AAAAAA

   
Results: 1-7 |
Results: 7
AC CHARACTERIZATION OF THE P-INVERTED BURIED-CHANNEL HETEROSTRUCTURE FET AND ITS SUITABILITY FOR COMPLEMENTARY ELECTRONICS
Authors: KIELY PA DOCTER DP VANG TA TAYLOR GW EVALDSSON PA CLAISSE PR TELL B BROWNGOEBELER KF
Citation: Pa. Kiely et al., AC CHARACTERIZATION OF THE P-INVERTED BURIED-CHANNEL HETEROSTRUCTURE FET AND ITS SUITABILITY FOR COMPLEMENTARY ELECTRONICS, IEE proceedings. Circuits, devices and systems, 142(2), 1995, pp. 105-108
A WDM RECEIVER PHOTONIC INTEGRATED-CIRCUIT WITH NET ON-CHIP GAIN
Authors: VERDIELL JM KOCH TL MILLER BI YOUNG MG KOREN U STORZ F BROWNGOEBELER KF
Citation: Jm. Verdiell et al., A WDM RECEIVER PHOTONIC INTEGRATED-CIRCUIT WITH NET ON-CHIP GAIN, IEEE photonics technology letters, 6(8), 1994, pp. 960-962
PARALLEL OPTICAL INTERCONNECTIONS USING SURFACE-EMITTING MICROLASERS AND A HYBRID IMAGE SYSTEM
Authors: JAHNS J SAUER F TELL B BROWNGOEBELER KF FELDBLUM AY NIJANDER CR TOWNSEND WP
Citation: J. Jahns et al., PARALLEL OPTICAL INTERCONNECTIONS USING SURFACE-EMITTING MICROLASERS AND A HYBRID IMAGE SYSTEM, Optics communications, 109(3-4), 1994, pp. 328-337
SUBMICROMETER GATE LENGTH SCALING OF INVERSION CHANNEL HETEROJUNCTIONFIELD-EFFECT TRANSISTOR
Authors: KIELY PA VANG TA MICOVIC M LEPORE A TAYLOR GW MALIK R DOCTER DP EVALDSSON PA CLAISSE PR BROWNGOEBELER KF STORZ F
Citation: Pa. Kiely et al., SUBMICROMETER GATE LENGTH SCALING OF INVERSION CHANNEL HETEROJUNCTIONFIELD-EFFECT TRANSISTOR, Electronics Letters, 30(6), 1994, pp. 529-531
LOW-TEMPERATURE CONTINUOUS OPERATION OF VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH WAVELENGTH BELOW 700 NM
Authors: TELL B BROWNGOEBELER KF LEIBENGUTH RE
Citation: B. Tell et al., LOW-TEMPERATURE CONTINUOUS OPERATION OF VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH WAVELENGTH BELOW 700 NM, IEEE photonics technology letters, 5(6), 1993, pp. 637-639
COMPLEMENTARY TRANSISTOR TECHNOLOGY FOR USE IN OPTOELECTRONIC INTEGRATED-CIRCUITS
Authors: KIELY PA TAYLOR GW DOCTER DP EVALDSSON PA VANG TA TELL B BROWNGOEBELER KF
Citation: Pa. Kiely et al., COMPLEMENTARY TRANSISTOR TECHNOLOGY FOR USE IN OPTOELECTRONIC INTEGRATED-CIRCUITS, IEE proceedings. Part G. Circuits, devices and systems, 140(4), 1993, pp. 279-284
MICROCAVITY ENHANCED VERTICAL-CAVITY LIGHT-EMITTING-DIODES
Authors: KELLER U JACOBOVITZVESELKA GR CUNNINGHAM JE JAN WY TELL B BROWNGOEBELER KF LIVESCU G
Citation: U. Keller et al., MICROCAVITY ENHANCED VERTICAL-CAVITY LIGHT-EMITTING-DIODES, Applied physics letters, 62(24), 1993, pp. 3085-3087
Risultati: 1-7 |