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Results:
1-17
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Results: 17
Authors:
Stergiou, VC
Raptis, YS
Anastassakis, E
Pelekanos, NT
Nahmani, A
Cibert, J
Citation: Vc. Stergiou et al., Raman study of elastically strained bulk and layered structures based on CdTe, PHYS ST S-B, 223(1), 2001, pp. 237-240
Authors:
Anastassakis, E
Citation: E. Anastassakis, A geometrical method for diagonalizing real, symmetric 3 x 3 matrices through Euler rotations, APPL MATH C, 117(2-3), 2001, pp. 193-201
Authors:
Anastassakis, E
Citation: E. Anastassakis, Spatial degeneracies of strain-split polar phonon frequencies, PHYS ST S-A, 184(1), 2001, pp. 11-17
Authors:
Anastassakis, E
Siakavellas, M
Citation: E. Anastassakis et M. Siakavellas, Elastic properties of textured diamond and silicon, J APPL PHYS, 90(1), 2001, pp. 144-152
Authors:
Stergiou, VC
Sarantopoulou, E
Raptis, YS
Anastassakis, E
Pelekanos, NT
Arnoult, A
Tatarenko, S
Saminadayar, K
Citation: Vc. Stergiou et al., Phonon deformation potentials of CdTe, HIGH PR RES, 18(1-6), 2000, pp. 101-107
Authors:
Stergiou, VC
Raptis, YS
Popovic, ZV
Anastassakis, E
Citation: Vc. Stergiou et al., High-pressure Raman study of SnGeS3, HIGH PR RES, 18(1-6), 2000, pp. 189-194
Authors:
Wen, TD
Xu, LP
Anastassakis, E
Citation: Td. Wen et al., On the piezoelectric signals of multilayer systems, PHYS ST S-A, 177(2), 2000, pp. 467-475
Authors:
Goustouridis, D
Tsoukalas, D
Normand, P
Kontos, AG
Raptis, Y
Anastassakis, E
Citation: D. Goustouridis et al., Parameters influencing the flatness and stability of capacitive pressure sensors fabricated with wafer bonding, SENS ACTU-A, 76(1-3), 1999, pp. 403-408
Authors:
Anastassakis, E
Siakavellas, M
Citation: E. Anastassakis et M. Siakavellas, Elastic and lattice dynamical properties of textured diamond films, PHYS ST S-B, 215(1), 1999, pp. 189-192
Authors:
Tiginyanu, IM
Ursaki, VV
Raptis, YS
Stergiou, V
Anastassakis, E
Hartnagel, HL
Vogt, A
Prevot, B
Schwab, C
Citation: Im. Tiginyanu et al., Raman modes in porous GaP under hydrostatic pressure, PHYS ST S-B, 211(1), 1999, pp. 281-286
Authors:
Ulrich, C
Debernardi, A
Anastassakis, E
Syassen, K
Cardona, M
Citation: C. Ulrich et al., Raman linewidths of phonons in Si, Ge, and SiC under pressure, PHYS ST S-B, 211(1), 1999, pp. 293-300
Authors:
Ronnow, D
Santos, P
Cardona, M
Anastassakis, E
Kuball, M
Citation: D. Ronnow et al., Piezo-optics of InP in the visible-ultraviolet range (vol 57, pg 4432, 1998), PHYS REV B, 59(3), 1999, pp. 2462-2462
Authors:
Ursaki, VV
Burlakov, II
Tiginyanu, IM
Raptis, YS
Anastassakis, E
Anedda, A
Citation: Vv. Ursaki et al., Phase transitions in defect chalcopyrite compounds under hydrostatic pressure, PHYS REV B, 59(1), 1999, pp. 257-268
Authors:
Anastassakis, E
Citation: E. Anastassakis, Strain characterization of polycrystalline diamond and silicon systems, J APPL PHYS, 86(1), 1999, pp. 249-258
Authors:
Kontos, AG
Anastassakis, E
Chrysanthakopoulos, N
Calamiotou, M
Pohl, UW
Citation: Ag. Kontos et al., Strain profiles in overcritical (001) ZnSe GaAs heteroepitaxial layers, J APPL PHYS, 86(1), 1999, pp. 412-417
Authors:
De Wolf, I
Anastassakis, E
Citation: I. De Wolf et E. Anastassakis, Stress measurements in silicon devices through Raman spectroscopy: Bridging the gap between theory and experiment (vol 79, pg 7148, 1996), J APPL PHYS, 85(10), 1999, pp. 7484-7485
Authors:
Anastassakis, E
Cardona, M
Citation: E. Anastassakis et M. Cardona, Phonons, strains, and pressure in semiconductors, SEM SEMIMET, 55, 1998, pp. 117-233
Risultati:
1-17
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