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Results: 1-25/54
Authors:
Martinez-Criado, G
Cros, A
Cantarero, A
Miskys, CR
Ambacher, O
Dimitrov, R
Stutzmann, M
Citation: G. Martinez-criado et al., Photoluminescence of Ga-face AlGaN/GaN single heterostructures, MAT SCI E B, 82(1-3), 2001, pp. 200-202
Authors:
Bayerl, MW
Brandt, MS
Graf, T
Ambacher, O
Majewski, JA
Stutzmann, M
As, DJ
Lischka, K
Citation: Mw. Bayerl et al., g values of effective mass donors in AlxGa1-xN alloys - art. no. 165204, PHYS REV B, 6316(16), 2001, pp. 5204
Authors:
Bayerl, MW
Brandt, MS
Ambacher, O
Stutzmann, M
Glaser, ER
Henry, RL
Wickenden, AE
Koleske, DD
Suski, T
Grzegory, I
Porowski, S
Citation: Mw. Bayerl et al., Optically detected magnetic resonance of the red and near-infrared luminescence in Mg-doped GaN - art. no. 125203, PHYS REV B, 6312(12), 2001, pp. 5203
Authors:
Schalwig, J
Muller, G
Ambacher, O
Stutzmann, M
Citation: J. Schalwig et al., Group-III-nitride based gas sensing devices, PHYS ST S-A, 185(1), 2001, pp. 39-45
Authors:
Neuberger, R
Muller, G
Ambacher, O
Stutzmann, M
Citation: R. Neuberger et al., High-electron-mobility AlGaN/GaN transistors (HEMTs) for fluid monitoring applications, PHYS ST S-A, 185(1), 2001, pp. 85-89
Authors:
Ambacher, O
Brandt, MS
Nebel, CE
Stutzmann, M
Citation: O. Ambacher et al., Papers presented at the 247. WE-Heraeus Seminar on New Materials for Multifunctional Sensor Applications Tutzing (Germany), December 13-15, 2000 - Preface, PHYS ST S-A, 185(1), 2001, pp. V-V
Authors:
Neuberger, R
Muller, G
Ambacher, O
Stutzmann, M
Citation: R. Neuberger et al., Ion-induced modulation of channel currents in AlGaN/GaN high-electron-mobility transistors, PHYS ST S-A, 183(2), 2001, pp. R10-R12
Authors:
Martinez-Criado, G
Cros, A
Cantarero, A
Ambacher, O
Miskys, CR
Dimitrov, R
Stutzmann, M
Smart, J
Shealy, JR
Citation: G. Martinez-criado et al., Residual strain effects on the two-dimensional electron gas concentration of AlGaN/GaN heterostructures, J APPL PHYS, 90(9), 2001, pp. 4735-4740
Authors:
Cremades, A
Navarro, V
Piqueras, J
Lima, AP
Ambacher, O
Stutzmann, M
Citation: A. Cremades et al., Inhomogeneous incorporation of In and Al in molecular beam epitaxial AlInGaN films, J APPL PHYS, 90(9), 2001, pp. 4868-4870
Authors:
Eickhoff, M
Ambacher, O
Krotz, G
Stutzmann, M
Citation: M. Eickhoff et al., Piezoresistivity of AlxGa1-xN layers and AlxGa1-xN/GaN heterostructures, J APPL PHYS, 90(7), 2001, pp. 3383-3386
Authors:
Martinez-Criado, G
Miskys, CR
Cros, A
Ambacher, O
Cantarero, A
Stutzmann, M
Citation: G. Martinez-criado et al., Photoluminescence study of excitons in homoepitaxial GaN, J APPL PHYS, 90(11), 2001, pp. 5627-5631
Authors:
Schuck, PJ
Mason, MD
Grober, RD
Ambacher, O
Lima, AP
Miskys, C
Dimitrov, R
Stutzmann, M
Citation: Pj. Schuck et al., Spatially resolved photoluminescence of inversion domain boundaries in GaN-based lateral polarity heterostructures, APPL PHYS L, 79(7), 2001, pp. 952-954
Authors:
Goennenwein, STB
Zeisel, R
Ambacher, O
Brandt, MS
Stutzmann, M
Baldovino, S
Citation: Stb. Goennenwein et al., Generation-recombination noise of DX centers in AlN : Si, APPL PHYS L, 79(15), 2001, pp. 2396-2398
Authors:
Grabowski, SP
Schneider, M
Nienhaus, H
Monch, W
Dimitrov, R
Ambacher, O
Stutzmann, M
Citation: Sp. Grabowski et al., Electron affinity of AlxGa1-xN(0001) surfaces, APPL PHYS L, 78(17), 2001, pp. 2503-2505
Authors:
Cremades, A
Gorgens, L
Ambacher, O
Stutzmann, M
Scholz, F
Citation: A. Cremades et al., Structural and optical properties of Si-doped GaN, PHYS REV B, 61(4), 2000, pp. 2812-2818
Authors:
Kaiser, S
Jakob, M
Zweck, J
Gebhardt, W
Ambacher, O
Dimitrov, R
Schremer, AT
Smart, JA
Shealy, JR
Citation: S. Kaiser et al., Structural properties of AlGaN/GaN heterostructures on Si(111) substrates suitable for high-electron mobility transistors, J VAC SCI B, 18(2), 2000, pp. 733-740
Authors:
Karrer, U
Dobner, A
Ambacher, O
Stutzmann, M
Citation: U. Karrer et al., AlGaN-based ultraviolet light detectors with integrated optical filters, J VAC SCI B, 18(2), 2000, pp. 757-760
Authors:
Ambacher, O
Citation: O. Ambacher, Polarization induced effects in AlGaN/GaN heterostructures, ACT PHY P A, 98(3), 2000, pp. 195-201
Authors:
Ridley, BK
Ambacher, O
Eastman, LF
Citation: Bk. Ridley et al., The polarization-induced electron gas in a heterostructure, SEMIC SCI T, 15(3), 2000, pp. 270-271
Authors:
Zeisel, R
Bayerl, MW
Goennenwein, STB
Dimitrov, R
Ambacher, O
Brandt, MS
Stutzmann, M
Citation: R. Zeisel et al., DX-behavior of Si in AlN, PHYS REV B, 61(24), 2000, pp. R16283-R16286
Authors:
Dimitrov, R
Tilak, V
Yeo, W
Green, B
Kim, H
Smart, J
Chumbes, E
Shealy, JR
Schaff, W
Eastman, LF
Miskys, C
Ambacher, O
Stutzmann, M
Citation: R. Dimitrov et al., Influence of oxygen and methane plasma on the electrical properties of undoped AlGaN/GaN heterostructures for high power transistors, SOL ST ELEC, 44(8), 2000, pp. 1361-1365
Authors:
Schaff, WJ
Wu, H
Praharaj, CJ
Murphy, M
Eustis, T
Foutz, B
Ambacher, O
Eastman, LF
Citation: Wj. Schaff et al., GaN/SiC heterojunction bipolar transistors, SOL ST ELEC, 44(2), 2000, pp. 259-264
Authors:
Lima, AP
Miskys, CR
Karrer, U
Ambacher, O
Wenzel, A
Rauschenbach, B
Stutzmann, M
Citation: Ap. Lima et al., Growth of quaternary AlInGaN/GaN heterostructures by plasma-induced molecular beam epitaxy, J CRYST GR, 220(4), 2000, pp. 341-344
Authors:
Kim, JW
Son, CS
Choi, IH
Park, YK
Kim, YT
Ambacher, O
Stutzmann, M
Citation: Jw. Kim et al., Structural properties of AlxGa1-xN grown on sapphire by molecular beam epitaxy, J CRYST GR, 208(1-4), 2000, pp. 37-41
Authors:
Bayerl, MW
Reinacher, NM
Angerer, H
Ambacher, O
Brandt, MS
Stutzmann, M
Citation: Mw. Bayerl et al., Magnetic resonance investigations of defects in (GaN)-N-14 and (GaN)-N-15, J APPL PHYS, 88(6), 2000, pp. 3249-3253