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Results: 1-12 |
Results: 12
STRAIN RELAXATION AT THE 3C-SIC SI INTERFACE - RAMAN-SCATTERING EXPERIMENTS/
Authors: FALKOVSKY LA BLUET JM CAMASSEL J
Citation: La. Falkovsky et al., STRAIN RELAXATION AT THE 3C-SIC SI INTERFACE - RAMAN-SCATTERING EXPERIMENTS/, Physical review. B, Condensed matter, 57(18), 1998, pp. 11283-11294
OPTICAL INVESTIGATION OF THICK 3C-SIC LAYERS DEPOSITED ON BULK SILICON BY CVD
Authors: BLUET JM CAMASSEL J FALKOVSKY LA LEYCURAS A
Citation: Jm. Bluet et al., OPTICAL INVESTIGATION OF THICK 3C-SIC LAYERS DEPOSITED ON BULK SILICON BY CVD, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1385-1387
COMPARATIVE INVESTIGATION OF ECR-RIE PATTERNS ON SI AND C FACES OF 6H-SIC USIAG A CF4 O-2 GAS-MIXTURE/
Authors: BONNOT R SYRKIN AL LEVEQUE G BLUET JM CAMASSEL J
Citation: R. Bonnot et al., COMPARATIVE INVESTIGATION OF ECR-RIE PATTERNS ON SI AND C FACES OF 6H-SIC USIAG A CF4 O-2 GAS-MIXTURE/, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1463-1466
OPTICAL AND ELECTRICAL-PROPERTIES OF 2-DIMENSIONAL ELECTRON-GAS IN GAN ALGAN HETEROSTRUCTURES/
Authors: ALAUSE H KNAP W AZEMA SC BLUET JM SADOWSKI ML HUANT S YOUNG J KHAN MA CHEN Q SHUR M
Citation: H. Alause et al., OPTICAL AND ELECTRICAL-PROPERTIES OF 2-DIMENSIONAL ELECTRON-GAS IN GAN ALGAN HETEROSTRUCTURES/, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 79-83
COMPARISON OF THE ELECTRICAL AND OPTICAL-PROPERTIES OF 3C-SIC ON SOI FROM DIFFERENT ORIGIN
Authors: BLUET JM CONTRERASAZEMA S CAMASSEL J ROBERT JL DICIOCCIO L REICHERT W LOSSY R OBERMEIER E STOEMENOS J
Citation: Jm. Bluet et al., COMPARISON OF THE ELECTRICAL AND OPTICAL-PROPERTIES OF 3C-SIC ON SOI FROM DIFFERENT ORIGIN, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 152-155
SURFACE-BARRIER HEIGHT IN METAL-SIC STRUCTURES OF 6H, 4H AND 3C POLYTYPES
Authors: SYRKIN AL BLUET JM BASTIDE G BRETAGNON T LEBEDEV AA RASTEGAEVA MG SAVKINA NS CHELNOKOV VE
Citation: Al. Syrkin et al., SURFACE-BARRIER HEIGHT IN METAL-SIC STRUCTURES OF 6H, 4H AND 3C POLYTYPES, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 236-239
LUMINESCENCE DETERMINATION OF DONOR CONCENTRATION IN N-TYPE 6H-SIC
Authors: DYAKONOVA NV BLUET JM SYRKIN AL CONTRERASAZEMA S
Citation: Nv. Dyakonova et al., LUMINESCENCE DETERMINATION OF DONOR CONCENTRATION IN N-TYPE 6H-SIC, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 304-307
REACTIVE ION ETCHING OF 6H-SIC IN AN ECR PLASMA OF CF4-O-2 MIXTURES USING BOTH NI AND AL MASKS
Authors: SYRKIN AL BLUET JM CAMASSEL J BONNOT R
Citation: Al. Syrkin et al., REACTIVE ION ETCHING OF 6H-SIC IN AN ECR PLASMA OF CF4-O-2 MIXTURES USING BOTH NI AND AL MASKS, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 374-378
STRAIN-FLUCTUATION EFFECT ON RAMAN-SPECTRA
Authors: FALKOVSKY LA BLUET JM CAMASSEL J
Citation: La. Falkovsky et al., STRAIN-FLUCTUATION EFFECT ON RAMAN-SPECTRA, Physical review. B, Condensed matter, 55(22), 1997, pp. 14697-14700
GAS-SOURCE MOLECULAR-BEAM EPITAXY OF BETA-SIC ON SI SUBSTRATES
Authors: ZEKENTES K BECOURT N ANDROULIDAKI M TSAGARAKI K STOEMENOS J BLUET JM CAMASSEL J PASCUAL J
Citation: K. Zekentes et al., GAS-SOURCE MOLECULAR-BEAM EPITAXY OF BETA-SIC ON SI SUBSTRATES, Applied surface science, 102, 1996, pp. 22-27
EDGE-ON MICRO-RAMAN ASSESSMENT OF TRIGONAL MODES IN PARTIALLY ORDEREDGAINP2
Authors: MESTRES N ALSINA F PASCUAL J BLUET JM CAMASSEL J GENG C SCHOLZ F
Citation: N. Mestres et al., EDGE-ON MICRO-RAMAN ASSESSMENT OF TRIGONAL MODES IN PARTIALLY ORDEREDGAINP2, Physical review. B, Condensed matter, 54(24), 1996, pp. 17754-17758
THE CYCLOTRON-RESONANCE EFFECTIVE-MASS OF 2-DIMENSIONAL ELECTRONS CONFINED AT THE GAN ALGAN INTERFACE/
Authors: KNAP W ALAUSE H BLUET JM CAMASSEL J YOUNG J KHAN MA CHEN Q HUANT S SHUR M
Citation: W. Knap et al., THE CYCLOTRON-RESONANCE EFFECTIVE-MASS OF 2-DIMENSIONAL ELECTRONS CONFINED AT THE GAN ALGAN INTERFACE/, Solid state communications, 99(3), 1996, pp. 195-199
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