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Results: 1-12 |
Results: 12
NANOCRYSTALLIZATION IN FE73.5SI13.5B9CU1NB1X2 (X = NB, MO AND V) ALLOYS STUDIED BY X-RAY SYNCHROTRON-RADIATION
Authors: BORREGO JM CONDE CF MILLAN M CONDE A CAPITAN MJ JOULAUD JL
Citation: Jm. Borrego et al., NANOCRYSTALLIZATION IN FE73.5SI13.5B9CU1NB1X2 (X = NB, MO AND V) ALLOYS STUDIED BY X-RAY SYNCHROTRON-RADIATION, Nanostructured materials, 10(4), 1998, pp. 575-583
AN IN-SITU SYNCHROTRON STUDY OF NANOCRYSTALLIZATION IN (FE, CR)-SI-B(-CU-NB) ALLOYS
Authors: CONDE CF MILLAN M BORREGO JM CONDE A CAPITAN MJ JOULAUD JL
Citation: Cf. Conde et al., AN IN-SITU SYNCHROTRON STUDY OF NANOCRYSTALLIZATION IN (FE, CR)-SI-B(-CU-NB) ALLOYS, Philosophical magazine letters, 78(3), 1998, pp. 221-227
X-RAY-ABSORPTION STUDIES OF A FINEMET ALLOY
Authors: BORREGO JM CONDE CF CONDE A CHADWICK AV MORRISON G
Citation: Jm. Borrego et al., X-RAY-ABSORPTION STUDIES OF A FINEMET ALLOY, Journal of non-crystalline solids, 234, 1998, pp. 352-357
NANOCRYSTALLIZATION BEHAVIOR OF FESIBCU(NBX) ALLOYS
Authors: BORREGO JM CONDE A
Citation: Jm. Borrego et A. Conde, NANOCRYSTALLIZATION BEHAVIOR OF FESIBCU(NBX) ALLOYS, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 226, 1997, pp. 663-667
MOSSBAUER STUDY OF THE NANOCRYSTALLIZATION OF THE AMORPHOUS SYSTEM FE73.5SI13.5B9CU1NB1X2 WITH X = NB, MO, V AND ZR
Authors: BORREGO JM RODRIGUEZ VAP CONDE A
Citation: Jm. Borrego et al., MOSSBAUER STUDY OF THE NANOCRYSTALLIZATION OF THE AMORPHOUS SYSTEM FE73.5SI13.5B9CU1NB1X2 WITH X = NB, MO, V AND ZR, Hyperfine interactions, 110(1-2), 1997, pp. 1-6
MODULATION SPECTROSCOPY CHARACTERIZATION OF INP AND GAAS SOLAR-CELLS
Authors: RODRIGUES RG BORREGO JM
Citation: Rg. Rodrigues et Jm. Borrego, MODULATION SPECTROSCOPY CHARACTERIZATION OF INP AND GAAS SOLAR-CELLS, Solid-state electronics, 41(12), 1997, pp. 1827-1835
HIGH-FREQUENCY RESPONSE OF CAPACITORS FABRICATED FROM FINE-GRAIN BATIO3 THIN-FILMS
Authors: SINGH PK COCHRANE S LIU WT CHEN K KNORR DB BORREGO JM RYMASZEWSKI EJ LU TM
Citation: Pk. Singh et al., HIGH-FREQUENCY RESPONSE OF CAPACITORS FABRICATED FROM FINE-GRAIN BATIO3 THIN-FILMS, Applied physics letters, 66(26), 1995, pp. 3683-3685
MEASUREMENT OF THE SHEET RESISTANCE OF DOPED LAYERS IN SEMICONDUCTORSBY MICROWAVE REFLECTION
Authors: BHIMNATHWALA H BORREGO JM
Citation: H. Bhimnathwala et Jm. Borrego, MEASUREMENT OF THE SHEET RESISTANCE OF DOPED LAYERS IN SEMICONDUCTORSBY MICROWAVE REFLECTION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 395-398
FREQUENCY-DOMAIN (1KHZ-40GHZ) CHARACTERIZATION OF THIN-FILMS FOR MULTICHIP-MODULE PACKAGING TECHNOLOGY
Authors: LIU WT COCHRANE S WU XM SINGH PK ZHANG X KNORR DB MCDONALD JF RYMASZEWSKI EJ BORREGO JM LU TM
Citation: Wt. Liu et al., FREQUENCY-DOMAIN (1KHZ-40GHZ) CHARACTERIZATION OF THIN-FILMS FOR MULTICHIP-MODULE PACKAGING TECHNOLOGY, Electronics Letters, 30(2), 1994, pp. 117-118
LOW-TEMPERATURE FABRICATION OF AMORPHOUS BATIO3 THIN-FILM BYPASS CAPACITORS
Authors: LIU WT COCHRANE S LAKSHMIKUMAR ST KNORR DB RYMASZEWSKI EJ BORREGO JM LU TM
Citation: Wt. Liu et al., LOW-TEMPERATURE FABRICATION OF AMORPHOUS BATIO3 THIN-FILM BYPASS CAPACITORS, IEEE electron device letters, 14(7), 1993, pp. 320-322
NONDESTRUCTIVE CHARACTERIZATION OF HGCDTE USING PHOTOINDUCED MICROWAVE REFLECTION
Authors: SPADA EJ RAO VR BHAT I BORREGO JM
Citation: Ej. Spada et al., NONDESTRUCTIVE CHARACTERIZATION OF HGCDTE USING PHOTOINDUCED MICROWAVE REFLECTION, Semiconductor science and technology, 8(6), 1993, pp. 936-940
IMPROVED AL INP SCHOTTKY BARRIERS BY COIMPLANTATION OF BE/P/
Authors: TYAGI R CHOW TP BORREGO JM PISARCZYK KA
Citation: R. Tyagi et al., IMPROVED AL INP SCHOTTKY BARRIERS BY COIMPLANTATION OF BE/P/, Applied physics letters, 63(5), 1993, pp. 651-653
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