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Results: 1-11 |
Results: 11
EXPERIMENTAL AND THEORETICAL-STUDY OF COR RELATED ENERGETIC AND ANGULAR-DISTRIBUTIONS OF ELECTRONS BACKSCATTERED BY GOLD AND SILICON TARGETIN A SCANNING ELECTRON-MICROSCOPE
Authors: GERARD P OUABBOU A BALLADORE JL MARTINEZ JP
Citation: P. Gerard et al., EXPERIMENTAL AND THEORETICAL-STUDY OF COR RELATED ENERGETIC AND ANGULAR-DISTRIBUTIONS OF ELECTRONS BACKSCATTERED BY GOLD AND SILICON TARGETIN A SCANNING ELECTRON-MICROSCOPE, Journal de physique. III, 7(5), 1997, pp. 963-977
3RD-NEAREST-NEIGHBOR CARBON PAIRS IN EPITAXIAL SI1-YCY ALLOYS - LOCALORDER FOR CARBON IN SILICON CHARACTERIZED BY X-RAY PHOTOELECTRON DIFFRACTION AND RAMAN-SPECTROSCOPY
Authors: SIMON L KUBLER L GROENEN J BALLADORE JL
Citation: L. Simon et al., 3RD-NEAREST-NEIGHBOR CARBON PAIRS IN EPITAXIAL SI1-YCY ALLOYS - LOCALORDER FOR CARBON IN SILICON CHARACTERIZED BY X-RAY PHOTOELECTRON DIFFRACTION AND RAMAN-SPECTROSCOPY, Physical review. B, Condensed matter, 56(15), 1997, pp. 9947-9957
A C 1S CORE-LEVEL X-RAY PHOTOELECTRON DIFFRACTION CHARACTERIZATION OFSUBSTITUTIONAL CARBON IN EPITAXIAL SI1-YCY ALLOYS GROWN ON SI(111) AND SI(001)
Authors: SIMON L AUBEL D KUBLER L BISCHOFF JL GEWINNER G BALLADORE JL
Citation: L. Simon et al., A C 1S CORE-LEVEL X-RAY PHOTOELECTRON DIFFRACTION CHARACTERIZATION OFSUBSTITUTIONAL CARBON IN EPITAXIAL SI1-YCY ALLOYS GROWN ON SI(111) AND SI(001), Journal of applied physics, 81(6), 1997, pp. 2635-2642
WAVELET ANALYSIS OF X-RAY SPECTROSCOPIC DATA .1. THE METHOD
Authors: BURY P ENNODE N PETIT JM BENDJOYA P MARTINEZ JP PINNA H JAUD J BALLADORE JL
Citation: P. Bury et al., WAVELET ANALYSIS OF X-RAY SPECTROSCOPIC DATA .1. THE METHOD, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 383(2-3), 1996, pp. 572-588
XTEM AND IR ABSORPTION ANALYSIS OF SILICON-CARBIDE PREPARED BY HIGH-TEMPERATURE CARBON IMPLANTATION IN SILICON
Authors: SIMON L FAURE J MESLI A HEISER T GROB JJ BALLADORE JL
Citation: L. Simon et al., XTEM AND IR ABSORPTION ANALYSIS OF SILICON-CARBIDE PREPARED BY HIGH-TEMPERATURE CARBON IMPLANTATION IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 330-333
EPITAXIAL-GROWTH OF SI1-YCY ALLOYS CHARACTERIZED AS SELF-ORGANIZED, ORDERED, NANOMETER-SIZED C-RICH AGGREGATES IN MONOCRYSTALLINE SI
Authors: SIMON L KUBLER L BISCHOFF JL BOLMONT D FAURE J CLAVERIE A BALLADORE JL
Citation: L. Simon et al., EPITAXIAL-GROWTH OF SI1-YCY ALLOYS CHARACTERIZED AS SELF-ORGANIZED, ORDERED, NANOMETER-SIZED C-RICH AGGREGATES IN MONOCRYSTALLINE SI, Physical review. B, Condensed matter, 54(15), 1996, pp. 10559-10564
OBSERVATION OF SI OUT-DIFFUSION RELATED DEFECTS IN SIC GROWTH ON SI(001)
Authors: DIANI M MESLI A KUBLER L CLAVERIE A BALLADORE JL AUBEL D PEYRE S HEISER T BISCHOFF JL
Citation: M. Diani et al., OBSERVATION OF SI OUT-DIFFUSION RELATED DEFECTS IN SIC GROWTH ON SI(001), Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 110-113
EXPERIMENTAL-DETERMINATION OF ANGULAR-ENERGY DISTRIBUTIONS OF ELECTRONS BACKSCATTERED BY BULK GOLD AND SILICON SAMPLES
Authors: GERARD P BALLADORE JL MARTINEZ JP OUABBOU A
Citation: P. Gerard et al., EXPERIMENTAL-DETERMINATION OF ANGULAR-ENERGY DISTRIBUTIONS OF ELECTRONS BACKSCATTERED BY BULK GOLD AND SILICON SAMPLES, Scanning, 17(6), 1995, pp. 377-386
A PARTICULAR EPITAXIAL SI1-YCY ALLOY GROWTH MODE ON SI(001) EVIDENCEDBY CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY
Authors: CLAVERIE A FAURE J BALLADORE JL SIMON L MESLI A DIANI M KUBLER L AUBEL D
Citation: A. Claverie et al., A PARTICULAR EPITAXIAL SI1-YCY ALLOY GROWTH MODE ON SI(001) EVIDENCEDBY CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY, Journal of crystal growth, 157(1-4), 1995, pp. 420-425
PROXIMITY EFFECTS IN ELECTRON-BEAM LITHOGRAPHY IN SAL-601 RESISTS ON A SI-SIO2-SI SUBSTRATE
Authors: OUABBOU A MARTINEZ JP LALANNE F GERARD P BALLADORE JL
Citation: A. Ouabbou et al., PROXIMITY EFFECTS IN ELECTRON-BEAM LITHOGRAPHY IN SAL-601 RESISTS ON A SI-SIO2-SI SUBSTRATE, Microelectronic engineering, 20(4), 1993, pp. 255-275
PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF A1N (10(1)OVER-BAR-0) ONSI (100) - MICROSTRUCTURAL STUDY OF THE INTERLAYERS
Authors: AZEMA N DURAND J BERJOAN R DUPUY C BALLADORE JL COT L
Citation: N. Azema et al., PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF A1N (10(1)OVER-BAR-0) ONSI (100) - MICROSTRUCTURAL STUDY OF THE INTERLAYERS, Journal of crystal growth, 129(3-4), 1993, pp. 621-628
Risultati: 1-11 |