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Results: 1-9 |
Results: 9
The dependence of UMOSFET characteristics and reliability on geometry and processing
Authors: Suliman, SA Gollagunta, N Trabzon, L Hao, J Ridley, RS Knoedler, CM Dolny, GM Awadelkarim, OO Fonash, SJ
Citation: Sa. Suliman et al., The dependence of UMOSFET characteristics and reliability on geometry and processing, SEMIC SCI T, 16(6), 2001, pp. 447-454
The effects of channel boron-doping on the performance and hot electron reliability of N-channel trend UMOSFETs
Authors: Suliman, SA Awadelkarim, OO Fonash, SJ Dolny, GM Hao, J Ridley, RS Knoedler, CM
Citation: Sa. Suliman et al., The effects of channel boron-doping on the performance and hot electron reliability of N-channel trend UMOSFETs, SOL ST ELEC, 45(5), 2001, pp. 655-661
Metal-induced solid-phase crystallization of hydrogenated amorphous silicon: dependence on metal type and annealing temperature
Authors: Wang, YZ Awadelkarim, OO
Citation: Yz. Wang et Oo. Awadelkarim, Metal-induced solid-phase crystallization of hydrogenated amorphous silicon: dependence on metal type and annealing temperature, APPL PHYS A, 70(5), 2000, pp. 587-590
Damage to sub-half-micron metal-oxide-silicon field-effect transistors from plasma processing of low-k polymer interlayer dielectrics
Authors: Trabzon, L Awadelkarim, OO
Citation: L. Trabzon et Oo. Awadelkarim, Damage to sub-half-micron metal-oxide-silicon field-effect transistors from plasma processing of low-k polymer interlayer dielectrics, SEMIC SCI T, 15(4), 2000, pp. 309-314
Dependence of the performance and reliability of n-metal-oxide-silicon field effect transistors on interlayer dielectric processing
Authors: Trabzon, L Awadelkarim, OO Werking, J
Citation: L. Trabzon et al., Dependence of the performance and reliability of n-metal-oxide-silicon field effect transistors on interlayer dielectric processing, J VAC SCI B, 17(5), 1999, pp. 2216-2221
The impact of RCA treatment of glass substrates on the properties of polycrystalline silicon thin him transistors
Authors: Awadelkarim, OO Wang, YZ
Citation: Oo. Awadelkarim et Yz. Wang, The impact of RCA treatment of glass substrates on the properties of polycrystalline silicon thin him transistors, MICROEL ENG, 45(4), 1999, pp. 299-310
Polycrystalline silicon/dielectric/substrate material systems for thin film transistor applications: The impact of material properties on transistors' characteristics
Authors: Wang, YZ Awadelkarim, OO
Citation: Yz. Wang et Oo. Awadelkarim, Polycrystalline silicon/dielectric/substrate material systems for thin film transistor applications: The impact of material properties on transistors' characteristics, PHYS ST S-A, 176(2), 1999, pp. 885-909
Crystallization of a-Si : H on glass for active layers in thin film transistors - Effects of glass coating
Authors: Wang, YZ Fonash, SJ Awadelkarim, OO Gu, T
Citation: Yz. Wang et al., Crystallization of a-Si : H on glass for active layers in thin film transistors - Effects of glass coating, J ELCHEM SO, 146(1), 1999, pp. 299-305
The effects of SiO2 barrier between active layer and substrate on the performance and reliability of polycrystalline silicon thin film transistors
Authors: Wang, YZ Awadelkarim, OO
Citation: Yz. Wang et Oo. Awadelkarim, The effects of SiO2 barrier between active layer and substrate on the performance and reliability of polycrystalline silicon thin film transistors, MICROEL REL, 38(12), 1998, pp. 1835-1846
Risultati: 1-9 |