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Results:
1-8
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Results: 8
Authors:
VESCAN A
EBERT W
BORST TH
KOHN E
Citation: A. Vescan et al., ELECTRICAL CHARACTERIZATION OF DIAMOND RESISTORS ETCHED BY RIE, DIAMOND AND RELATED MATERIALS, 5(6-8), 1996, pp. 747-751
Authors:
GLUCHE P
WOLTER SD
BORST TH
EBERT W
VESCAN A
KOHN E
Citation: P. Gluche et al., HIGHLY RECTIFYING AU-CONTACTS ON DIAMOND-ON-SILICON SUBSTRATE, IEEE electron device letters, 17(6), 1996, pp. 270-272
Authors:
BORST TH
WEIS O
Citation: Th. Borst et O. Weis, BORON-DOPED HOMOEPITAXIAL DIAMOND LAYERS - FABRICATION, CHARACTERIZATION, AND ELECTRONIC APPLICATIONS, Physica status solidi. a, Applied research, 154(1), 1996, pp. 423-444
Authors:
WOLTER SD
BORST TH
VESCAN A
KOHN E
Citation: Sd. Wolter et al., THE NUCLEATION OF HIGHLY ORIENTED DIAMOND ON SILICON VIA AN ALTERNATING-CURRENT SUBSTRATE BIAS, Applied physics letters, 68(25), 1996, pp. 3558-3560
Authors:
BORST TH
WEIS O
Citation: Th. Borst et O. Weis, ELECTRICAL CHARACTERIZATION OF HOMOEPITAXIAL DIAMOND FILMS DOPED WITHB, P, LI AND NA DURING CRYSTAL-GROWTH, DIAMOND AND RELATED MATERIALS, 4(7), 1995, pp. 948-953
Authors:
BORST TH
STROBEL S
WEIS O
Citation: Th. Borst et al., HIGH-TEMPERATURE DIAMOND P-N-JUNCTION - B-DOPED HOMOEPITAXIAL LAYER ON N-DOPED SUBSTRATE, Applied physics letters, 67(18), 1995, pp. 2651-2653
Authors:
BORST TH
MUNZINGER PC
WEIS O
Citation: Th. Borst et al., CHARACTERIZATION OF UNDOPED AND DOPED HOMOEPITAXIAL DIAMOND LAYERS PRODUCED BY MICROWAVE PLASMA CVD, DIAMOND AND RELATED MATERIALS, 3(4-6), 1994, pp. 515-519
Authors:
EBERT W
VESCAN A
BORST TH
KOHN E
Citation: W. Ebert et al., HIGH-CURRENT P P+-DIAMOND SCHOTTKY DIODE, IEEE electron device letters, 15(8), 1994, pp. 289-291
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