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Results: 1-10 |
Results: 10
Structural defects in SiC ingots investigated by synchrotron diffraction imaging
Authors: Pernot, E Pernot-Rejmankova, P Anikin, M Pelissier, B Moulin, C Madar, R
Citation: E. Pernot et al., Structural defects in SiC ingots investigated by synchrotron diffraction imaging, J PHYS D, 34(10A), 2001, pp. A136-A139
Modelling of SiC sublimation growth process: Influence of experimental parameters on crystal shape
Authors: Pisch, A Blanquet, E Pons, M Bernard, C Anikin, M Dedulle, JM Madar, R
Citation: A. Pisch et al., Modelling of SiC sublimation growth process: Influence of experimental parameters on crystal shape, J PHYS IV, 9(P8), 1999, pp. 213-219
State of the art in the modelling of SiC sublimation growth
Authors: Pons, M Anikin, M Chourou, K Dedulle, JM Madar, R Blanquet, E Pisch, A Bernard, C Grosse, P Faure, C Basset, G Grange, Y
Citation: M. Pons et al., State of the art in the modelling of SiC sublimation growth, MAT SCI E B, 61-2, 1999, pp. 18-28
Influence of reactor cleanness and process conditions on the growth by PVTand the purity of 4H and 6H SiC crystals
Authors: Grosse, P Basset, G Calvat, C Couchaud, M Faure, C Ferrand, B Grange, Y Anikin, M Bluet, JM Chourou, K Madar, R
Citation: P. Grosse et al., Influence of reactor cleanness and process conditions on the growth by PVTand the purity of 4H and 6H SiC crystals, MAT SCI E B, 61-2, 1999, pp. 58-62
Coherent X-ray imaging investigation of macrodefects and micropipes on SiC
Authors: Milita, S Madar, R Baruchel, J Anikin, M Argunova, T
Citation: S. Milita et al., Coherent X-ray imaging investigation of macrodefects and micropipes on SiC, MAT SCI E B, 61-2, 1999, pp. 63-67
Influence of growth conditions on the defect formation in SiC ingots
Authors: Anikin, M Chourou, K Pons, M Bluet, JM Madar, R Grosse, P Faure, C Basset, G Grange, Y
Citation: M. Anikin et al., Influence of growth conditions on the defect formation in SiC ingots, MAT SCI E B, 61-2, 1999, pp. 73-76
Modelling of SiC sublimation growth process: analyses of macrodefects formation
Authors: Chourou, K Anikin, M Bluet, JM Dedulle, JM Madar, R Pons, M Blanquet, E Bernard, C Grosse, P Faure, C Basset, G Grange, Y
Citation: K. Chourou et al., Modelling of SiC sublimation growth process: analyses of macrodefects formation, MAT SCI E B, 61-2, 1999, pp. 82-85
Weak phonon modes observation using infrared reflectivity for 4H, 6H and 15R polytypes
Authors: Bluet, JM Chourou, K Anikin, M Madar, R
Citation: Jm. Bluet et al., Weak phonon modes observation using infrared reflectivity for 4H, 6H and 15R polytypes, MAT SCI E B, 61-2, 1999, pp. 212-216
Electrical and optical characterisation of vanadium in 4H and 6H-SiC
Authors: Lauer, V Bremond, G Souifi, A Guillot, G Chourou, K Anikin, M Madar, R Clerjaud, B Naud, C
Citation: V. Lauer et al., Electrical and optical characterisation of vanadium in 4H and 6H-SiC, MAT SCI E B, 61-2, 1999, pp. 248-252
Optical assessment of purity improvement effects in bulk 6H and 4H-SiC wafers grown by physical vapor transport
Authors: Camassel, J Juillaguet, S Planes, N Raymond, A Grosse, P Basset, G Faure, C Couchaud, M Bluet, JM Chourou, K Anikin, M Madar, R
Citation: J. Camassel et al., Optical assessment of purity improvement effects in bulk 6H and 4H-SiC wafers grown by physical vapor transport, MAT SCI E B, 61-2, 1999, pp. 258-264
Risultati: 1-10 |