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Results:
1-16
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Results: 16
Authors:
HORVATH ZJ
ADAM M
PINTER I
CVIKL B
KOROSAK D
MRDJEN T
TUYEN VV
MAKARO Z
DUCSO C
BARSONY I
Citation: Zj. Horvath et al., ANOMALOUS TEMPERATURE-DEPENDENCE OF SERIES RESISTANCE IN AG SI AND AL/SI SCHOTTKY JUNCTIONS/, Vacuum, 50(3-4), 1998, pp. 417-419
Authors:
MAKARO Z
BATTISTIG G
HORVATH ZE
LIKONEN J
BARSONY I
Citation: Z. Makaro et al., BACKSIDE ALUMINISATION EFFECTS ON SOLAR-CELL PERFORMANCE, Vacuum, 50(3-4), 1998, pp. 481-485
Authors:
REDEI L
FRIED M
BARSONY I
WALLINGA H
Citation: L. Redei et al., A MODIFIED LEARNING-STRATEGY FOR NEURAL NETWORKS TO SUPPORT SPECTROSCOPIC ELLIPSOMETRIC DATA EVALUATION, Thin solid films, 313, 1998, pp. 149-155
Authors:
FRIED M
WORMEESTER H
ZOETHOUT E
LOHNER T
POLGAR O
BARSONY I
Citation: M. Fried et al., IN-SITU SPECTROSCOPIC ELLIPSOMETRIC INVESTIGATION OF VACUUM ANNEALED AND OXIDIZED POROUS SILICON LAYERS, Thin solid films, 313, 1998, pp. 459-463
Authors:
HORVATH ZJ
ADAM M
DUCSO C
PINTER I
VANTUYEN V
BARSONY I
GOMBIA E
MOSCA R
MAKARO Z
Citation: Zj. Horvath et al., ELECTRICAL CHARACTERIZATION OF AL N-SI/P-SI SCHOTTKY JUNCTIONS PREPARED BY PLASMA IMMERSION IMPLANTATION/, Solid-state electronics, 42(2), 1998, pp. 221-228
Authors:
KOLEV SD
ADAM M
BARSONY I
VANDENBERG A
COBIANU C
KULINYI S
Citation: Sd. Kolev et al., MATHEMATICAL-MODELING OF A POROUS SILICON-BASED PELLISTOR-TYPE CATALYTIC FLAMMABLE-GAS SENSOR, Microelectronics, 29(4-5), 1998, pp. 235-239
Authors:
KROTKUS A
GRIGORAS K
PACEBUTAS V
BARSONY I
VAZSONYI E
FRIED M
SZLUFCIK J
NIJS J
LEVYCLEMENT C
Citation: A. Krotkus et al., EFFICIENCY IMPROVEMENT BY POROUS SILICON COATING OF MULTICRYSTALLINE SOLAR-CELLS, Solar energy materials and solar cells, 45(3), 1997, pp. 267-273
Authors:
DUCSO C
VAZSONYI E
ADAM M
SZABO I
BARSONY I
GARDENIERS JGE
VANDENBERG A
Citation: C. Ducso et al., POROUS SILICON BULK MICROMACHINING FOR THERMALLY ISOLATED MEMBRANE FORMATION, Sensors and actuators. A, Physical, 60(1-3), 1997, pp. 235-239
Authors:
UTRIAINEN M
LEHTO S
NIINISTO L
DUCSO C
KHANH NQ
HORVATH ZE
BARSONY I
PECZ B
Citation: M. Utriainen et al., POROUS SILICON HOST MATRIX FOR DEPOSITION BY ATOMIC LAYER EPITAXY, Thin solid films, 297(1-2), 1997, pp. 39-42
Authors:
DISNAR JR
MARQUIS F
ESPITALIE J
BARSONY I
DROUET S
GIOT D
Citation: Jr. Disnar et al., ORGANIC GEOCHEMISTRY AND RECONSTITUTION OF THERMAL AND TECTONOSEDIMENTARY HISTORY OF THE ARDECHE MARGIN (GPF PROGRAM - FRANCE), Bulletin de la Societe geologique de France, 168(1), 1997, pp. 73-81
Authors:
BOHER P
STEHLE JL
PIEL JP
FRIED M
LOHNER T
POLGAR O
KHANH NQ
BARSONY I
Citation: P. Boher et al., SPECTROSCOPIC ELLIPSOMETRY APPLIED TO THE DETERMINATION OF AN ION-IMPLANTATION DEPTH PROFILE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 160-168
Authors:
KHANH NQ
PINTER I
DUCSO C
ADAM M
SZILAGYI E
BARSONY I
ELSHERBINY MA
GYULAI J
Citation: Nq. Khanh et al., ION-BEAM ANALYSIS OF PLASMA IMMERSION IMPLANTED SILICON FOR SOLAR-CELL FABRICATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 259-262
Authors:
FRIED M
LOHNER T
POLGAR O
PETRIK P
VAZSONYI E
BARSONY I
PIEL JP
STEHLE JL
Citation: M. Fried et al., CHARACTERIZATION OF DIFFERENT POROUS SILICON STRUCTURES BY SPECTROSCOPIC ELLIPSOMETRY, Thin solid films, 276(1-2), 1996, pp. 223-227
Authors:
DUCSO C
KHANH NQ
HORVATH Z
BARSONY I
UTRIAINEN M
LEHTO S
NIEMINEN M
NIINISTO L
Citation: C. Ducso et al., DEPOSITION OF TIN OXIDE INTO POROUS SILICON BY ATOMIC LAYER EPITAXY, Journal of the Electrochemical Society, 143(2), 1996, pp. 683-687
Authors:
ADAM M
HORVATH ZJ
BARSONY I
SZOLGYEMY L
VAZSONYI E
VANTUYEN V
Citation: M. Adam et al., INVESTIGATION OF ELECTRICAL-PROPERTIES OF AU POROUS SI SI STRUCTURES/, Thin solid films, 255(1-2), 1995, pp. 266-268
Authors:
KLAPPE JGE
BARSONY I
LIEFTING JR
RYAN TW
Citation: Jge. Klappe et al., OPTIMIZATION OF ION-IMPLANTATION DAMAGE ANNEALING BY MEANS OF HIGH-RESOLUTION X-RAY-DIFFRACTION, Thin solid films, 235(1-2), 1993, pp. 189-197
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1-16
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