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Results:
1-10
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Results: 10
Authors:
LANDHEER D
MASSON DP
BELKOUCH S
DAS SR
QUANCE T
LEBRUN L
HULSE JE
Citation: D. Landheer et al., BACK-SURFACE PASSIVATION OF POLYCRYSTALLINE CDSE THIN-FILM TRANSISTORS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(2), 1998, pp. 834-837
Authors:
BELKOUCH S
LANDHEER D
MASSON DP
DAS SR
QUANCE T
LEBRUN L
ROLFE SJ
Citation: S. Belkouch et al., EFFECTS OF INITIAL ANNEALING TREATMENTS ON THE ELECTRICAL CHARACTERISTICS AND STABILITY OF UNPASSIVATED CDSE THIN-FILM TRANSISTORS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(2), 1998, pp. 860-863
Authors:
SAYEDI SM
LANDSBERGER LM
KAHRIZI M
BELKOUCH S
LANDHEER D
Citation: Sm. Sayedi et al., ELECTRICAL CHARACTERIZATION OF THIN SIO2-FILMS ON SILICON CREATED BY ANODIC OXYGEN CORONA DISCHARGE PROCESSING, Journal of the Electrochemical Society, 145(8), 1998, pp. 2937-2943
Authors:
BELKOUCH S
NGUYEN TK
LANDSBERGER LM
AKTIK C
JEAN C
KAHRIZI M
Citation: S. Belkouch et al., INTERFACE STATES DISTRIBUTION IN ELECTRICAL STRESSED OXYNITRIDED GATE-OXIDE, Journal of the Electrochemical Society, 145(7), 1998, pp. 2489-2493
Authors:
LANDHEER D
RAGNARSSON LA
BELKOUCH S
Citation: D. Landheer et al., PHYSICAL AND ELECTRICAL ANALYSIS OF SILICON DIOXIDE THIN-FILMS PRODUCED BY ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION, Microelectronic engineering, 36(1-4), 1997, pp. 53-60
Authors:
NGUYEN TK
LANDSBERGER LM
BELKOUCH S
JEAN C
Citation: Tk. Nguyen et al., ELECTRICAL CHARACTERIZATION OF OXYNITRIDED GATE DIELECTRICS UNDER CONSTANT-CURRENT FOWLER-NORDHEIM STRESS, Journal of the Electrochemical Society, 144(9), 1997, pp. 3299-3304
Authors:
BELKOUCH S
AKTIK C
XU H
AMEZIANE EL
Citation: S. Belkouch et al., GAAS SURFACE CHEMICAL PASSIVATION BY (NH4)(2)S+SE AND THE EFFECT OF ANNEALING TREATMENTS, Solid-state electronics, 39(4), 1996, pp. 507-510
Authors:
AKTIK C
BELKOUCH S
Citation: C. Aktik et S. Belkouch, A SIMPLE VELOCITY MODEL FOR LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 67(6), 1995, pp. 869-871
Authors:
BELKOUCH S
JEAN C
AKTIK C
AMEZIANE EL
Citation: S. Belkouch et al., INTERFACE STATE BUILDUP BY HIGH-FIELD STRESSING IN VARIOUS METAL-OXIDE-SEMICONDUCTOR INSULATORS USING DEEP-LEVEL TRANSIENT SPECTROSCOPY, Applied physics letters, 67(4), 1995, pp. 530-532
Authors:
XU HQ
BELKOUCH S
AKTIK C
RASMUSSEN W
Citation: Hq. Xu et al., SE CHEMICAL PASSIVATION AND ANNEALING TREATMENT FOR GAAS SCHOTTKY DIODE, Applied physics letters, 66(16), 1995, pp. 2125-2127
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