Citation: Ap. Baraban et al., NUMERICAL-SIMULATION OF ELECTRON-TRANSPORT IN MIS-STRUCTURES, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 7-8, 1998, pp. 35-42
Authors:
BARABAN AP
BULAVINOV VV
MUSTAFA NS
SOBCHENKO SA
Citation: Ap. Baraban et al., DEFECT-FORMING IN SI-SIO2 STRUCTURES IN P REBREAKDOWN ELECTRICAL FIELDS, Pis'ma v Zurnal tehniceskoj fiziki, 21(18), 1995, pp. 80-84
Authors:
BARABAN AP
BULAVINOV VV
DROZD VE
NIKIFOROVA IO
SERGIENKO MV
Citation: Ap. Baraban et al., ELECTROPHYSICAL CHARACTERISTICS OF AL-AL2 O3 STRUCTURES SYNTHESIZED BY THE MOLECULAR STRATIFYING TECHNIQUE, Zurnal tehniceskoj fiziki, 65(4), 1995, pp. 203-206
Citation: Ap. Baraban et al., PHOTOLUMINESCENCE OF SI3N4 LAYERS ON SILI CON SURFACE UNDER THE LASEREXCITATION, Zurnal tehniceskoj fiziki, 63(10), 1993, pp. 203-206