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Results:
1-13
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Results: 13
Authors:
YOUNG SM
BROZEL MR
MOORE CJL
Citation: Sm. Young et al., NONCONTACTING SPATIALLY-RESOLVED MEASUREMENTS OF FERMI ENERGY AND PHOTOCONDUCTIVITY IN SEMIINSULATING UNDOPED GAAS AND INP-FE, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 203-207
Authors:
BERWICK K
BROZEL MR
BUTTAR CM
SELLIN P
YOUNG SM
Citation: K. Berwick et al., ASSESSMENT OF SI GAAS PARTICLE DETECTORS, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 330-333
Authors:
BROZEL MR
Citation: Mr. Brozel, IRRADIATION DAMAGE IN GAAS PARTICLE DETECTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 395(1), 1997, pp. 88-93
Authors:
BERWICK K
BROZEL MR
BUTTAR CM
POONI JS
SELLIN PJ
YOUNG SM
Citation: K. Berwick et al., CORRELATION OF THE CHARGE COLLECTION EFFICIENCY OF GAAS PARTICLE DETECTORS WITH MATERIAL PROPERTIES, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 380(1-2), 1996, pp. 46-49
Authors:
TUZEMEN S
LEBERRE C
CORBEL C
BROZEL MR
YILDIRIM M
Citation: S. Tuzemen et al., OBSERVATIONS OF 2 SEPARABLE PHOTOQUENCHING PHENOMENA IN LIGHTLY N-TYPE BULK GAAS BY OPTICAL-ABSORPTION, HALL-EFFECT, AND POSITRON-ANNIHILATION, Applied physics letters, 69(23), 1996, pp. 3462-3464
Authors:
BROZEL MR
CORBEL C
Citation: Mr. Brozel et C. Corbel, VACANCIES AND DOMINANT ELECTRICALLY ACTIVE DEFECTS IN BULK SEMIINSULATING GAAS, Journal de physique. IV, 5(C1), 1995, pp. 63-72
Authors:
BROZEL MR
Citation: Mr. Brozel, ANALYSIS OF SEMIINSULATING GAAS AND THE ROLE OF POSITRON-ANNIHILATION, Applied physics A: Materials science & processing, 60(6), 1995, pp. 537-540
Authors:
SELLIN PJ
BUTTAR CM
MANOLOPOULOS S
BERWICK K
BROZEL MR
COWPERTHWAITE M
Citation: Pj. Sellin et al., CHARGE COLLECTION RESPONSE OF SI GAAS P-I-N DETECTORS, IEEE transactions on nuclear science, 42(4), 1995, pp. 247-253
Authors:
LEBERRE C
CORBEL C
MIH R
BROZEL MR
TUZEMEN S
KUISMA S
SAARINEN K
HAUTOJARVI P
FORNARI R
Citation: C. Leberre et al., NEAR-BAND-EDGE ABSORPTION AND POSITRON TRAPPING UNDER ILLUMINATION INSEMIINSULATING GAAS - ROLE OF AS VACANCIES, Applied physics letters, 66(19), 1995, pp. 2534-2536
Authors:
LEBERRE C
CORBEL C
BROZEL MR
KUISMA S
SAARINEN K
HAUTOJARVI P
Citation: C. Leberre et al., CORRELATION BETWEEN THE EL2 DEFECT AND THE METASTABLE VACANCY OBSERVED BY POSITRON-ANNIHILATION IN SI GAAS, Journal of physics. Condensed matter, 6(48), 1994, pp. 120000759-120000763
Authors:
BROZEL MR
TUZEMEN S
Citation: Mr. Brozel et S. Tuzemen, ANALYSIS OF IR ABSORPTION MAPPING OF DEFECTS IN LIQUID-ENCAPSULATED CZOCHRALSKI GAAS, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 130-133
Authors:
BERWICK K
BROZEL MR
BUTTAR CM
COWPERTHWAITE M
SELLIN P
HOU Y
Citation: K. Berwick et al., IMAGING OF HIGH-FIELD REGIONS IN SEMIINSULATING GAAS UNDER BIAS, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 485-487
Authors:
SYKES DE
CHEW A
HALL DD
CRAPPER PA
GRANT IR
LAMB MSM
LUNN M
BROZEL MR
DAVIES P
Citation: De. Sykes et al., IDENTIFICATION AND QUANTIFICATION OF CU CONTAMINATION ON GAAS-SURFACES, Surface and interface analysis, 21(1), 1994, pp. 51-55
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