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Results: 1-9 |
Results: 9
Fabrication and photoluminescence of GaN sapphire submicron-scale structures with nanometre scale resolution
Authors: Ribayrol, A Coquillat, D De la Rue, RM Murad, SK Wilkinson, CDW Girard, P Briot, O Aulombard, RL
Citation: A. Ribayrol et al., Fabrication and photoluminescence of GaN sapphire submicron-scale structures with nanometre scale resolution, MAT SCI E B, 59(1-3), 1999, pp. 335-339
Photoluminescence characterisation of triangular lattices of holes and pillars etched in GaN epilayers
Authors: Coquillat, D Ribayrol, A de la Rue, RM Girard, P Briot, O Aulombard, RL Cassagne, D Jouanin, C
Citation: D. Coquillat et al., Photoluminescence characterisation of triangular lattices of holes and pillars etched in GaN epilayers, PHYS ST S-B, 216(1), 1999, pp. 669-673
Influence of defect states on the nonlinear optical properties of GaN
Authors: Haag, H Honerlage, B Briot, O Aulombard, RL
Citation: H. Haag et al., Influence of defect states on the nonlinear optical properties of GaN, PHYS REV B, 60(16), 1999, pp. 11624-11630
Excitonic absorption of GaN epilayers on sapphire: Dynamics, intensity, and temperature dependence
Authors: Haag, H Gilliot, P Levy, R Honerlage, B Briot, O Ruffenach-Clur, S Aulombard, RL
Citation: H. Haag et al., Excitonic absorption of GaN epilayers on sapphire: Dynamics, intensity, and temperature dependence, PHYS REV B, 59(3), 1999, pp. 2254-2260
MOCVD growth of cubic gallium nitride: Effect of V/III ratio
Authors: Moret, M Ruffenach-Clur, S Moreaud, N Briot, O Calas, J Aulombard, RL
Citation: M. Moret et al., MOCVD growth of cubic gallium nitride: Effect of V/III ratio, PHYS ST S-A, 176(1), 1999, pp. 493-496
Degenerate four-wave mixing experiments on GaN in the quasistationary regime
Authors: Haag, H Gilliot, P Levy, R Honerlage, B Briot, O Ruffenach-Clur, S Aulombard, RL
Citation: H. Haag et al., Degenerate four-wave mixing experiments on GaN in the quasistationary regime, APPL PHYS L, 74(10), 1999, pp. 1436-1438
Determination of light amplification processes in MOCVD grown ZnCdSe GRINSCH structures
Authors: Mikulskas, I Brinkmann, D Luterova, K Tomasiunas, R Honerlage, B Vaitkus, JV Aulombard, RL Cloitre, T
Citation: I. Mikulskas et al., Determination of light amplification processes in MOCVD grown ZnCdSe GRINSCH structures, THIN SOL FI, 336(1-2), 1998, pp. 326-331
Raman and photoreflectance studies of electronic band bending at ZnSe/GaAsinterfaces
Authors: Pages, O Erguig, H Wagner, V Zaoui, A Laurenti, JP Gueurts, J Aourag, H Aulombard, RL Certier, M
Citation: O. Pages et al., Raman and photoreflectance studies of electronic band bending at ZnSe/GaAsinterfaces, THIN SOL FI, 336(1-2), 1998, pp. 381-385
Optical nonlinearities of gallium nitride
Authors: Haag, H Gilliot, P Honerlage, B Briot, O Aulombard, RL
Citation: H. Haag et al., Optical nonlinearities of gallium nitride, ANN PHYSIQ, 23, 1998, pp. 161-162
Risultati: 1-9 |