Authors: IBRAGIMOVA MI BARYSHEV NS PETUKHOV VY KHAIBULLIN IB

Citation: Mi. Ibragimova et al., EFFECT OF SUCCESSIVE IMPLANTATION OF AG-XTE CRYSTALS((CU+) AND XE+ IONS ON THE RECOMBINATION PROPERTIES OF CDXHG1), Semiconductors, 31(7), 1997, pp. 666-668

Authors: IBRAGIMOVA MI BARYSHEV NS PETUKHOV VY KHAIBULLIN IB

Citation: Mi. Ibragimova et al., PECULIARITIES OF CARRIER RECOMBINATION IN CDXHG1-XTE IMPLANTED CONSECUTIVELY WITH AG+ (CU+) AND XE+ IONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 471-474

Authors: BARYSHEV NS NESMELOVA IM

Citation: Ns. Baryshev et Im. Nesmelova, SEMICONDUCTOR-MATERIALS FOR IR OPTOELECTRONICS, Journal of optical technology, 63(11), 1996, pp. 804-813

Authors: BARYSHEV NS RYZHKOV VN ANDREEV VA

Citation: Ns. Baryshev et al., UNCOOLED CDHGTE PHOTORESISTORS SENSITIVE IN THE 3-5-MU-M WAVELENGTH REGION, Journal of optical technology, 63(11), 1996, pp. 814-816

Authors: IBRAGIMOVA MI BARYSHEV NS ZHIKHAREV VA KHAIBULLIN IB

Citation: Mi. Ibragimova et al., RECOMBINATION PROPERTIES OF IMPLANTED GROUP-I, GROUP-III, AND GROUP-VIII IONS AND THERMALLY ANNEALED CDXHG1-XTE CRYSTALS, Semiconductors, 29(10), 1995, pp. 917-920