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Results: 1-12 |
Results: 12
QUANTUM TRANSPORT SIMULATION OF THE DOS FUNCTION, SELF-CONSISTENT FIELDS AND MOBILITY IN MOS INVERSION-LAYERS
Authors: VASILESKA D ELDRIDGE T BORDONE P FERRY DK
Citation: D. Vasileska et al., QUANTUM TRANSPORT SIMULATION OF THE DOS FUNCTION, SELF-CONSISTENT FIELDS AND MOBILITY IN MOS INVERSION-LAYERS, VLSI design (Print), 6(1-4), 1998, pp. 21-25
WIGNER PATHS FOR ELECTRONS INTERACTING WITH PHONONS
Authors: PASCOLI M BORDONE P BRUNETTI R JACOBONI C
Citation: M. Pascoli et al., WIGNER PATHS FOR ELECTRONS INTERACTING WITH PHONONS, Physical review. B, Condensed matter, 58(7), 1998, pp. 3503-3506
USING THE WIGNER FUNCTION FOR QUANTUM TRANSPORT IN DEVICE SIMULATION
Authors: NEDJALKOV M DIMOV I BORDONE P BRUNETTI R JACOBONI C
Citation: M. Nedjalkov et al., USING THE WIGNER FUNCTION FOR QUANTUM TRANSPORT IN DEVICE SIMULATION, Mathematical and computer modelling, 25(12), 1997, pp. 33-53
WIGNER FUNCTION FOR OPEN SYSTEMS WITH ELECTRON-PHONON INTERACTION
Authors: BORDONE P ABRAMO A BRUNETTI R PASCOLI M JACOBONI C
Citation: P. Bordone et al., WIGNER FUNCTION FOR OPEN SYSTEMS WITH ELECTRON-PHONON INTERACTION, Physica status solidi. b, Basic research, 204(1), 1997, pp. 303-305
QUANTUM TRANSPORT CALCULATIONS FOR SILICON INVERSION-LAYERS IN MOS STRUCTURES
Authors: VASILESKA D BORDONE P ELDRIDGE T FERRY DK
Citation: D. Vasileska et al., QUANTUM TRANSPORT CALCULATIONS FOR SILICON INVERSION-LAYERS IN MOS STRUCTURES, Physica. B, Condensed matter, 227(1-4), 1996, pp. 333-335
COLLISION-DURATION TIME FOR OPTICAL-PHONON EMISSION IN SEMICONDUCTORS
Authors: BORDONE P VASILESKA D FERRY DK
Citation: P. Bordone et al., COLLISION-DURATION TIME FOR OPTICAL-PHONON EMISSION IN SEMICONDUCTORS, Physical review. B, Condensed matter, 53(7), 1996, pp. 3846-3855
CALCULATION OF THE AVERAGE INTERFACE FIELD IN INVERSION-LAYERS USING ZERO-TEMPERATURE GREENS-FUNCTION FORMALISM
Authors: VASILESKA D BORDONE P ELDRIDGE T FERRY DK
Citation: D. Vasileska et al., CALCULATION OF THE AVERAGE INTERFACE FIELD IN INVERSION-LAYERS USING ZERO-TEMPERATURE GREENS-FUNCTION FORMALISM, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1841-1847
HOT-PHONON EFFECT ON NOISE AND DIFFUSION IN GAAS
Authors: BORDONE P REGGIANI L VARANI L KUHN T
Citation: P. Bordone et al., HOT-PHONON EFFECT ON NOISE AND DIFFUSION IN GAAS, Semiconductor science and technology, 9(5), 1994, pp. 623-626
PHONON EFFECTS ON ELECTRONIC TRANSPORT IN SINGLE ALXGA1-XAS GAAS HETEROJUNCTIONS
Authors: BORDONE P LUGLI P GULIA M
Citation: P. Bordone et al., PHONON EFFECTS ON ELECTRONIC TRANSPORT IN SINGLE ALXGA1-XAS GAAS HETEROJUNCTIONS, Semiconductor science and technology, 9(5), 1994, pp. 820-823
EFFECT OF HALF-SPACE AND INTERFACE PHONONS ON THE TRANSPORT-PROPERTIES OF ALXGA1-XAS GAAS SINGLE HETEROSTRUCTURES/
Authors: BORDONE P LUGLI P
Citation: P. Bordone et P. Lugli, EFFECT OF HALF-SPACE AND INTERFACE PHONONS ON THE TRANSPORT-PROPERTIES OF ALXGA1-XAS GAAS SINGLE HETEROSTRUCTURES/, Physical review. B, Condensed matter, 49(12), 1994, pp. 8178-8190
INFLUENCE OF HOT PHONONS ON ELECTRONIC NOISE IN GAAS
Authors: BORDONE P VARANI L REGGIANI L ROTA L KUHN T
Citation: P. Bordone et al., INFLUENCE OF HOT PHONONS ON ELECTRONIC NOISE IN GAAS, Applied physics letters, 63(8), 1993, pp. 1107-1109
INTERACTION OF ELECTRONS WITH INTERFACE PHONONS IN GAAS ALAS AND GAAS/ALGAAS HETEROSTRUCTURES/
Authors: LUGLI P BORDONE P MOLINARI E RUCKER H DEPAULA AM MACIEL AC RYAN JF SHAYEGAN M
Citation: P. Lugli et al., INTERACTION OF ELECTRONS WITH INTERFACE PHONONS IN GAAS ALAS AND GAAS/ALGAAS HETEROSTRUCTURES/, Semiconductor science and technology, 7(3B), 1992, pp. 116-119
Risultati: 1-12 |