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Results: 1-25/42
Authors:
Aleksenskii, AE
Osipov, VY
Vul', AY
Ber, BY
Smirnov, AB
Melekhin, VG
Adriaenssens, GJ
Iakoubovskii, K
Citation: Ae. Aleksenskii et al., Optical properties of nanodiamond layers, PHYS SOL ST, 43(1), 2001, pp. 145-150
Authors:
Iakoubovskii, K
Adriaenssens, GJ
Citation: K. Iakoubovskii et Gj. Adriaenssens, Trapping of vacancies by defects in diamond, J PHYS-COND, 13(26), 2001, pp. 6015-6018
Authors:
Iakoubovskii, K
Adriaenssens, GJ
Vohra, YK
Citation: K. Iakoubovskii et al., Nitrogen incorporation in CVD diamond, DIAM RELAT, 10(3-7), 2001, pp. 485-489
Authors:
Iakoubovskii, K
Adriaenssens, GJ
Dogadkin, NN
Shiryaev, AA
Citation: K. Iakoubovskii et al., Optical characterization of some irradiation-induced centers in diamond, DIAM RELAT, 10(1), 2001, pp. 18-26
Authors:
Vantomme, A
Hogg, SM
Wu, MF
Pipeleers, B
Swart, M
Goodman, S
Auret, D
Iakoubovskii, K
Adriaenssens, GJ
Jacobs, K
Moerman, I
Citation: A. Vantomme et al., Suppression of rare-earth implantation-induced damage in GaN, NUCL INST B, 175, 2001, pp. 148-153
Authors:
Afanas'ev, VV
Adriaenssens, GJ
Stesmans, A
Citation: Vv. Afanas'Ev et al., Positive charging of thermal SiO2 layers: hole trapping versus proton trapping, MICROEL ENG, 59(1-4), 2001, pp. 85-88
Authors:
Afanas'ev, VV
Houssa, M
Stesmans, A
Adriaenssens, GJ
Heyns, MM
Citation: Vv. Afanas'Ev et al., Energy barriers between (100)Si and Al2O3 and ZrO2-based dielectric stacks: internal electron photoemission measurements, MICROEL ENG, 59(1-4), 2001, pp. 335-339
Authors:
Arkhipov, VI
Emelianova, EV
Adriaenssens, GJ
Citation: Vi. Arkhipov et al., Effective transport energy versus the energy of most probable jumps in disordered hopping systems - art. no. 125125, PHYS REV B, 6412(12), 2001, pp. 5125
Authors:
Arkhipov, VI
Emelianova, EV
Adriaenssens, GJ
Citation: Vi. Arkhipov et al., Coulomb effect on doping in amorphous semiconductors - art. no. 081202, PHYS REV B, 6308(8), 2001, pp. 1202
Authors:
Tsvetkova, T
Tzenov, N
Tzolov, M
Dimova-Malinovska, D
Adriaenssens, GJ
Pattyn, H
Citation: T. Tsvetkova et al., Optical properties and chemical structure of ion implanted a-SiC : H, VACUUM, 63(4), 2001, pp. 749-753
Authors:
Qamhieh, N
Adriaenssens, GJ
Citation: N. Qamhieh et Gj. Adriaenssens, Steady-state photoconductivity in amorphous germanium selenide films, J NON-CRYST, 292(1-3), 2001, pp. 80-87
Authors:
Kessels, WMM
Severens, RJ
Smets, AHM
Korevaar, BA
Adriaenssens, GJ
Schram, DC
van de Sanden, MCM
Citation: Wmm. Kessels et al., Hydrogenated amorphous silicon deposited at very high growth rates by an expanding Ar-H-2-SiH4 plasma, J APPL PHYS, 89(4), 2001, pp. 2404-2413
Authors:
Iakoubovskii, K
Adriaenssens, GJ
Citation: K. Iakoubovskii et Gj. Adriaenssens, Luminescence excitation spectra in diamond, PHYS REV B, 61(15), 2000, pp. 10174-10182
Authors:
Aleksenskii, AE
Osipov, VY
Dideikin, AT
Vul', AY
Adriaenssens, GJ
Afanas'ev, VV
Citation: Ae. Aleksenskii et al., Ultradisperse diamond cluster aggregation studied by atomic force microscopy, TECH PHYS L, 26(9), 2000, pp. 819-821
Authors:
Arkhipov, VI
Emelianova, EV
Adriaenssens, GJ
Citation: Vi. Arkhipov et al., Variable-range hopping within a fluctuating potential landscape, J PHYS-COND, 12(9), 2000, pp. 2021-2029
Authors:
Iakoubovskii, K
Adriaenssens, GJ
Citation: K. Iakoubovskii et Gj. Adriaenssens, Optical transitions at the substitutional nitrogen centre in diamond, J PHYS-COND, 12(6), 2000, pp. L77-L81
Authors:
Iakoubovskii, K
Adriaenssens, GJ
Vohra, YK
Citation: K. Iakoubovskii et al., Nitrogen incorporation in diamond films homoepitaxially grown by chemical vapour deposition, J PHYS-COND, 12(30), 2000, pp. L519-L524
Authors:
Iakoubovskii, K
Adriaenssens, GJ
Nesladek, M
Citation: K. Iakoubovskii et al., Photochromism of vacancy-related centres in diamond, J PHYS-COND, 12(2), 2000, pp. 189-199
Authors:
Iakoubovskii, K
Adriaenssens, GJ
Citation: K. Iakoubovskii et Gj. Adriaenssens, Characterization of platelet-related infrared luminescence in diamond, PHIL MAG L, 80(6), 2000, pp. 441-444
Authors:
Iakoubovskii, K
Adriaenssens, GJ
Citation: K. Iakoubovskii et Gj. Adriaenssens, Optical detection of defect centers in CVD diamond, DIAM RELAT, 9(7), 2000, pp. 1349-1356
Authors:
Iakoubovskii, K
Baidakova, MV
Wouters, BH
Stesmans, A
Adriaenssens, GJ
Vul', AY
Grobet, PJ
Citation: K. Iakoubovskii et al., Structure and defects of detonation synthesis nanodiamond, DIAM RELAT, 9(3-6), 2000, pp. 861-865
Authors:
Iakoubovskii, K
Adriaenssens, GJ
Citation: K. Iakoubovskii et Gj. Adriaenssens, Characterization of the broad green band luminescence in CVD and syntheticIb diamond, DIAM RELAT, 9(3-6), 2000, pp. 1017-1020
Authors:
Iakoubovskii, K
Stesmans, A
Nouwen, B
Adriaenssens, GJ
Citation: K. Iakoubovskii et al., ESR and optical evidence for a Ni vacancy center in CVD diamond, PHYS REV B, 62(24), 2000, pp. 16587-16594
Authors:
Cerqueira, MF
Ferreira, JA
Adriaenssens, GJ
Citation: Mf. Cerqueira et al., Structural studies and influence of the structure on the electrical and optical properties of microcrystalline silicon thin films produced by RF sputtering, THIN SOL FI, 370(1-2), 2000, pp. 128-136
Authors:
Arkhipov, VI
Emelianova, EV
Adriaenssens, GJ
Citation: Vi. Arkhipov et al., Onsager approach to the universal cross-over in variable-range hopping with Coulomb interactions, SOL ST COMM, 115(3), 2000, pp. 131-136