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Results: 1-8 |
Results: 8

Authors: SCHUERMEYER F CERNY C BOZADA C FANG ZQ LOOK DC
Citation: F. Schuermeyer et al., CHARGE STORAGE EFFECTS IN PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTORS, JPN J A P 1, 36(3B), 1997, pp. 1330-1334

Authors: VIA D BOZADA C CERNY C DESALVO G DETTMER R EBEL J GILLESPIE J JENKINS T NAKANO K PETTIFORD C QUACH T SEWELL J
Citation: D. Via et al., SAFE SOLVENT RESIST PROCESS FOR SUB-QUARTER MICRON T-GATES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2916-2920

Authors: QUACH T JENKINS T BARRETTE J BOZADA C CERNY C DESALVO G DETTMER R EBEL J GILLESPIE J HAVASY C ITO C NAKANO K PETTIFORD C SEWELL J VIA D ANHOLT R
Citation: T. Quach et al., EMITTER UTILIZATION IN HETEROJUNCTION BIPOLAR-TRANSISTORS, Solid-state electronics, 41(9), 1997, pp. 1303-1308

Authors: ANHOLT R BOZADA C DESALVO G DETTMER R EBEL J GILLESPIE J JENKINS T HAVASY C ITO C NAKANO K PETTIFORD C QUACH T SEWELL J VIA D
Citation: R. Anholt et al., BASE AND COLLECTOR RESISTANCES IN HETEROJUNCTION BIPOLAR-TRANSISTORS, Solid-state electronics, 41(11), 1997, pp. 1739-1743

Authors: BOZADA C CERNY C DESALVO G DETTMER R EBEL J GILLESPIE J HAVASY C JENKINS T ITO C NAKANO K PETTIFORD C QUACH T SEWELL J VIA GD ANHOLT R
Citation: C. Bozada et al., THERMAL MANAGEMENT OF MICROWAVE-POWER HETEROJUNCTION BIPOLAR-TRANSISTORS, Solid-state electronics, 41(10), 1997, pp. 1667-1673

Authors: JENKINS T BOZADA C DETTMER R SEWELL J VIA D BARRETTE J EBEL J DESALVO G HAVASY C LIOU L QUACH T GILLESPIE J PETTIFORD C ITO C NAKANO K ANHOLT R
Citation: T. Jenkins et al., COMPARISON OF THERMAL-SHUNT AND FLIP-CHIP HBT THERMAL IMPEDANCES - COMMENT ON NOVEL HBT WITH REDUCED THERMAL IMPEDANCE, IEEE microwave and guided wave letters, 6(7), 1996, pp. 268-269

Authors: SEWELL J LIOU LL BARLAGE D BARRETTE J BOZADA C DETTMER R FITCH R JENKINS T LEE R MACK M TROMBLEY G WATSON P
Citation: J. Sewell et al., THERMAL CHARACTERIZATION OF THERMALLY-SHUNTED HETEROJUNCTION BIPOLAR-TRANSISTORS, IEEE electron device letters, 17(1), 1996, pp. 19-21

Authors: ANHOLT R BOZADA C DETTMER R VIA D JENKINS T BARRETTE J EBEL J HAVASY C SEWELL J QUACH T
Citation: R. Anholt et al., MEASURING, MODELING, AND MINIMIZING CAPACITANCES IN HETEROJUNCTION BIPOLAR-TRANSISTORS, Solid-state electronics, 39(7), 1996, pp. 961-963
Risultati: 1-8 |