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Results: 1-9 |
Results: 9
VACANCY EQUILIBRIUM CONCENTRATION ON (111), (100) AND (110) PLANES OFSILICON CRYSTAL-SURFACE IN GIBBS ADSORPTION MODEL
Authors: BAKOVETS VV
Citation: Vv. Bakovets, VACANCY EQUILIBRIUM CONCENTRATION ON (111), (100) AND (110) PLANES OFSILICON CRYSTAL-SURFACE IN GIBBS ADSORPTION MODEL, Physica status solidi. b, Basic research, 205(2), 1998, pp. 507-509
QUANTUM-CHEMICAL STUDY OF CHANGES IN THE MAGNETIC STATE OF NI(AA)(2) AND NI(KTF)(2) ADSORBED ON THE SURFACE OF NATURAL SILICA
Authors: FOMIN ES BAKOVETS VV IKORSKII VN
Citation: Es. Fomin et al., QUANTUM-CHEMICAL STUDY OF CHANGES IN THE MAGNETIC STATE OF NI(AA)(2) AND NI(KTF)(2) ADSORBED ON THE SURFACE OF NATURAL SILICA, Journal of structural chemistry, 39(2), 1998, pp. 186-191
GROWTH AND WETTING ANGLES AS THE CONTROL PARAMETERS OF CRYSTAL SHAPE IN CZOCHRALSKI METHOD
Authors: BAKOVETS VV
Citation: Vv. Bakovets, GROWTH AND WETTING ANGLES AS THE CONTROL PARAMETERS OF CRYSTAL SHAPE IN CZOCHRALSKI METHOD, Journal of crystal growth, 193(4), 1998, pp. 720-727
AN ULTRAHIGH-VACUUM CELL FOR IR SPECTROSCOPY OF ADSORBED LAYERS BY THE METHOD OF MULTIPLE FRUSTRATED TOTAL INTERNAL-REFLECTION
Authors: GRAIFER MZ BORISOV VO BAKOVETS VV
Citation: Mz. Graifer et al., AN ULTRAHIGH-VACUUM CELL FOR IR SPECTROSCOPY OF ADSORBED LAYERS BY THE METHOD OF MULTIPLE FRUSTRATED TOTAL INTERNAL-REFLECTION, Instruments and experimental techniques, 41(3), 1998, pp. 424-426
KINETICS OF NICKEL DEPOSITION FROM NI(HL-ASTERISK)(2) VAPOR
Authors: BORISOV VO BAKOVETS VV BAKHTUROVA LF DOLGOVESOVA IP
Citation: Vo. Borisov et al., KINETICS OF NICKEL DEPOSITION FROM NI(HL-ASTERISK)(2) VAPOR, Inorganic materials, 31(8), 1995, pp. 1026-1027
THE KINETICS OF THE DEPOSITION OF NICKEL FILMS FROM NICKEL DIMETHYL GLYOXIMATE VAPORS
Authors: BAKOVETS VV GRAIFER MZ LEVASHOVA TM DOLGOVESOVA IP
Citation: Vv. Bakovets et al., THE KINETICS OF THE DEPOSITION OF NICKEL FILMS FROM NICKEL DIMETHYL GLYOXIMATE VAPORS, Inorganic materials, 31(2), 1995, pp. 206-209
A NEW EXPERIMENTAL-METHOD OF THE SURFACE-TENSION ANGLE DERIVATIVE (STAD) DETERMINATION
Authors: BAKOVETS VV DOLGOVESOVA IP
Citation: Vv. Bakovets et Ip. Dolgovesova, A NEW EXPERIMENTAL-METHOD OF THE SURFACE-TENSION ANGLE DERIVATIVE (STAD) DETERMINATION, Journal of physical chemistry, 98(29), 1994, pp. 7211-7213
LAYER-BY-LAYER INVESTIGATION OF ION-IMPLANTED SILICON BY METHODS OF ELLIPSOMETRY AND SELECTIVE WETTING
Authors: BAKHTUROVA LF BAKOVETS VV DOLGOVESOVA IP AYUPOV BM
Citation: Lf. Bakhturova et al., LAYER-BY-LAYER INVESTIGATION OF ION-IMPLANTED SILICON BY METHODS OF ELLIPSOMETRY AND SELECTIVE WETTING, Semiconductors, 27(4), 1993, pp. 327-330
ANGULAR DERIVATIVE OF THE SURFACE-TENSION OF THE (100) FACE OF KCI CRYSTALS
Authors: BAKOVETS VV DOLGOVESOVA IP
Citation: Vv. Bakovets et Ip. Dolgovesova, ANGULAR DERIVATIVE OF THE SURFACE-TENSION OF THE (100) FACE OF KCI CRYSTALS, Colloid journal of the Russian Academy of Sciences, 55(3), 1993, pp. 498-500
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