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Results: 1-7 |
Results: 7
An analytical model of small-signal parameters for GaAs/AlGaAs inverted high electron mobility transistors
Authors: Liu, KW Anwar, AFM
Citation: Kw. Liu et Afm. Anwar, An analytical model of small-signal parameters for GaAs/AlGaAs inverted high electron mobility transistors, MICROELEC J, 32(1), 2001, pp. 85-88
A temperature-dependent nonlinear analysis of GaN/AlGaN HEMTs using Volterra series
Authors: Ahmed, A Islam, SS Anwar, AFM
Citation: A. Ahmed et al., A temperature-dependent nonlinear analysis of GaN/AlGaN HEMTs using Volterra series, IEEE MICR T, 49(9), 2001, pp. 1518-1524
Temperature dependent transport properties in GaN, A1(x)Ga(1-x)N, and InxGa1-xN semiconductors
Authors: Anwar, AFM Wu, SL Webster, RT
Citation: Afm. Anwar et al., Temperature dependent transport properties in GaN, A1(x)Ga(1-x)N, and InxGa1-xN semiconductors, IEEE DEVICE, 48(3), 2001, pp. 567-572
Impact ionization in InAlAs/InGaAs/InAlAs HEMT's
Authors: Webster, RT Wu, SL Anwar, AFM
Citation: Rt. Webster et al., Impact ionization in InAlAs/InGaAs/InAlAs HEMT's, IEEE ELEC D, 21(5), 2000, pp. 193-195
Base transit time in abrupt GaN/InGaN/GaN HBT's
Authors: Chiu, SY Anwar, AFM Wu, SL
Citation: Sy. Chiu et al., Base transit time in abrupt GaN/InGaN/GaN HBT's, IEEE DEVICE, 47(4), 2000, pp. 662-666
Effect of surface recombination on the Early voltage in HBTs
Authors: Chiu, SY Anwar, AFM
Citation: Sy. Chiu et Afm. Anwar, Effect of surface recombination on the Early voltage in HBTs, SEMIC SCI T, 14(9), 1999, pp. 840-847
Electron-phonon interaction within an unbiased and biased quantum well
Authors: Lefebvre, KR Anwar, AFM
Citation: Kr. Lefebvre et Afm. Anwar, Electron-phonon interaction within an unbiased and biased quantum well, IEEE J Q EL, 35(2), 1999, pp. 216-220
Risultati: 1-7 |