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Results: 1-25 | 26-30
Results: 1-25/30
DX-like behavior of oxygen in GaN
Authors: Wetzel, C Amano, T Akasaki, I Ager, JW Grzegory, I Meyer, BK
Citation: C. Wetzel et al., DX-like behavior of oxygen in GaN, PHYSICA B, 302, 2001, pp. 23-38
Band anticrossing in III-N-V alloys
Authors: Shan, W Walukiewicz, W Yu, KM Ager, JW Haller, EE Geisz, JF Friedman, DJ Olson, JM Kurtz, SR Xin, HP Tu, CW
Citation: W. Shan et al., Band anticrossing in III-N-V alloys, PHYS ST S-B, 223(1), 2001, pp. 75-85
Effect of band anticrossing on the optical transitions in GaAs1-xNx/GaAs multiple quantum wells - art. no. 085320
Authors: Wu, J Shan, W Walukiewicz, W Yu, KM Ager, JW Haller, EE Xin, HP Tu, CW
Citation: J. Wu et al., Effect of band anticrossing on the optical transitions in GaAs1-xNx/GaAs multiple quantum wells - art. no. 085320, PHYS REV B, 6408(8), 2001, pp. 5320
Evolution of crystallinity of GaN layers grown at low temperature on sapphire with dimethylhydrazine and triethylgallium
Authors: Bourret-Courchesne, ED Ye, Q Yu, KM Ager, JW
Citation: Ed. Bourret-courchesne et al., Evolution of crystallinity of GaN layers grown at low temperature on sapphire with dimethylhydrazine and triethylgallium, J CRYST GR, 231(1-2), 2001, pp. 89-94
Formation of diluted III-V nitride thin films by N ion implantation
Authors: Yu, KM Walukiewicz, W Wu, J Beeman, JW Ager, JW Haller, EE Shan, W Xin, HP Tu, CW Ridgway, MC
Citation: Km. Yu et al., Formation of diluted III-V nitride thin films by N ion implantation, J APPL PHYS, 90(5), 2001, pp. 2227-2234
Synthesis of InNxP1-x thin films by N ion implantation
Authors: Yu, KM Walukiewicz, W Wu, J Beeman, JW Ager, JW Haller, EE Shan, W Xin, HP Tu, CW
Citation: Km. Yu et al., Synthesis of InNxP1-x thin films by N ion implantation, APPL PHYS L, 78(8), 2001, pp. 1077-1079
Localized vibrational modes in GaN : O tracing the formation of oxygen DX-like centers under hydrostatic pressure
Authors: Wetzel, C Amano, H Akasaki, I Ager, JW Grzegory, I Topf, M Meyer, BK
Citation: C. Wetzel et al., Localized vibrational modes in GaN : O tracing the formation of oxygen DX-like centers under hydrostatic pressure, PHYS REV B, 61(12), 2000, pp. 8202-8206
Microstructure and electron emission properties of films prepared from single-wall and multi-wall nanotubes containing powders
Authors: Monteiro, OR Mammana, VP Salvadori, MC Ager, JW Dimitrijevic, S
Citation: Or. Monteiro et al., Microstructure and electron emission properties of films prepared from single-wall and multi-wall nanotubes containing powders, APPL PHYS A, 71(2), 2000, pp. 121-124
Effect of nitrogen on the electronic band structure of group III-N-V alloys
Authors: Shan, W Walukiewicz, W Yu, KM Ager, JW Haller, EE Geisz, JF Friedman, DJ Olson, JM Kurtz, SR Nauka, C
Citation: W. Shan et al., Effect of nitrogen on the electronic band structure of group III-N-V alloys, PHYS REV B, 62(7), 2000, pp. 4211-4214
Nitrogen-induced increase of the maximum electron concentration in group III-N-V alloys
Authors: Yu, KM Walukiewicz, W Shan, W Ager, JW Wu, J Haller, EE Geisz, JF Friedman, DJ Olson, JM
Citation: Km. Yu et al., Nitrogen-induced increase of the maximum electron concentration in group III-N-V alloys, PHYS REV B, 61(20), 2000, pp. R13337-R13340
Age-related changes in initiation and maintenance of sleep: A meta-analysis
Authors: Floyd, JA Medler, SM Ager, JW Janisse, JJ
Citation: Ja. Floyd et al., Age-related changes in initiation and maintenance of sleep: A meta-analysis, RES NURS H, 23(2), 2000, pp. 106-117
Interaction of localized electronic states with the conduction band: Band anticrossing in II-VI semiconductor ternaries
Authors: Walukiewicz, W Shan, W Yu, KM Ager, JW Haller, EE Miotkowski, I Seong, MJ Alawadhi, H Ramdas, AK
Citation: W. Walukiewicz et al., Interaction of localized electronic states with the conduction band: Band anticrossing in II-VI semiconductor ternaries, PHYS REV L, 85(7), 2000, pp. 1552-1555
Nonlinear components of age-related change in sleep initiation
Authors: Floyd, JA Janisse, JJ Medler, SM Ager, JW
Citation: Ja. Floyd et al., Nonlinear components of age-related change in sleep initiation, NURS RES, 49(5), 2000, pp. 290-294
Annealing of nonhydrogenated amorphous carbon films prepared by filtered cathodic arc deposition
Authors: Monteiro, OR Ager, JW Lee, DH Yu Lo, R Walter, KC Nastasi, M
Citation: Or. Monteiro et al., Annealing of nonhydrogenated amorphous carbon films prepared by filtered cathodic arc deposition, J APPL PHYS, 88(5), 2000, pp. 2395-2399
Effect of Si doping on strain, cracking, and microstructure in GaN thin films grown by metalorganic chemical vapor deposition
Authors: Romano, LT Van de Walle, CG Ager, JW Gotz, W Kern, RS
Citation: Lt. Romano et al., Effect of Si doping on strain, cracking, and microstructure in GaN thin films grown by metalorganic chemical vapor deposition, J APPL PHYS, 87(11), 2000, pp. 7745-7752
Increased electrical activation in the near-surface region of sulfur and nitrogen coimplanted GaAs
Authors: Yu, KM Walukiewicz, W Shan, W Wu, J Beeman, JW Ager, JW Haller, EE
Citation: Km. Yu et al., Increased electrical activation in the near-surface region of sulfur and nitrogen coimplanted GaAs, APPL PHYS L, 77(22), 2000, pp. 3607-3609
Nitrogen-induced enhancement of the free electron concentration in sulfur implanted GaNxAs1-x
Authors: Yu, KM Walukiewicz, W Shan, W Wu, J Ager, JW Haller, EE Geisz, JF Ridgway, MC
Citation: Km. Yu et al., Nitrogen-induced enhancement of the free electron concentration in sulfur implanted GaNxAs1-x, APPL PHYS L, 77(18), 2000, pp. 2858-2860
Nature of the fundamental band gap in GaNxP1-x alloys
Authors: Shan, W Walukiewicz, W Yu, KM Wu, J Ager, JW Haller, EE Xin, HP Tu, CW
Citation: W. Shan et al., Nature of the fundamental band gap in GaNxP1-x alloys, APPL PHYS L, 76(22), 2000, pp. 3251-3253
Large, nitrogen-induced increase of the electron effective mass in InyGa1-yNxAs1-x
Authors: Skierbiszewski, C Perlin, P Wisniewski, P Knap, W Suski, T Walukiewicz, W Shan, W Yu, KM Ager, JW Haller, EE Geisz, JF Olson, JM
Citation: C. Skierbiszewski et al., Large, nitrogen-induced increase of the electron effective mass in InyGa1-yNxAs1-x, APPL PHYS L, 76(17), 2000, pp. 2409-2411
Ion implantation post-processing of amorphous carbon films
Authors: Ager, JW Anders, S Anders, A Wei, B Yao, XY Brown, IG Bhatia, CS Komvopoulos, K
Citation: Jw. Ager et al., Ion implantation post-processing of amorphous carbon films, DIAM RELAT, 8(2-5), 1999, pp. 451-456
Effect of Si doping on the strain and defect structure of GaN thin films
Authors: Romano, LT Van de Walle, CG Krusor, BS Lau, R Ho, J Schmidt, T Ager, JW Gotz, W Kern, RS
Citation: Lt. Romano et al., Effect of Si doping on the strain and defect structure of GaN thin films, PHYSICA B, 274, 1999, pp. 50-53
Correlation of vibrational modes and DX-like centers in GaN : O
Authors: Wetzel, C Ager, JW Topf, M Meyer, BK Amano, H Akasaki, I
Citation: C. Wetzel et al., Correlation of vibrational modes and DX-like centers in GaN : O, PHYSICA B, 274, 1999, pp. 109-112
Effect of nitrogen-induced modification of the conduction band structure on electron transport in GaAsN alloys
Authors: Skierbiszewski, C Perlin, P Wisniewski, P Suski, T Walukiewicz, W Shan, W Ager, JW Haller, EE Geisz, JF Friedman, DJ Olson, JM Kurtz, SR
Citation: C. Skierbiszewski et al., Effect of nitrogen-induced modification of the conduction band structure on electron transport in GaAsN alloys, PHYS ST S-B, 216(1), 1999, pp. 135-139
Transverse effective charge and its pressure dependence in GaN single crystals
Authors: Perlin, P Suski, T Ager, JW Conti, G Polian, A Christensen, NE Gorczyca, I Grzegory, I Weber, ER Haller, EE
Citation: P. Perlin et al., Transverse effective charge and its pressure dependence in GaN single crystals, PHYS REV B, 60(3), 1999, pp. 1480-1483
Band anticrossing in GaInNAs alloys
Authors: Shan, W Walukiewicz, W Ager, JW Haller, EE Geisz, JF Friedman, DJ Olson, JM Kurtz, SR
Citation: W. Shan et al., Band anticrossing in GaInNAs alloys, PHYS REV L, 82(6), 1999, pp. 1221-1224
Risultati: 1-25 | 26-30