Authors:
FANG W
HATTENDORF M
CHUANG SL
MINCH J
CHANG CS
BETHEA CG
CHEN YK
Citation: W. Fang et al., ANALYSIS OF TEMPERATURE SENSITIVITY IN SEMICONDUCTOR-LASERS USING GAIN AND SPONTANEOUS EMISSION MEASUREMENTS, Applied physics letters, 70(7), 1997, pp. 796-798
Authors:
PASSLACK M
BETHEA CG
HOBSON WS
LOPATA J
SCHUBERT EF
ZYDZIK GJ
NICHOLS DT
DEJONG JF
CHAKRABARTI UK
DUTTA NK
Citation: M. Passlack et al., INFRARED MICROSCOPY STUDIES ON HIGH-POWER INGAAS-GAAS-INGAP LASERS WITH GA2O3 FACET COATINGS, IEEE journal of selected topics in quantum electronics, 1(2), 1995, pp. 110-116
Citation: Wcw. Fang et al., LONGITUDINAL SPATIAL INHOMOGENEITIES IN HIGH-POWER SEMICONDUCTOR-LASERS, IEEE journal of selected topics in quantum electronics, 1(2), 1995, pp. 117-128
Citation: R. Schatz et Cg. Bethea, STEADY-STATE MODEL FOR FACET HEATING LEADING TO THERMAL RUNAWAY IN SEMICONDUCTOR-LASERS, Journal of applied physics, 76(4), 1994, pp. 2509-2521
Authors:
SCHUBERT EF
PASSLACK M
HONG M
MANNERTS J
OPILA RL
PFEIFFER LN
WEST KW
BETHEA CG
ZYDZIK GJ
Citation: Ef. Schubert et al., PROPERTIES OF AL2O3 OPTICAL COATINGS ON GAAS PRODUCED BY OXIDATION OFEPITAXIAL ALAS GAAS FILMS/, Applied physics letters, 64(22), 1994, pp. 2976-2978
Authors:
BETHEA CG
LEVINE BF
ASOM MT
LEIBENGUTH RE
STAYT JW
GLOGOVSKY KG
MORGAN RA
BLACKWELL JD
PARRISH WJ
Citation: Cg. Bethea et al., LONG-WAVELENGTH INFRARED 128X128 ALXGA1-XAS GAAS QUANTUM-WELL INFRARED CAMERA AND IMAGING-SYSTEM/, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 1957-1963