AAAAAA

   
Results: 1-9 |
Results: 9
Photoemission studies of alpha-Sn(100)2 x 1 surface
Authors: Le Lay, G Aristov, VY Cricenti, A Perfetti, P Barret, N Guillot, C
Citation: G. Le Lay et al., Photoemission studies of alpha-Sn(100)2 x 1 surface, SURF SCI, 482, 2001, pp. 552-555
Electron accumulation layer on clean In-terminated InAs(001)(4 x 2)-c(8 x 2) surface
Authors: De Padova, P Quaresima, C Perfetti, P Larciprete, R Brochier, R Richter, C Ilakovac, V Bencok, P Teodorescu, C Aristov, VY Johnson, RL Hricovini, K
Citation: P. De Padova et al., Electron accumulation layer on clean In-terminated InAs(001)(4 x 2)-c(8 x 2) surface, SURF SCI, 482, 2001, pp. 587-592
Electronic properties of alpha-Sn(100)2x1: Evidence for asymmetric dimer reconstruction
Authors: Cricenti, A Perfetti, P Barret, N Guillot, C Aristov, VY Le Lay, G
Citation: A. Cricenti et al., Electronic properties of alpha-Sn(100)2x1: Evidence for asymmetric dimer reconstruction, APPL PHYS L, 78(20), 2001, pp. 3032-3034
Photoemission measurements of quantum states in accumulation layers at narrow band gap III-V semiconductor surfaces
Authors: Aristov, VY Zhilin, VM Grupp, C Taleb-Ibrahimi, A Kim, HJ Mangat, PS Soukiassian, P Le Lay, G
Citation: Vy. Aristov et al., Photoemission measurements of quantum states in accumulation layers at narrow band gap III-V semiconductor surfaces, APPL SURF S, 166(1-4), 2000, pp. 263-267
1D electronic properties in temperature-induced c(4x2) to 2x1 transition on the beta-SiC(100) surface
Authors: Enriquez, H Derycke, V Aristov, VY Soukiassian, P Le Lay, G di Cioccio, L Cricenti, A Croti, C Ferrari, L Perfetti, P
Citation: H. Enriquez et al., 1D electronic properties in temperature-induced c(4x2) to 2x1 transition on the beta-SiC(100) surface, APPL SURF S, 162, 2000, pp. 559-564
Oxynitridation of cubic silicon carbide (100) surfaces
Authors: Amy, F Douillard, L Aristov, VY Soukiassian, P
Citation: F. Amy et al., Oxynitridation of cubic silicon carbide (100) surfaces, J VAC SCI A, 17(5), 1999, pp. 2629-2633
Core-level photoemission spectroscopy of the beta-SiC(100) c(4 x 2) surface
Authors: Aristov, VY Enriquez, H Derycke, V Soukiassian, P Le Lay, G Grupp, C Taleb-Ibrahimi, A
Citation: Vy. Aristov et al., Core-level photoemission spectroscopy of the beta-SiC(100) c(4 x 2) surface, PHYS REV B, 60(24), 1999, pp. 16553-16557
Direct measurement of quantum-state dispersion in an accumulation layer ata semiconductor surface
Authors: Aristov, VY Le Lay, G Zhilin, VM Indlekofer, G Grupp, C Taleb-Ibrahimi, A Soukiassian, P
Citation: Vy. Aristov et al., Direct measurement of quantum-state dispersion in an accumulation layer ata semiconductor surface, PHYS REV B, 60(11), 1999, pp. 7752-7755
High temperature dismantling of Si atomic lines on beta-SiC(100)
Authors: Aristov, VY Douillard, L Soukiassian, P
Citation: Vy. Aristov et al., High temperature dismantling of Si atomic lines on beta-SiC(100), SURF SCI, 440(1-2), 1999, pp. L825-L830
Risultati: 1-9 |