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Results: 1-11 |
Results: 11
Confinement induced enhancement of the emission in Er-implanted Si/SiO2 quantum wells fabricated on SOI substrates
Authors: Sotta, D Calvo, V Ulmer-Tuffigo, H Magnea, N Hadji, E Fournel, F Rouviere, JL Jalabert, D Moriceau, H Aspar, B
Citation: D. Sotta et al., Confinement induced enhancement of the emission in Er-implanted Si/SiO2 quantum wells fabricated on SOI substrates, MAT SCI E B, 81(1-3), 2001, pp. 43-45
The generic nature of the Smart-Cut((R)) process for thin film transfer
Authors: Aspar, B Moriceau, H Jalaguier, E Lagahe, C Soubie, A Biasse, B Papon, AM Claverie, A Grisolia, J Benassayag, G Letertre, F Rayssac, O Barge, T Maleville, C Ghyselen, B
Citation: B. Aspar et al., The generic nature of the Smart-Cut((R)) process for thin film transfer, J ELEC MAT, 30(7), 2001, pp. 834-840
High-energy x-ray reflectivity of buried interfaces created by wafer bonding - art. no. 125408
Authors: Rieutord, F Eymery, J Fournel, F Buttard, D Oeser, R Plantevin, O Moriceau, H Aspar, B
Citation: F. Rieutord et al., High-energy x-ray reflectivity of buried interfaces created by wafer bonding - art. no. 125408, PHYS REV B, 6312(12), 2001, pp. 5408
InP microdisk lasers on silicon wafer: CW room temperature operation at 1.6 mu m
Authors: Seassal, C Rojo-Romeo, P Letartre, X Viktorovitch, P Hollinger, G Jalaguier, E Pocas, S Aspar, B
Citation: C. Seassal et al., InP microdisk lasers on silicon wafer: CW room temperature operation at 1.6 mu m, ELECTR LETT, 37(4), 2001, pp. 222-223
InP 2D photonic crystal microlasers on silicon wafer: room temperature operation at 1.55 mu m
Authors: Monat, C Seassal, C Letartre, X Viktorovitch, P Regreny, P Gendry, M Rojo-Romeo, P Hollinger, G Jalaguier, E Pocas, S Aspar, B
Citation: C. Monat et al., InP 2D photonic crystal microlasers on silicon wafer: room temperature operation at 1.55 mu m, ELECTR LETT, 37(12), 2001, pp. 764-766
Ultra thin silicon films directly bonded onto silicon wafers
Authors: Fournel, F Moriceau, H Magnea, N Eymery, J Rouviere, JL Rousseau, K Aspar, B
Citation: F. Fournel et al., Ultra thin silicon films directly bonded onto silicon wafers, MAT SCI E B, 73(1-3), 2000, pp. 42-46
Nanometric patterning with ultrathin twist bonded silicon wafers
Authors: Fournel, F Moriceau, H Magnea, N Eymery, J Buttard, D Rouviere, JL Rousseau, K Aspar, B
Citation: F. Fournel et al., Nanometric patterning with ultrathin twist bonded silicon wafers, THIN SOL FI, 380(1-2), 2000, pp. 10-14
Kinetic aspects of the growth of hydrogen induced platelets in SiC
Authors: Grisolia, J Cristiano, F De Mauduit, B Ben Assayag, G Letertre, F Aspar, B Di Cioccio, L Claverie, A
Citation: J. Grisolia et al., Kinetic aspects of the growth of hydrogen induced platelets in SiC, J APPL PHYS, 87(12), 2000, pp. 8415-8419
A transmission electron microscopy quantitative study of the growth kinetics of H platelets in Si
Authors: Grisolia, J Ben Assayag, G Claverie, A Aspar, B Lagahe, C Laanab, L
Citation: J. Grisolia et al., A transmission electron microscopy quantitative study of the growth kinetics of H platelets in Si, APPL PHYS L, 76(7), 2000, pp. 852-854
Smart-Cut (R) process using metallic bonding: Application to transfer of Si, GaAs, InP thin films
Authors: Aspar, B Jalaguier, E Mas, A Locatelli, C Rayssac, O Moriceau, H Pocas, S Papon, AM Michaud, JF Bruel, M
Citation: B. Aspar et al., Smart-Cut (R) process using metallic bonding: Application to transfer of Si, GaAs, InP thin films, ELECTR LETT, 35(12), 1999, pp. 1024-1025
X-ray reflectivity of ultrathin twist-bonded silicon wafers
Authors: Eymery, J Fournel, F Rieutord, F Buttard, D Moriceau, H Aspar, B
Citation: J. Eymery et al., X-ray reflectivity of ultrathin twist-bonded silicon wafers, APPL PHYS L, 75(22), 1999, pp. 3509-3511
Risultati: 1-11 |