, pp. 179-181
Risultati: 1-19 |