Citation: X. Hue et al., GATE RECESSING OPTIMIZATION OF GAAS AL0.22GA0.78AS HETEROJUNCTION FIELD-EFFECT TRANSISTOR USING CITRIC-ACID HYDROGEN-PEROXIDE AMMONIUM HYDROXIDE FOR POWER APPLICATIONS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2675-2679
Authors:
TRASSAERT S
BOUDART B
PIOTROWICZ S
CROSNIER Y
Citation: S. Trassaert et al., BROMINE METHANOL WET CHEMICAL ETCHING OF VIA HOLES FOR INP MICROWAVE DEVICES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(2), 1998, pp. 561-564
Authors:
BOUDART B
GAQUIERE C
TRASSAERT S
THERON D
SPLINGART B
LIPKA M
KOHN E
Citation: B. Boudart et al., SMALL-SIGNAL AND LARGE-SIGNAL MEASUREMENTS OF LOW-TEMPERATURE GAAS-FETS, Microwave and optical technology letters, 12(2), 1996, pp. 57-59
Authors:
WESTPHALEN R
BOUDART B
THERON D
WALLART X
DRUELLE Y
CROSNIER Y
Citation: R. Westphalen et al., TEMPERATURE-MEASUREMENTS OF LT GAAS DIODES, Materials science & engineering. B, Solid-state materials for advanced technology, 22(1), 1993, pp. 78-81
Citation: B. Boudart et al., RAMAN INVESTIGATION OF THE PHOTOCARRIER PROPERTIES IN BOTH UNDOPED AND FE-DOPED INP SUBSTRATES, Materials science & engineering. B, Solid-state materials for advanced technology, 20(1-2), 1993, pp. 109-112