AAAAAA
Results:
1-7
|
Results: 7
Authors:
ALAWNEH I
SIMOEN E
BIESEMANS S
DEMEYER K
CLAEYS C
Citation: I. Alawneh et al., COMPARISON OF THE FREEZE-OUT EFFECT IN IN AND B-DOPED N-MOSFETS IN THE RANGE 4.2-300 K, Journal de physique. IV, 8(P3), 1998, pp. 3-8
Authors:
BIESEMANS S
HENDRIKS M
KUBICEK S
DEMEYER K
Citation: S. Biesemans et al., PRACTICAL ACCURACY ANALYSIS OF SOME EXISTING EFFECTIVE CHANNEL-LENGTHAND SERIES RESISTANCE EXTRACTION METHODS FOR MOSFETS, I.E.E.E. transactions on electron devices, 45(6), 1998, pp. 1310-1316
Authors:
IRVINE AC
DURRANI ZAK
AHMED H
BIESEMANS S
Citation: Ac. Irvine et al., SINGLE-ELECTRON EFFECTS IN HEAVILY-DOPED POLYCRYSTALLINE SILICON NANOWIRES, Applied physics letters, 73(8), 1998, pp. 1113-1115
Authors:
BIESEMANS S
KUBICEK S
DEMAYER K
Citation: S. Biesemans et al., TEST STRUCTURE TO INVESTIGATE THE SERIES RESISTANCE COMPONENTS OF SOURCE DRAIN STRUCTURE/, IEEE electron device letters, 18(10), 1997, pp. 477-479
Authors:
BIESEMANS S
DEMEYER KM
Citation: S. Biesemans et Km. Demeyer, DEFINING A CHARGE VECTOR AND ITS USE IN THE TREATMENT OF THE SHORT-CHANNEL EFFECT IN DEEP-SUBMICRON MOSFETS, Solid-state electronics, 41(1), 1997, pp. 95-102
Authors:
BIESEMANS S
KUBICEK S
DEMEYER K
Citation: S. Biesemans et al., USE OF INDIUM AND GALLIUM AS P-TYPE DOPANTS IN SI 0.1-MU-M MOSFETS, JPN J A P 1, 35(2B), 1996, pp. 1037-1040
Authors:
BIESEMANS S
KUBICEK S
DEMEYER K
Citation: S. Biesemans et al., NEW CURRENT-DEFINED THRESHOLD VOLTAGE MODEL FROM 2D POTENTIAL DISTRIBUTION CALCULATIONS IN MOSFETS, Solid-state electronics, 39(1), 1996, pp. 43-48
Risultati:
1-7
|