AAAAAA
Results:
1-16
|
Results: 16
Authors:
ABRAMOF E
DASILVA AF
SERNELIUS BE
DESOUZA JP
BOUDINOV H
Citation: E. Abramof et al., METAL-NONMETAL TRANSITION AND RESISTIVITY OF SILICON IMPLANTED WITH BISMUTH, Journal of materials research, 12(3), 1997, pp. 641-645
Authors:
DOSSANTOS JHR
GRANDE PL
BOUDINOV H
BEHAR M
STOLL R
KLATT C
KALBITZER S
Citation: Jhr. Dossantos et al., ELECTRONIC STOPPING POWER OF B-10 CHANNELED INTO THE SI[100] AXIAL DIRECTION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 107-111
Authors:
BOUDINOV H
DESOUZA JP
Citation: H. Boudinov et Jp. Desouza, DAMAGE ACCUMULATION DURING B-11(-12(+) AND N-14(+) IMPLANTATIONS IN SI-1(), C), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 122(2), 1997, pp. 293-297
Authors:
DESOUZA JP
DANILOV I
BOUDINOV H
Citation: Jp. Desouza et al., THERMAL-STABILITY OF THE ELECTRICAL ISOLATION IN N-TYPE GAAS - EFFECTS OF DAMAGE AND CARRIER CONCENTRATIONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 122(1), 1997, pp. 51-54
Authors:
DOSSANTOS JHR
GRANDE PL
BEHAR M
BOUDINOV H
SCHIWIETZ G
Citation: Jhr. Dossantos et al., ANGULAR-DEPENDENCE OF THE ELECTRONIC-ENERGY LOSS OF 800-KEV HE IONS ALONG THE SI[100] DIRECTION, Physical review. B, Condensed matter, 55(7), 1997, pp. 4332-4342
Authors:
DOSSANTOS JHR
BEHAR M
GRANDE PL
BOUDINOV H
STOLL R
KLATT C
KALBITZER S
Citation: Jhr. Dossantos et al., ELECTRONIC STOPPING POWER OF B-10 IN SI IN RANDOM AND [100]CHANNELINGDIRECTIONS, Physical review. B, Condensed matter, 55(20), 1997, pp. 13651-13657
Authors:
ABRAMOF E
DASILVA AF
SERNELIUS BE
DESOUZA JP
BOUDINOV H
Citation: E. Abramof et al., TRANSPORT-PROPERTIES OF SILICON IMPLANTED WITH BISMUTH, Physical review. B, Condensed matter, 55(15), 1997, pp. 9584-9589
Authors:
DESOUZA JP
DANILOV I
BOUDINOV H
Citation: Jp. Desouza et al., THERMAL-STABILITY OF THE ELECTRICAL ISOLATION IN N-TYPE GALLIUM-ARSENIDE LAYERS IRRADIATED WITH H, HE, AND B IONS, Journal of applied physics, 81(2), 1997, pp. 650-655
Authors:
DESOUZA JP
BOUDINOV H
SWART JW
Citation: Jp. Desouza et al., RAPID THERMAL ANNEALING OF MG-IMPLANTED GAAS( AND P+ CO), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 117(4), 1996, pp. 403-407
Authors:
DASILVA AF
SERNELIUS BE
DESOUZA JP
BOUDINOV H
Citation: Af. Dasilva et al., ELECTRICAL-RESISTIVITY OF BISMUTH IMPLANTED INTO SILICON, Journal of applied physics, 79(7), 1996, pp. 3453-3455
Authors:
DESOUZA JP
DANILOV I
BOUDINOV H
Citation: Jp. Desouza et al., ELECTRICAL ISOLATION IN GAAS BY LIGHT-ION IRRADIATION - THE ROLE OF ANTISITE DEFECTS, Applied physics letters, 68(4), 1996, pp. 535-537
Authors:
DOSSANTOS JHR
GRANDE PL
BOUDINOV H
BEHAR M
STOLL R
KLATT C
KALBITZER S
Citation: Jhr. Dossantos et al., ELECTRONIC STOPPING POWER OF (100)-AXIAL-CHANNELED HE IONS IN SI CRYSTALS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 51-54
Authors:
SANTOS DL
DESOUZA JP
AMARAL L
BOUDINOV H
Citation: Dl. Santos et al., ION-BEAM MIXING OF FE THIN-FILM AND SI SUBSTRATE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 103(1), 1995, pp. 56-59
Authors:
DESOUZA JP
BOUDINOV H
Citation: Jp. Desouza et H. Boudinov, METASTABLE ACCEPTOR CENTERS IN BORON-IMPLANTED SILICON, Applied physics letters, 66(23), 1995, pp. 3173-3175
Authors:
DESOUZA JP
BOUDINOV H
FICHTNER PFP
Citation: Jp. Desouza et al., ENHANCED DAMAGE ACCUMULATION IN CARBON-IMPLANTED SILICON, Applied physics letters, 64(26), 1994, pp. 3596-3597
Authors:
DESOUZA JP
BOUDINOV H
Citation: Jp. Desouza et H. Boudinov, ELECTRICAL ACTIVATION OF BORON COIMPLANTED WITH CARBON IN A SILICON SUBSTRATE, Journal of applied physics, 74(11), 1993, pp. 6599-6602
Risultati:
1-16
|