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Results:
1-21
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Results: 21
Authors:
Gallart, M
Morel, A
Taliercio, T
Lefebvre, P
Gil, B
Allegre, J
Mathieu, H
Grandjean, N
Massies, J
Grzegory, I
Porowsky, S
Citation: M. Gallart et al., Time-resolved spectroscopy of MBE-grown GaN/AlGaN hetero- and homo-epitaxial quantum wells, MAT SCI E B, 82(1-3), 2001, pp. 140-142
Authors:
Taliercio, T
Lefebvre, P
Morel, A
Gallart, M
Allegre, J
Gil, B
Mathieu, H
Grandjean, N
Massies, J
Citation: T. Taliercio et al., Optical properties of self-assembled InGaN/GaN quantum dots, MAT SCI E B, 82(1-3), 2001, pp. 151-155
Authors:
Taliercio, T
Gallart, M
Lefebvre, P
Morel, A
Gil, B
Allegre, J
Grandjean, N
Massies, J
Grzegory, I
Porowski, S
Citation: T. Taliercio et al., Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN-GaAlNquantum wells grown by molecular beam epitaxy, SOL ST COMM, 117(7), 2001, pp. 445-448
Authors:
Gallart, M
Lefebvre, P
Morel, A
Taliercio, T
Gil, B
Allegre, J
Mathieu, H
Damilano, B
Grandjean, N
Massies, J
Citation: M. Gallart et al., Reduction of carrier in-plane mobility in group-III nitride based quantum wells: The role of internal electric fields, PHYS ST S-A, 183(1), 2001, pp. 61-66
Authors:
Lefebvre, P
Morel, A
Gallart, M
Taliercio, T
Allegre, J
Gil, B
Mathieu, H
Damilano, B
Grandjean, N
Massies, J
Citation: P. Lefebvre et al., High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy, APPL PHYS L, 78(9), 2001, pp. 1252-1254
Authors:
Lefebvre, P
Taliercio, T
Morel, A
Allegre, J
Gallart, M
Gil, B
Mathieu, H
Damilano, B
Grandjean, N
Massies, J
Citation: P. Lefebvre et al., Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes, APPL PHYS L, 78(11), 2001, pp. 1538-1540
Authors:
Taliercio, T
Lefebvre, P
Calvo, V
Magnea, N
Mathieu, H
Allegre, J
Citation: T. Taliercio et al., Excitons and trions confined on CdTe nano-islands: Optical tuning of the dielectric response, PHYS ST S-B, 220(2), 2000, pp. 875-884
Authors:
Kunert, HW
Malherbe, JB
Brink, DJ
Odendaal, RQ
Prinsloo, LC
Camassel, J
Allegre, J
Zeaiter, K
Llinares, C
Citation: Hw. Kunert et al., Optical properties of as grown and ion implanted (Ar+,N-2(+),alpha) GaAs nipi doping superlattices, APPL SURF S, 166(1-4), 2000, pp. 77-81
Authors:
Gallart, M
Morel, A
Taliercio, T
Lefebvre, P
Gil, B
Allegre, J
Mathieu, H
Grandjean, N
Leroux, M
Massies, J
Citation: M. Gallart et al., Scale effects on exciton localization and nonradiative processes in GaN/AlGaN quantum, PHYS ST S-A, 180(1), 2000, pp. 127-132
Authors:
Morel, A
Gallart, M
Taliercio, T
Lefebvre, P
Gil, B
Allegre, J
Mathieu, H
Damilano, B
Grandjean, N
Massies, J
Citation: A. Morel et al., Time-resolved spectroscopy of MBE-grown InGaN/GaN self-formed quantum dots, PHYS ST S-A, 180(1), 2000, pp. 375-380
Authors:
Gallart, M
Taliercio, T
Lefebvre, P
Gil, B
Allegre, J
Mathieu, H
Grandjean, N
Leroux, M
Massies, J
Bigenwald, P
Citation: M. Gallart et al., Time-resolved spectroscopy of MBE-grown nitride based heterostructures, PHYS ST S-A, 178(1), 2000, pp. 101-105
Authors:
Lefebvre, P
Allegre, J
Mathieu, H
Citation: P. Lefebvre et al., Recombination dynamics of excitons in III-nitride layers and quantum wells, MAT SCI E B, 59(1-3), 1999, pp. 307-314
Authors:
Lamrabte, A
Janot, JM
de Menorval, LC
Backov, R
Roziere, J
Sauvajol, JL
Allegre, J
Seta, P
Citation: A. Lamrabte et al., Photoluminescence properties of fullerene C-60 confined in microporous VPI-5 zeolite., SYNTH METAL, 103(1-3), 1999, pp. 2426-2427
Authors:
Camassel, J
Vicente, P
Planes, N
Allegre, J
Pankove, J
Namavar, F
Citation: J. Camassel et al., Experimental investigation of cubic to hexagonal ratio for GaN layers deposited on 3C-SiC/Si, PHYS ST S-B, 216(1), 1999, pp. 253-257
Authors:
Lefebvre, P
Gallart, M
Taliercio, T
Gil, B
Allegre, J
Mathieu, H
Grandjean, N
Leroux, M
Massies, J
Bigenwald, P
Citation: P. Lefebvre et al., Dynamics of excitons in GaN-AlGaN MQWs with varying depths, thicknesses and barrier widths, PHYS ST S-B, 216(1), 1999, pp. 361-364
Authors:
Gallart, M
Taliercio, T
Alemu, A
Lefebvre, P
Gil, B
Allegre, J
Mathieu, H
Nakamura, S
Citation: M. Gallart et al., CW and time-resolved optical spectroscopy of GaN epilayers and GaN-AlGaN quantum wells grown on A-plane sapphire, PHYS ST S-B, 216(1), 1999, pp. 365-369
Authors:
Lefebvre, P
Allegre, J
Gil, B
Mathieu, H
Grandjean, N
Leroux, M
Massies, J
Bigenwald, P
Citation: P. Lefebvre et al., Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl)N quantum wells, PHYS REV B, 59(23), 1999, pp. 15363-15367
Authors:
Gil, B
Lefebvre, P
Allegre, J
Mathieu, H
Grandjean, N
Leroux, M
Massies, J
Bigenwald, P
Christol, P
Citation: B. Gil et al., Observation of long-lived oblique excitons in GaN-AlGaN multiple quantum wells, PHYS REV B, 59(15), 1999, pp. 10246-10250
Authors:
Kunert, HW
Brink, DJ
Donnadieu, A
Zeaiter, K
Llinares, C
Allegre, J
Leveque, G
Camassel, J
Citation: Hw. Kunert et al., Electronic and structural properties of As-grown and alpha-particle irradiated GaAs doping superlattices, PHYS ST S-B, 210(2), 1998, pp. 699-705
Authors:
Taliercio, T
Lefebvre, P
Calvo, V
Scalbert, D
Magnea, N
Mathieu, H
Allegre, J
Citation: T. Taliercio et al., Charged excitons trapped on monomolecular CdTe islands in wide ZnTe-(Zn,Mg)Te quantum wells, PHYS REV B, 58(23), 1998, pp. 15408-15411
Authors:
Calvo, V
Magnea, N
Taliercio, T
Lefebvre, P
Allegre, J
Mathieu, H
Citation: V. Calvo et al., Optical properties versus growth conditions of CdTe submonolayers insertedin ZnTe quantum wells, PHYS REV B, 58(23), 1998, pp. 15736-15743
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