Authors:
Pisch, A
Blanquet, E
Pons, M
Bernard, C
Anikin, M
Dedulle, JM
Madar, R
Citation: A. Pisch et al., Modelling of SiC sublimation growth process: Influence of experimental parameters on crystal shape, J PHYS IV, 9(P8), 1999, pp. 213-219
Authors:
Grosse, P
Basset, G
Calvat, C
Couchaud, M
Faure, C
Ferrand, B
Grange, Y
Anikin, M
Bluet, JM
Chourou, K
Madar, R
Citation: P. Grosse et al., Influence of reactor cleanness and process conditions on the growth by PVTand the purity of 4H and 6H SiC crystals, MAT SCI E B, 61-2, 1999, pp. 58-62
Citation: Jm. Bluet et al., Weak phonon modes observation using infrared reflectivity for 4H, 6H and 15R polytypes, MAT SCI E B, 61-2, 1999, pp. 212-216
Authors:
Camassel, J
Juillaguet, S
Planes, N
Raymond, A
Grosse, P
Basset, G
Faure, C
Couchaud, M
Bluet, JM
Chourou, K
Anikin, M
Madar, R
Citation: J. Camassel et al., Optical assessment of purity improvement effects in bulk 6H and 4H-SiC wafers grown by physical vapor transport, MAT SCI E B, 61-2, 1999, pp. 258-264