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Results: 1-8 |
Results: 8

Authors: FANG W HATTENDORF M CHUANG SL MINCH J CHANG CS BETHEA CG CHEN YK
Citation: W. Fang et al., ANALYSIS OF TEMPERATURE SENSITIVITY IN SEMICONDUCTOR-LASERS USING GAIN AND SPONTANEOUS EMISSION MEASUREMENTS, Applied physics letters, 70(7), 1997, pp. 796-798

Authors: PASSLACK M BETHEA CG HOBSON WS LOPATA J SCHUBERT EF ZYDZIK GJ NICHOLS DT DEJONG JF CHAKRABARTI UK DUTTA NK
Citation: M. Passlack et al., INFRARED MICROSCOPY STUDIES ON HIGH-POWER INGAAS-GAAS-INGAP LASERS WITH GA2O3 FACET COATINGS, IEEE journal of selected topics in quantum electronics, 1(2), 1995, pp. 110-116

Authors: FANG WCW BETHEA CG CHEN YK CHUANG SL
Citation: Wcw. Fang et al., LONGITUDINAL SPATIAL INHOMOGENEITIES IN HIGH-POWER SEMICONDUCTOR-LASERS, IEEE journal of selected topics in quantum electronics, 1(2), 1995, pp. 117-128

Authors: TANBUNEK T SCIORTINO PF SERGENT AM WECHT KW WISK P CHEN YK BETHEA CG SPUTZ SK
Citation: T. Tanbunek et al., DFB LASERS INTEGRATED WITH MACH-ZEHNDER OPTICAL MODULATOR FABRICATED BY SELECTIVE-AREA GROWTH MOVPE TECHNIQUE, IEEE photonics technology letters, 7(9), 1995, pp. 1019-1021

Authors: BETHEA CG
Citation: Cg. Bethea, SPATIALLY IMAGED INHOMOGENEOUS SPONTANEOUS EMISSION-SPECTRA OF HIGH-POWER IN INGAASP INP FABRY-PEROT LASERS/, Applied physics letters, 67(2), 1995, pp. 182-184

Authors: SCHATZ R BETHEA CG
Citation: R. Schatz et Cg. Bethea, STEADY-STATE MODEL FOR FACET HEATING LEADING TO THERMAL RUNAWAY IN SEMICONDUCTOR-LASERS, Journal of applied physics, 76(4), 1994, pp. 2509-2521

Authors: SCHUBERT EF PASSLACK M HONG M MANNERTS J OPILA RL PFEIFFER LN WEST KW BETHEA CG ZYDZIK GJ
Citation: Ef. Schubert et al., PROPERTIES OF AL2O3 OPTICAL COATINGS ON GAAS PRODUCED BY OXIDATION OFEPITAXIAL ALAS GAAS FILMS/, Applied physics letters, 64(22), 1994, pp. 2976-2978

Authors: BETHEA CG LEVINE BF ASOM MT LEIBENGUTH RE STAYT JW GLOGOVSKY KG MORGAN RA BLACKWELL JD PARRISH WJ
Citation: Cg. Bethea et al., LONG-WAVELENGTH INFRARED 128X128 ALXGA1-XAS GAAS QUANTUM-WELL INFRARED CAMERA AND IMAGING-SYSTEM/, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 1957-1963
Risultati: 1-8 |