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Results: 1-11 |
Results: 11
Defect reduction in Hg1-xCdxTe grown by molecular beam epitaxy on Cd0.96Zn0.04Te(211)B
Authors: Aqariden, F Shih, HD Turner, AM Liao, PK
Citation: F. Aqariden et al., Defect reduction in Hg1-xCdxTe grown by molecular beam epitaxy on Cd0.96Zn0.04Te(211)B, J ELEC MAT, 30(6), 2001, pp. 794-796
Electrical properties of low-arsenic-doped HgCdTe grown by molecular beam epitaxy
Authors: Aqariden, F Shih, HD Kinch, MA Schaake, HF
Citation: F. Aqariden et al., Electrical properties of low-arsenic-doped HgCdTe grown by molecular beam epitaxy, APPL PHYS L, 78(22), 2001, pp. 3481-3483
Real-time composition control using spectral ellipsometry in growth of Hg1-xCdxTe by molecular beam epitaxy
Authors: Aqariden, F Shih, HD Liao, PK Duncan, WM Dat, R
Citation: F. Aqariden et al., Real-time composition control using spectral ellipsometry in growth of Hg1-xCdxTe by molecular beam epitaxy, J VAC SCI B, 18(3), 2000, pp. 1381-1384
Molecular beam epitaxial growth of HgCdTe on CdZnTe(311)B
Authors: Aqariden, F Shih, HD Turner, AM Chandra, D Liao, PK
Citation: F. Aqariden et al., Molecular beam epitaxial growth of HgCdTe on CdZnTe(311)B, J ELEC MAT, 29(6), 2000, pp. 727-728
Vacancies in Hg1-xCdxTe
Authors: Chandra, D Schaake, HF Tregilgas, JH Aqariden, F Kinch, MA Syllaois, AJ
Citation: D. Chandra et al., Vacancies in Hg1-xCdxTe, J ELEC MAT, 29(6), 2000, pp. 729-731
Isolation and control of voids and void-hillocks during molecular beam epitaxial growth of HgCdTe
Authors: Chandra, D Aqariden, F Frazier, J Gutzler, S Orent, T Shih, WD
Citation: D. Chandra et al., Isolation and control of voids and void-hillocks during molecular beam epitaxial growth of HgCdTe, J ELEC MAT, 29(6), 2000, pp. 887-892
Electrical characteristics of As-doped p-type HgCdTe epilayers grown on CdZnTe(211)B substrates by molecular beam epitaxy
Authors: Yang, B Aqariden, F Grein, CH Jandaska, A Lee, TS Nemani, A Rujirawat, S Shi, XH Sumstine, M Velicu, S Sivananthan, S
Citation: B. Yang et al., Electrical characteristics of As-doped p-type HgCdTe epilayers grown on CdZnTe(211)B substrates by molecular beam epitaxy, J VAC SCI B, 17(3), 1999, pp. 1205-1208
In-situ monitoring of temperature and alloy composition of Hg1-xCdxTe using FTIR spectroscopic techniques
Authors: Daraselia, M Grein, CH Rujirawat, S Yang, B Sivananthan, S Aqariden, F Shih, HD
Citation: M. Daraselia et al., In-situ monitoring of temperature and alloy composition of Hg1-xCdxTe using FTIR spectroscopic techniques, J ELEC MAT, 28(6), 1999, pp. 743-748
Effect of incident angle in spectral ellipsometry on composition control during molecular beam epitaxial growth of HgCdTe
Authors: Aqariden, F Duncan, WM Shih, HD Almeida, LA Bevan, MJ
Citation: F. Aqariden et al., Effect of incident angle in spectral ellipsometry on composition control during molecular beam epitaxial growth of HgCdTe, J ELEC MAT, 28(6), 1999, pp. 756-759
Arsenic incorporation in MBE grown Hg1-xCdxTe
Authors: Grein, CH Garland, JW Sivananthan, S Wijewarnasuriya, PS Aqariden, F Fuchs, M
Citation: Ch. Grein et al., Arsenic incorporation in MBE grown Hg1-xCdxTe, J ELEC MAT, 28(6), 1999, pp. 789-792
Evidence that arsenic is incorporated as As-4 molecules in the molecular beam epitaxial growth of Hg1-xCdxTe : As
Authors: Garland, JW Grein, CH Yang, B Wijewarnasuriya, PS Aqariden, F Sivananthan, S
Citation: Jw. Garland et al., Evidence that arsenic is incorporated as As-4 molecules in the molecular beam epitaxial growth of Hg1-xCdxTe : As, APPL PHYS L, 74(14), 1999, pp. 1975-1977
Risultati: 1-11 |