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Results: 1-14 |
Results: 14
SPECTRAL CHARACTERISTICS OF A-SI-H C-SI HETEROSTRUCTURES/
Authors: GALL S HIRSCHAUER R KOLTER M BRAUNIG D
Citation: S. Gall et al., SPECTRAL CHARACTERISTICS OF A-SI-H C-SI HETEROSTRUCTURES/, Solar energy materials and solar cells, 49(1-4), 1997, pp. 157-162
THERMAL AND OPTICAL STABILITY OF INJECTED CHARGE IN STACKED DIELECTRIC LAYERS
Authors: WRANA M SCHMIDT M BRAUNIG D
Citation: M. Wrana et al., THERMAL AND OPTICAL STABILITY OF INJECTED CHARGE IN STACKED DIELECTRIC LAYERS, Semiconductor science and technology, 12(4), 1997, pp. 369-374
PHOTOLUMINESCENCE OF CUINS2 THIN-FILMS AND SOLAR-CELLS MODIFIED BY POSTDEPOSITION TREATMENTS
Authors: TOPPER K BRUNS J SCHEER R WEBER M WEIDINGER A BRAUNIG D
Citation: K. Topper et al., PHOTOLUMINESCENCE OF CUINS2 THIN-FILMS AND SOLAR-CELLS MODIFIED BY POSTDEPOSITION TREATMENTS, Applied physics letters, 71(4), 1997, pp. 482-484
TRAPPING KINETICS OF THIN-LAYERS INFLUENCED BY TUNNELING
Authors: SCHARF S SCHMIDT M BRAUNIG D
Citation: S. Scharf et al., TRAPPING KINETICS OF THIN-LAYERS INFLUENCED BY TUNNELING, Materials chemistry and physics, 43(2), 1996, pp. 187-190
HYDROGEN IMPLANTATION AND DIFFUSION IN SILICON AND SILICON DIOXIDE
Authors: FINK D KRAUSER J NAGENGAST D MURPHY TA ERXMEIER J PALMETSHOFER L BRAUNIG D WEIDINGER A
Citation: D. Fink et al., HYDROGEN IMPLANTATION AND DIFFUSION IN SILICON AND SILICON DIOXIDE, Applied physics A: Materials science & processing, 61(4), 1995, pp. 381-388
TEMPERATURE-DEPENDENT POSITIVE OXIDE CHARGE ANNEALING BY ELECTRON-TUNNELING
Authors: SCHARF S SCHMIDT M BRAUNIG D
Citation: S. Scharf et al., TEMPERATURE-DEPENDENT POSITIVE OXIDE CHARGE ANNEALING BY ELECTRON-TUNNELING, Semiconductor science and technology, 10(5), 1995, pp. 586-591
HYDROGEN PEAK CONCENTRATION IN THE SIO2 SI TRANSITION ZONE AS A FUNCTION OF OXIDE FILM THICKNESS/
Authors: MASER K KRAUSER J BERGER H BRAUNIG D
Citation: K. Maser et al., HYDROGEN PEAK CONCENTRATION IN THE SIO2 SI TRANSITION ZONE AS A FUNCTION OF OXIDE FILM THICKNESS/, Microelectronic engineering, 28(1-4), 1995, pp. 129-132
HYDROGEN CONCENTRATION AND INTERFACE STATE GENERATION DUE TO IONIZING-RADIATION IN ALUMINUM AND POLYSILICON GATE MOS DEVICES
Authors: SCHARF S KRAUSER J STORRING M WULF F BRAUNIG D
Citation: S. Scharf et al., HYDROGEN CONCENTRATION AND INTERFACE STATE GENERATION DUE TO IONIZING-RADIATION IN ALUMINUM AND POLYSILICON GATE MOS DEVICES, Microelectronic engineering, 28(1-4), 1995, pp. 353-356
MEASUREMENT AND ANALYSIS OF HYDROGEN DEPTH PROFILES IN MOS-STRUCTURESBY USING THE N-15 NUCLEAR-REACTION METHOD
Authors: KRAUSER J WULF F BRAUNIG D
Citation: J. Krauser et al., MEASUREMENT AND ANALYSIS OF HYDROGEN DEPTH PROFILES IN MOS-STRUCTURESBY USING THE N-15 NUCLEAR-REACTION METHOD, Journal of non-crystalline solids, 187, 1995, pp. 264-269
ATOMIC DISPLACEMENT AND TOTAL IONIZING DOSE DAMAGE IN SEMICONDUCTORS
Authors: BRAUNIG D WULF F
Citation: D. Braunig et F. Wulf, ATOMIC DISPLACEMENT AND TOTAL IONIZING DOSE DAMAGE IN SEMICONDUCTORS, Radiation physics and chemistry, 43(1-2), 1994, pp. 105-127
COMPARISON OF THE GENERATION OF INTERFACE STATES IN MOS STRUCTURES DUE TO CO-60 AND VUV IRRADIATION ACCOMPANIED WITH PHOTOINJECTION OF ELECTRONS
Authors: SCHARF S SCHMIDT M WULF F BRAUNIG D
Citation: S. Scharf et al., COMPARISON OF THE GENERATION OF INTERFACE STATES IN MOS STRUCTURES DUE TO CO-60 AND VUV IRRADIATION ACCOMPANIED WITH PHOTOINJECTION OF ELECTRONS, IEEE transactions on nuclear science, 41(3), 1994, pp. 460-465
IMPROVED EFFICIENCY OF CRYSTALLINE SILICON SOLAR-CELLS DUE TO HE+ IMPLANTATION
Authors: BRUNS J SEIFERT W WAWER P WINNICKE H BRAUNIG D WAGEMANN HG
Citation: J. Bruns et al., IMPROVED EFFICIENCY OF CRYSTALLINE SILICON SOLAR-CELLS DUE TO HE+ IMPLANTATION, Applied physics letters, 64(20), 1994, pp. 2700-2702
STUDY OF HYDROGEN INCORPORATION IN MOS-STRUCTURES AFTER VARIOUS PROCESS STEPS USING NUCLEAR-REACTION ANALYSIS (NRA)
Authors: KRAUSER J WULF F BRIERE MA STEIGER J BRAUNIG D
Citation: J. Krauser et al., STUDY OF HYDROGEN INCORPORATION IN MOS-STRUCTURES AFTER VARIOUS PROCESS STEPS USING NUCLEAR-REACTION ANALYSIS (NRA), Microelectronic engineering, 22(1-4), 1993, pp. 65-68
ANNEALING OF IRRADIATION-INDUCED POSITIVE OXIDE CHARGES IN SIO2 SI-MOS STRUCTURES AS DESCRIBED BY HYDROGEN REACTIONS/
Authors: WANG Y FAHRNER WR BRAUNIG D
Citation: Y. Wang et al., ANNEALING OF IRRADIATION-INDUCED POSITIVE OXIDE CHARGES IN SIO2 SI-MOS STRUCTURES AS DESCRIBED BY HYDROGEN REACTIONS/, Microelectronic engineering, 22(1-4), 1993, pp. 223-226
Risultati: 1-14 |