AAAAAA
Results:
1-22
|
Results: 22
Authors:
ALLEGRETTO EM
BARDWELL JA
Citation: Em. Allegretto et Ja. Bardwell, CHARACTERIZATION OF AS-GROWN AND ANNEALED THIN SIO2-FILMS FORMED IN 0.1 M HCL, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(4), 1996, pp. 2437-2442
Authors:
KASRAI M
LENNARD WN
BRUNNER RW
BANCROFT GM
BARDWELL JA
TAN KH
Citation: M. Kasrai et al., SAMPLING DEPTH OF TOTAL ELECTRON AND FLUORESCENCE MEASUREMENTS IN SI L-EDGE AND K-EDGE ABSORPTION-SPECTROSCOPY, Applied surface science, 99(4), 1996, pp. 303-312
Authors:
BARDWELL JA
LEBRUN L
EVANS RJ
CURRY DG
ABBOTT R
Citation: Ja. Bardwell et al., CLEANROOM COMPATIBLE ANODIZATION CELL FOR 150 MM SI WAFERS, Review of scientific instruments, 67(6), 1996, pp. 2346-2350
Authors:
SCHMUKI P
SPROULE GI
BARDWELL JA
LU ZH
GRAHAM MJ
Citation: P. Schmuki et al., THIN ANODIC OXIDES FORMED ON GAAS IN AQUEOUS-SOLUTIONS, Journal of applied physics, 79(9), 1996, pp. 7303-7311
Authors:
BARDWELL JA
DRAPER N
SCHMUKI P
Citation: Ja. Bardwell et al., GROWTH AND CHARACTERIZATION OF ANODIC OXIDES ON SI(100) FORMED IN 0.1M HYDROCHLORIC-ACID, Journal of applied physics, 79(11), 1996, pp. 8761-8769
Authors:
BARDWELL JA
ALLEGRETTO EM
PHILLIPS J
BUCHANAN M
DRAPER N
Citation: Ja. Bardwell et al., INFLUENCE OF THE INITIAL ELECTROCHEMICAL POTENTIAL ON THE GROWTH-MECHANISM AND PROPERTIES OF ANODIC OXIDES ON (100)SI, Journal of the Electrochemical Society, 143(9), 1996, pp. 2931-2938
Authors:
BARDWELL JA
EVANS RJ
DRAPER N
ROLFE SJ
NAEM A
SIMARDNORMANDIN M
Citation: Ja. Bardwell et al., DOPANT DEPTH PROFILING BY ANODIC SECTIONING USING 0.1 M HCL ELECTROLYTE, Journal of the Electrochemical Society, 143(11), 1996, pp. 256-258
Authors:
BARDWELL JA
ALLEGRETTO EM
MASON B
ERICKSON LE
CHAMPION HG
Citation: Ja. Bardwell et al., DOPANT DELINEATION ON SI(100) USING ANODIC-OXIDATION AND ATOMIC-FORCEMICROSCOPY, Applied physics letters, 68(20), 1996, pp. 2840-2842
Authors:
SCHMUKI P
BOHNI H
BARDWELL JA
Citation: P. Schmuki et al., IN-SITU CHARACTERIZATION OF ANODIC SILICON-OXIDE FILMS BY AC-IMPEDANCE MEASUREMENTS, Journal of the Electrochemical Society, 142(5), 1995, pp. 1705-1712
Authors:
DAVENPORT AJ
BARDWELL JA
VITUS CM
Citation: Aj. Davenport et al., IN-SITU XANES STUDY OF GALVANOSTATIC REDUCTION OF THE PASSIVE FILM ONIRON, Journal of the Electrochemical Society, 142(3), 1995, pp. 721-724
Authors:
BARDWELL JA
SCHMUKI P
SPROULE GI
LANDHEER D
MITCHELL DF
Citation: Ja. Bardwell et al., PHYSICAL AND ELECTRICAL CHARACTERIZATION OF THIN ANODIC OXIDES ON SI(100), Journal of the Electrochemical Society, 142(11), 1995, pp. 3933-3940
Authors:
GAO LJ
BARDWELL JA
LU ZH
GRAHAM MJ
NORTON PR
Citation: Lj. Gao et al., ANODIC PASSIVATION OF P-INP(100) IN (NH4)(2)S-X SOLUTION, Journal of the Electrochemical Society, 142(1), 1995, pp. 14-16
Authors:
LENNARD WN
MASSOUMI GR
MITCHELL IV
TANG HT
MITCHELL DF
BARDWELL JA
Citation: Wn. Lennard et al., MEASUREMENTS OF THIN OXIDE-FILMS OF SIO2 SI(100)/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 42-46
Authors:
MITCHELL DF
CLARK KB
BARDWELL JA
LENNARD WN
MASSOUMI GR
MITCHELL IV
Citation: Df. Mitchell et al., FILM THICKNESS MEASUREMENTS OF SIO2 BY XPS, Surface and interface analysis, 21(1), 1994, pp. 44-50
Authors:
CLARK KB
BARDWELL JA
BARIBEAU JM
Citation: Kb. Clark et al., PHYSICAL CHARACTERIZATION OF ULTRATHIN ANODIC SILICON-OXIDE FILMS, Journal of applied physics, 76(5), 1994, pp. 3114-3122
Authors:
LANDHEER D
BARDWELL JA
CLARK KB
Citation: D. Landheer et al., ELECTRICAL-PROPERTIES OF THIN ANODIC OXIDES FORMED ON SILICON IN AQUEOUS NH4OH SOLUTIONS, Journal of the Electrochemical Society, 141(5), 1994, pp. 1309-1312
Authors:
DAVENPORT AJ
SANSONE M
BARDWELL JA
ALDYKIEWICZ AJ
TAUBE M
VITUS CM
Citation: Aj. Davenport et al., IN-SITU MULTIELEMENT XANES STUDY OF FORMATION AND REDUCTION OF THE OXIDE FILM ON STAINLESS-STEEL, Journal of the Electrochemical Society, 141(1), 1994, pp. 120000006-120000008
Authors:
VANDERZWAN MLW
BARDWELL JA
SPROULE GI
GRAHAM MJ
Citation: Mlw. Vanderzwan et al., MECHANISM OF THE GROWTH OF NATIVE-OXIDE ON HYDROGEN PASSIVATED SILICON SURFACES, Applied physics letters, 64(4), 1994, pp. 446-447
Authors:
BARDWELL JA
CLARK KB
MITCHELL DF
BISAILLION DA
SPROULE GI
MACDOUGALL B
GRAHAM MJ
Citation: Ja. Bardwell et al., GROWTH AND CHARACTERIZATION OF ROOM-TEMPERATURE ANODIC SIO2-FILMS, Journal of the Electrochemical Society, 140(8), 1993, pp. 2135-2138
Authors:
GRAHAM MJ
BARDWELL JA
SPROULE GI
MITCHELL DF
MACDOUGALL BR
Citation: Mj. Graham et al., THE GROWTH AND STABILITY OF PASSIVE FILMS, Corrosion science, 35(1-4), 1993, pp. 13-18
Authors:
DAVENPORT AJ
ISAACS HS
BARDWELL JA
MACDOUGALL B
FRANKEL GS
SCHROTT AG
Citation: Aj. Davenport et al., IN-SITU STUDIES OF PASSIVE FILM CHEMISTRY USING X-RAY-ABSORPTION SPECTROSCOPY, Corrosion science, 35(1-4), 1993, pp. 19-25
Authors:
LANDHEER D
BARDWELL JA
SPROULE I
SCOTTTHOMAS J
KWOK W
LAU WM
Citation: D. Landheer et al., REDUCED INTERFACE STATE DENSITIES FOR REMOTE MICROWAVE PLASMA SILICON-NITRIDE, Canadian journal of physics, 70(10-11), 1992, pp. 795-798
Risultati:
1-22
|