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Results:
1-13
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Results: 13
Authors:
GODOY A
GAMIZ F
PALMA A
JIMENEZTEJADA JA
BANQUERI J
LOPEZVILLANUEVA JA
Citation: A. Godoy et al., INFLUENCE OF MOBILITY FLUCTUATIONS ON RANDOM TELEGRAPH SIGNAL AMPLITUDE IN N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS, Journal of applied physics, 82(9), 1997, pp. 4621-4628
Authors:
LOPEZVILLANUEVA JA
CARTUJOCASINELLO P
BANQUERI J
GAMIZ F
RODRIGUEZ S
Citation: Ja. Lopezvillanueva et al., EFFECTS OF THE INVERSION LAYER CENTROID ON MOSFET BEHAVIOR, I.E.E.E. transactions on electron devices, 44(11), 1997, pp. 1915-1922
Authors:
BANQUERI J
LOPEZVILLANUEVA J
GAMIZ F
PALMA A
CARCELLER JE
Citation: J. Banqueri et al., SEMIEMPIRICAL MODEL OF ELECTRON-MOBILITY IN MOSFETS IN STRONG INVERSION REGIME, IEE proceedings. Circuits, devices and systems, 143(4), 1996, pp. 202-206
Authors:
BANQUERI J
LOPEZVILLANUEVA JA
GAMIZ F
CARCELLER JE
LORATAMAYO E
LOZANO M
Citation: J. Banqueri et al., A PROCEDURE FOR THE DETERMINATION OF THE EFFECTIVE MOBILITY IN AN N-MOSFET IN THE MODERATE INVERSION REGION, Solid-state electronics, 39(6), 1996, pp. 875-883
Authors:
GAMIZ F
LOPEZVILLANUEVA JA
BANQUERI J
GHAILAN Y
CARCELLER JE
Citation: F. Gamiz et al., OXIDE CHARGE SPACE CORRELATION IN INVERSION-LAYERS .2. 3-DIMENSIONAL OXIDE CHARGE-DISTRIBUTION, Semiconductor science and technology, 10(5), 1995, pp. 592-600
Authors:
LOPEZVILLANUEVA JA
CARCELLER JE
GAMIZ F
BANQUERI J
Citation: Ja. Lopezvillanueva et al., ELECTRON TRAPPING AND DETRAPPING IN NEAR-INTERFACIAL TRAPS DURING FOWLER-NORDHEIM TUNNELING INJECTION AT 77 K, Microelectronic engineering, 28(1-4), 1995, pp. 317-320
Authors:
GAMIZ F
BANQUERI J
CARCELLER JE
LOPEZVILLANUEVA JA
Citation: F. Gamiz et al., EFFECTS OF BULK-IMPURITY AND INTERFACE-CHARGE ON THE ELECTRON-MOBILITY IN MOSFETS, Solid-state electronics, 38(3), 1995, pp. 611-614
Authors:
LOPEZVILLANUEVA JA
MELCHOR I
GAMIZ F
BANQUERI J
JIMENEZTEJADA JA
Citation: Ja. Lopezvillanueva et al., A MODEL FOR THE QUANTIZED ACCUMULATION LAYER IN METAL-INSULATOR-SEMICONDUCTOR STRUCTURES, Solid-state electronics, 38(1), 1995, pp. 203-210
Authors:
GAMIZ F
LOPEZVILLANUEVA JA
BANQUERI J
CARCELLER JE
Citation: F. Gamiz et al., INFLUENCE OF THE OXIDE-CHARGE DISTRIBUTION PROFILE ON ELECTRON-MOBILITY IN MOSFETS, I.E.E.E. transactions on electron devices, 42(5), 1995, pp. 999-1004
Authors:
GAMIZ F
LOPEZVILLANUEVA JA
BANQUERI J
CARCELLER JE
CARTUJO P
Citation: F. Gamiz et al., UNIVERSALITY OF ELECTRON-MOBILITY CURVES IN MOSFETS - A MONTE-CARLO STUDY, I.E.E.E. transactions on electron devices, 42(2), 1995, pp. 258-265
Authors:
BANQUERI J
GAMIZ F
CARCELLER JE
CARTUJO P
LOPEZVILLANUEVA JA
Citation: J. Banqueri et al., INFLUENCE OF THE INTERFACE-STATE DENSITY ON THE ELECTRON-MOBILITY IN SILICON INVERSION-LAYERS, Journal of electronic materials, 22(9), 1993, pp. 1159-1163
Authors:
GAMIZ F
BANQUERI J
MELCHOR I
CARCELLER JE
CARTUJO P
LOPEZVILLANUEVA JA
Citation: F. Gamiz et al., AN ANALYTICAL EXPRESSION FOR PHONON-LIMITED ELECTRON-MOBILITY IN SILICON-INVERSION LAYERS, Journal of applied physics, 74(5), 1993, pp. 3289-3292
Authors:
PALMA A
JIMENEZTEIADA JA
BANQUERI J
CARTUJO P
CARCELLER JE
Citation: A. Palma et al., ACCURATE DETERMINATION OF MAJORITY THERMAL-CAPTURE CROSS-SECTIONS OF DEEP IMPURITIES IN P-N-JUNCTIONS, Journal of applied physics, 74(4), 1993, pp. 2605-2612
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