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Results: 1-8 |
Results: 8
THE EFFECT OF AN ASYMMETRIC BAND OF LOCALIZED DEEP DONORS ON THE ELECTRONIC TRANSPORT OF HIGH-PURITY N-TYPE INP
Authors: BENZAQUEN R BENZAQUEN M LEONELLI R
Citation: R. Benzaquen et al., THE EFFECT OF AN ASYMMETRIC BAND OF LOCALIZED DEEP DONORS ON THE ELECTRONIC TRANSPORT OF HIGH-PURITY N-TYPE INP, Journal of applied physics, 82(11), 1997, pp. 5526-5531
PHOTOLUMINESCENCE TRANSIENT-DECAY STUDY OF THE DEEP-DONOR BOUND-EXCITON-EMISSION BAND IN HIGH-PURITY INP
Authors: BENZAQUEN R CHARBONNEAU S LEONELLI R ROTH AP
Citation: R. Benzaquen et al., PHOTOLUMINESCENCE TRANSIENT-DECAY STUDY OF THE DEEP-DONOR BOUND-EXCITON-EMISSION BAND IN HIGH-PURITY INP, Physical review. B, Condensed matter, 53(7), 1996, pp. 3627-3629
STRUCTURAL AND OPTICAL CHARACTERIZATION OF MONOLAYER INTERFACES IN GA0.47IN0.53AS INP MULTIPLE-QUANTUM WELLS GROWN BY CHEMICAL BEAM EPITAXY/
Authors: BENZAQUEN R ROTH AP LEONELLI R
Citation: R. Benzaquen et al., STRUCTURAL AND OPTICAL CHARACTERIZATION OF MONOLAYER INTERFACES IN GA0.47IN0.53AS INP MULTIPLE-QUANTUM WELLS GROWN BY CHEMICAL BEAM EPITAXY/, Journal of applied physics, 79(5), 1996, pp. 2640-2648
TEMPERATURE-DEPENDENCE OF THE FREE-EXCITON-EMISSION LINEWIDTH IN HIGH-PURITY INP
Authors: BENZAQUEN R LEONELLI R CHARBONNEAU S POOLE PJ ROTH AP
Citation: R. Benzaquen et al., TEMPERATURE-DEPENDENCE OF THE FREE-EXCITON-EMISSION LINEWIDTH IN HIGH-PURITY INP, Physical review. B, Condensed matter, 52(4), 1995, pp. 2273-2276
TEMPERATURE-DEPENDENCE OF THE SHALLOW-DONOR BOUND-EXCITON-EMISSION LINEWIDTH IN HIGH-PURITY INP
Authors: BENZAQUEN R LEONELLI R ROTH AP
Citation: R. Benzaquen et al., TEMPERATURE-DEPENDENCE OF THE SHALLOW-DONOR BOUND-EXCITON-EMISSION LINEWIDTH IN HIGH-PURITY INP, Physical review. B, Condensed matter, 52(3), 1995, pp. 1485-1488
EVIDENCE FROM ELECTRICAL-TRANSPORT AND PHOTOLUMINESCENCE SPECTROSCOPYOF A BAND OF LOCALIZED DEEP DONORS IN HIGH-PURITY N-TYPE INP GROWN BYCHEMICAL-BEAM EPITAXY
Authors: BENZAQUEN R BENZAQUEN M CHARBONNEAU S POOLE PJ RAO TS LACELLE C ROTH AP LEONELLI R
Citation: R. Benzaquen et al., EVIDENCE FROM ELECTRICAL-TRANSPORT AND PHOTOLUMINESCENCE SPECTROSCOPYOF A BAND OF LOCALIZED DEEP DONORS IN HIGH-PURITY N-TYPE INP GROWN BYCHEMICAL-BEAM EPITAXY, Physical review. B, Condensed matter, 50(23), 1994, pp. 16964-16972
ELECTRICAL, OPTICAL-PROPERTIES, AND SURFACE-MORPHOLOGY OF HIGH-PURITYINP GROWN BY CHEMICAL BEAM EPITAXY
Authors: RAO TS LACELLE C BENZAQUEN R ROLFE SJ CHARBONNEAU S BERGER PD ROTH AP STEINER T THEWALT MLW
Citation: Ts. Rao et al., ELECTRICAL, OPTICAL-PROPERTIES, AND SURFACE-MORPHOLOGY OF HIGH-PURITYINP GROWN BY CHEMICAL BEAM EPITAXY, Journal of applied physics, 76(9), 1994, pp. 5300-5308
ALLOY BROADENING IN PHOTOLUMINESCENCE SPECTRA OF GAXIN1-XASYP1-Y LATTICE-MATCHED TO INP
Authors: BENZAQUEN R CHARBONNEAU S SAWADSKY N ROTH AP LEONELLI R HOBBS L KNIGHT G
Citation: R. Benzaquen et al., ALLOY BROADENING IN PHOTOLUMINESCENCE SPECTRA OF GAXIN1-XASYP1-Y LATTICE-MATCHED TO INP, Journal of applied physics, 75(5), 1994, pp. 2633-2639
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