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Results: 1-6 |
Results: 6

Authors: Auer, U Prost, W Agethen, M Tegude, FJ Duschl, R Eberl, K
Citation: U. Auer et al., Low-voltage MOBILE logic module based on Si/SiGe interband tunnelling diodes, IEEE ELEC D, 22(5), 2001, pp. 215-217

Authors: Keiper, D Velling, P Prost, W Agethen, M Tegude, FJ Landgren, G
Citation: D. Keiper et al., Metalorganic vapour phase epitaxy growth of InP-based heterojunction bipolar transistors with carbon doped InGaAs base using tertiarybutylarsine and tertiarybutylphosphine in N-2 ambient, JPN J A P 1, 39(11), 2000, pp. 6162-6165

Authors: Velling, P Agethen, M Prost, W Tegude, FJ
Citation: P. Velling et al., InAlAs/InGaAs/InP heterostructures for RTD and HBT device applications grown by LP-MOVPE using non-gaseous sources, J CRYST GR, 221, 2000, pp. 722-729

Authors: Agethen, M
Citation: M. Agethen, The Star of David under the Hammer and Sickle - The Jewish communities in the Soviet Zone of Occupation and the GDR and the treatment thereof by the SED and the East German state 1945-1990, HIST JAHRB, 120, 2000, pp. 528-529

Authors: Agethen, M
Citation: M. Agethen, Esoteric co-fraternities and middle-class society. The developing course of 18th-century secret-society practices into their present form, Z HIST FORS, 26(3), 1999, pp. 477-478

Authors: Velling, P Janssen, G Agethen, M Prost, W Tegude, FJ
Citation: P. Velling et al., InGaP/GaAs hole barrier asymmetry determined by (002) X-ray reflections and p-type DB-RTD hole transport, J CRYST GR, 195(1-4), 1998, pp. 117-123
Risultati: 1-6 |