AAAAAA

   
Results: 1-25 | 26-42 |
Results: 26-42/42
(BaxSr1-x)Ti1+yO3+z interface contamination and its effect on electrical properties
Authors: Im, J Streiffer, SK Auciello, O Krauss, AR
Citation: J. Im et al., (BaxSr1-x)Ti1+yO3+z interface contamination and its effect on electrical properties, APPL PHYS L, 77(16), 2000, pp. 2593-2595
Layer-by-layer growth of GaN induced by silicon
Authors: Munkholm, A Thompson, C Murty, MVR Eastman, JA Auciello, O Stephenson, GB Fini, P DenBaars, SP Speck, JS
Citation: A. Munkholm et al., Layer-by-layer growth of GaN induced by silicon, APPL PHYS L, 77(11), 2000, pp. 1626-1628
Composition-control of magnetron-sputter-deposited (BaxSr1-x)Ti1+yO3+z thin films for voltage tunable devices
Authors: Im, J Auciello, O Baumann, PK Streiffer, SK Kaufman, DY Krauss, AR
Citation: J. Im et al., Composition-control of magnetron-sputter-deposited (BaxSr1-x)Ti1+yO3+z thin films for voltage tunable devices, APPL PHYS L, 76(5), 2000, pp. 625-627
Influence of Pt heterostructure bottom electrodes on SrBi2Ta2O9 thin film properties
Authors: Kim, SH Kim, DJ Maria, JP Kingon, AI Streiffer, SK Im, J Auciello, O Krauss, AR
Citation: Sh. Kim et al., Influence of Pt heterostructure bottom electrodes on SrBi2Ta2O9 thin film properties, APPL PHYS L, 76(4), 2000, pp. 496-498
In situ, real-time measurement of wing tilt during lateral epitaxial overgrowth of GaN
Authors: Fini, P Munkholm, A Thompson, C Stephenson, GB Eastman, JA Murty, MVR Auciello, O Zhao, L DenBaars, SP Speck, JS
Citation: P. Fini et al., In situ, real-time measurement of wing tilt during lateral epitaxial overgrowth of GaN, APPL PHYS L, 76(26), 2000, pp. 3893-3895
Epitaxial Pb(Mg1/3Nb2/3)O-3 thin films synthesized by metal-organic chemical vapor deposition
Authors: Bai, GR Streiffer, SK Baumann, PK Auciello, O Ghosh, K Stemmer, S Munkholm, A Thompson, C Rao, RA Eom, CB
Citation: Gr. Bai et al., Epitaxial Pb(Mg1/3Nb2/3)O-3 thin films synthesized by metal-organic chemical vapor deposition, APPL PHYS L, 76(21), 2000, pp. 3106-3108
Studies of field emission from bias-grown diamond thin films
Authors: Ding, MQ Gruen, DM Krauss, AR Auciello, O Corrigan, TD Chang, RPH
Citation: Mq. Ding et al., Studies of field emission from bias-grown diamond thin films, J VAC SCI B, 17(2), 1999, pp. 705-709
Studies of ferroelectric heterostructure thin films, interfaces, and device-related processes via in situ analytical techniques
Authors: Auciello, O Krauss, AR Im, J Dhote, A Gruen, DM Aggarwal, S Ramesh, R Irene, EA Gao, Y Mueller, AH
Citation: O. Auciello et al., Studies of ferroelectric heterostructure thin films, interfaces, and device-related processes via in situ analytical techniques, INTEGR FERR, 27(1-4), 1999, pp. 1147-1162
Studies of hydrogen-induced degradation processes in Pb(Zr1-xTix)O-3 (PZT)and SrBi2Ta2O9 (SBT) ferroelectric film-based capacitors
Authors: Krauss, AR Dhote, A Auciello, O Im, J Ramesh, R Aggarwal, S
Citation: Ar. Krauss et al., Studies of hydrogen-induced degradation processes in Pb(Zr1-xTix)O-3 (PZT)and SrBi2Ta2O9 (SBT) ferroelectric film-based capacitors, INTEGR FERR, 27(1-4), 1999, pp. 1191-1201
Impact of changes in the Pt heterostructure bottom electrodes on the ferroelectric properties of SBT thin films
Authors: Kim, SH Kim, DJ Im, J Streiffer, SK Auciello, O Maria, JP Kingon, AI
Citation: Sh. Kim et al., Impact of changes in the Pt heterostructure bottom electrodes on the ferroelectric properties of SBT thin films, INTEGR FERR, 26(1-4), 1999, pp. 955-970
Real-time X-ray scattering studies of surface structure during metalorganic: Chemical vapor deposition of GaN
Authors: Stephenson, GB Eastman, JA Auciello, O Munkholm, A Thompson, C Fuoss, PH Fini, P DenBaars, SP Speck, JS
Citation: Gb. Stephenson et al., Real-time X-ray scattering studies of surface structure during metalorganic: Chemical vapor deposition of GaN, MRS BULL, 24(1), 1999, pp. 21-25
In situ study of interface reactions of ion beam sputter deposited (Ba0.5Sr0.5)TiO3 films on Si, SiO2, and Ir
Authors: Gao, Y Mueller, AH Irene, EA Auciello, O Krauss, A Schultz, JA
Citation: Y. Gao et al., In situ study of interface reactions of ion beam sputter deposited (Ba0.5Sr0.5)TiO3 films on Si, SiO2, and Ir, J VAC SCI A, 17(4), 1999, pp. 1880-1886
Surface structure of GaN(0001) in the chemical vapor deposition environment
Authors: Munkholm, A Stephenson, GB Eastman, JA Thompson, C Fini, P Speck, JS Auciello, O Fuoss, PH DenBaars, SP
Citation: A. Munkholm et al., Surface structure of GaN(0001) in the chemical vapor deposition environment, PHYS REV L, 83(4), 1999, pp. 741-744
Real-time study of oxygen in c-axis oriented YBa2Cu3O7-delta thin films using in situ spectroscopic ellipsometry
Authors: Gao, Y Mueller, AH Irene, EA Auciello, O Krauss, AR Schultz, JA
Citation: Y. Gao et al., Real-time study of oxygen in c-axis oriented YBa2Cu3O7-delta thin films using in situ spectroscopic ellipsometry, J APPL PHYS, 86(12), 1999, pp. 6979-6984
Demonstration of Li-based alloy coatings as low-voltage stable electron-emission surfaces for field-emission devices
Authors: Auciello, O Krauss, AR Gruen, DM Shah, P Corrigan, T Kordesch, ME Chang, RPH Barr, TL
Citation: O. Auciello et al., Demonstration of Li-based alloy coatings as low-voltage stable electron-emission surfaces for field-emission devices, J APPL PHYS, 85(12), 1999, pp. 8405-8409
Studies of hydrogen-induced degradation processes in SrBi2Ta2O9 ferroelectric film-based capacitors
Authors: Im, J Auciello, O Krauss, AR Gruen, DM Chang, RPH Kim, SH Kingon, AI
Citation: J. Im et al., Studies of hydrogen-induced degradation processes in SrBi2Ta2O9 ferroelectric film-based capacitors, APPL PHYS L, 74(8), 1999, pp. 1162-1164
Observation of growth modes during metal-organic chemical vapor depositionof GaN
Authors: Stephenson, GB Eastman, JA Thompson, C Auciello, O Thompson, LJ Munkholm, A Fini, P DenBaars, SP Speck, JS
Citation: Gb. Stephenson et al., Observation of growth modes during metal-organic chemical vapor depositionof GaN, APPL PHYS L, 74(22), 1999, pp. 3326-3328
Risultati: 1-25 | 26-42 |