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Results: 1-18 |
Results: 18
Proton-induced damage in p(+)-n InP solar cells: the role of electron capture at high fluences
Authors: Romero, MJ Walters, RJ Araujo, D Messenger, SR Summers, GP Hoffman, RW Garcia, R
Citation: Mj. Romero et al., Proton-induced damage in p(+)-n InP solar cells: the role of electron capture at high fluences, MAT SCI E B, 80(1-3), 2001, pp. 294-298
SiC thin films obtained by Si carbonization
Authors: Molina, SI Morales, FM Araujo, D
Citation: Si. Molina et al., SiC thin films obtained by Si carbonization, MAT SCI E B, 80(1-3), 2001, pp. 342-344
Structural characterization of high-dose C++N+ ion-implanted (111) Si
Authors: Barbadillo, L Hernandez, MJ Cervera, A Rodriguez, P Piqueras, J Molina, SI Morales, FM Araujo, D
Citation: L. Barbadillo et al., Structural characterization of high-dose C++N+ ion-implanted (111) Si, NUCL INST B, 184(3), 2001, pp. 361-370
Radiation response of n-type base InP solar cells
Authors: Walters, RJ Messenger, SR Summers, GP Romero, MJ Al-Jassim, MM Araujo, D Garcia, R
Citation: Rj. Walters et al., Radiation response of n-type base InP solar cells, J APPL PHYS, 90(7), 2001, pp. 3558-3565
Electron beam induced current and cathodoluminescence study of proton irradiated InAsxP1-x/InP quantum-well solar cells
Authors: Walters, RJ Summers, GP Messenger, SR Romero, MJ Al-Jassim, MM Garcia, R Araujo, D Freundlich, A Newman, F Vilela, MF
Citation: Rj. Walters et al., Electron beam induced current and cathodoluminescence study of proton irradiated InAsxP1-x/InP quantum-well solar cells, J APPL PHYS, 90(6), 2001, pp. 2840-2846
Typical and atypical perfusion patterns in periictal SPECT of patients with unilateral temporal lobe epilepsy
Authors: Wichert-Ana, L Velasco, TR Terra-Bustamante, VC Araujo, D Alexandre, V Kato, M Leite, JP Assirati, JA Machado, HR Bastos, AC Sakamoto, AC
Citation: L. Wichert-ana et al., Typical and atypical perfusion patterns in periictal SPECT of patients with unilateral temporal lobe epilepsy, EPILEPSIA, 42(5), 2001, pp. 660-666
Control of phase modulation in InGaAs epilayers
Authors: Gonzalez, D Aragon, G Araujo, D Garcia, R
Citation: D. Gonzalez et al., Control of phase modulation in InGaAs epilayers, APPL PHYS L, 76(22), 2000, pp. 3236-3238
Multiple quantum well GaAs/AlGaAs solar cells: transport and recombinationproperties by means of EBIC and cathodoluminescence
Authors: Araujo, D Romero, MJ Morier-Genoud, F Garcia, R
Citation: D. Araujo et al., Multiple quantum well GaAs/AlGaAs solar cells: transport and recombinationproperties by means of EBIC and cathodoluminescence, MAT SCI E B, 66(1-3), 1999, pp. 151-156
Failure analysis of heavily proton irradiated p(+)-n InGaP solar cells by EBIC and cathodoluminescence
Authors: Romero, MJ Walters, RJ Araujo, D Garcia, R
Citation: Mj. Romero et al., Failure analysis of heavily proton irradiated p(+)-n InGaP solar cells by EBIC and cathodoluminescence, MAT SCI E B, 66(1-3), 1999, pp. 189-193
Transmission electron microscopy study of InGaAs InP superlattices grown on V-shaped surface InP substrates
Authors: Molina, SI Araujo, D Rojas, TC Garcia, R Morier-Genoud, F Marti, U Reinhart, FK
Citation: Si. Molina et al., Transmission electron microscopy study of InGaAs InP superlattices grown on V-shaped surface InP substrates, APPL SURF S, 145, 1999, pp. 488-491
Effect of In-content on the misfit dislocation interaction in InGaAs GaAs layers
Authors: Gonzalez, D Aragon, G Araujo, D Garcia, R
Citation: D. Gonzalez et al., Effect of In-content on the misfit dislocation interaction in InGaAs GaAs layers, THIN SOL FI, 344, 1999, pp. 302-304
Electron microscopy study of SiC obtained by the carbonization of Si(111)
Authors: Pacheco, FJ Sanchez, AM Molina, SI Araujo, D Devrajan, J Steckl, AJ Garcia, R
Citation: Fj. Pacheco et al., Electron microscopy study of SiC obtained by the carbonization of Si(111), THIN SOL FI, 344, 1999, pp. 305-308
Piezoelectric InGaAs/GaAs (111)B multiple quantum well photodiodes: optoelectronic properties by electron beam induced current and cathodoluminescence
Authors: Romero, MJ Araujo, D Sanchez-Rojas, JL Calleja, E Munoz, E Garcia, R
Citation: Mj. Romero et al., Piezoelectric InGaAs/GaAs (111)B multiple quantum well photodiodes: optoelectronic properties by electron beam induced current and cathodoluminescence, MICROELEC J, 30(4-5), 1999, pp. 413-417
Detailed defect study in proton irradiated InP/Si solar cells
Authors: Walters, RJ Romero, MJ Araujo, D Garcia, R Messenger, SR Summers, GP
Citation: Rj. Walters et al., Detailed defect study in proton irradiated InP/Si solar cells, J APPL PHYS, 86(7), 1999, pp. 3584-3589
Spatial distribution of radiation-induced defects in p(+)-n InGaP solar cells
Authors: Romero, MJ Araujo, D Garcia, R Walters, RJ Summers, GP Messenger, SR
Citation: Mj. Romero et al., Spatial distribution of radiation-induced defects in p(+)-n InGaP solar cells, APPL PHYS L, 74(25), 1999, pp. 3812-3814
Growth rate and critical temperatures to avoid the modulation of composition of InGaAs epitaxial layers
Authors: Gonzalez, D Aragon, G Araujo, D de Castro, MJ Garcia, R
Citation: D. Gonzalez et al., Growth rate and critical temperatures to avoid the modulation of composition of InGaAs epitaxial layers, APPL PHYS L, 74(18), 1999, pp. 2649-2651
Radiation-induced order-disorder transition in p(+)-n InGaP solar cells
Authors: Romero, MJ Araujo, D Garcia, R Walters, RJ Summers, GP Messenger, SR
Citation: Mj. Romero et al., Radiation-induced order-disorder transition in p(+)-n InGaP solar cells, APPL PHYS L, 74(18), 1999, pp. 2684-2686
Characterisation by TEM and X-ray diffraction of linearly graded composition InGaAs buffer layers on (001) GaAs
Authors: Pacheco, FJ Araujo, D Molina, SI Garcia, R Sacedon, A Gonzalez-Sanz, F Calleja, E Kidd, P Lourenco, MA
Citation: Fj. Pacheco et al., Characterisation by TEM and X-ray diffraction of linearly graded composition InGaAs buffer layers on (001) GaAs, MATER SCI T, 14(12), 1998, pp. 1273-1278
Risultati: 1-18 |