ACNP - Italian Periodicals Catalogue

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Results: 1-11 |

Results: 11

THERMOSTABLE TI AU/PT/TI SCHOTTKY CONTACTS TO N-TYPE 4H-SIC/

Authors: KASSAMAKOVA L KAKANAKOVAGEORGIEVA A KAKANAKOV R MARINOVA T KASSAMAKOV I DJAMBOVA T NOBLANC O ARNODO C CASSETTE S BRYLINSKI C

Citation: L. Kassamakova et al., THERMOSTABLE TI AU/PT/TI SCHOTTKY CONTACTS TO N-TYPE 4H-SIC/, Semiconductor science and technology, 13(9), 1998, pp. 1025-1030

SILICON-CARBIDE FOR MICROWAVE-POWER APPLICATIONS

Authors: BRYLINSKI C

Citation: C. Brylinski, SILICON-CARBIDE FOR MICROWAVE-POWER APPLICATIONS, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1405-1413

TEM STUDY OF NI AND NI2SI OHMIC CONTACTS TO SIC

Authors: PECZ B RADNOCZI G CASSETTE S BRYLINSKI C ARNODO C NOBLANC O

Citation: B. Pecz et al., TEM STUDY OF NI AND NI2SI OHMIC CONTACTS TO SIC, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1428-1431

MICROWAVE-POWER MESFET ON 4H-SIC

Authors: NOBLANC O CHARTIER E ARNODO C BRYLINSKI C

Citation: O. Noblanc et al., MICROWAVE-POWER MESFET ON 4H-SIC, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1508-1511

NICKEL-BASED OHMIC CONTACTS ON SIC

Authors: MARINOVA T KAKANAKOVAGEORGIEVA A KRASTEV V KAKANAKOV R NESHEV M KASSAMAKOVA L NOBLANC O ARNODO C CASSETTE S BRYLINSKI C PECZ B RADNOCZI G VINCZE G

Citation: T. Marinova et al., NICKEL-BASED OHMIC CONTACTS ON SIC, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 223-226

INTERFACE CHEMISTRY OF A TI AU/PT/TI/SIC STRUCTURE/

Authors: KAKANAKOVAGEORGIEVA A MARINOVA T NOBLANC O ARNODO C CASSETTE S BRYLINSKI C

Citation: A. Kakanakovageorgieva et al., INTERFACE CHEMISTRY OF A TI AU/PT/TI/SIC STRUCTURE/, Applied surface science, 121, 1997, pp. 208-212

GAINP GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION FOR VOLTAGE-CONTROLLED OSCILLATORS AND POWER-AMPLIFIER MICROWAVE MONOLITHIC INTEGRATED-CIRCUITS/

Authors: DIFORTEPOISSON MA BRYLINSKI C DELAGE SL BLANCK H FLORIOT D CASSETTE S CHARTIER E PONS D HUBER A

Citation: Ma. Difortepoisson et al., GAINP GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION FOR VOLTAGE-CONTROLLED OSCILLATORS AND POWER-AMPLIFIER MICROWAVE MONOLITHIC INTEGRATED-CIRCUITS/, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 242-247

LP-MOCVD GROWN GAINP GAAS HBTS FOR VCOS AND POWER-AMPLIFIER MMICS/

Authors: DIFORTEPOISSON MA BRYLINSKI C DELAGE SL BLANCK H FLORIOT D CASSETTE S CHARTIER E PONS D

Citation: Ma. Difortepoisson et al., LP-MOCVD GROWN GAINP GAAS HBTS FOR VCOS AND POWER-AMPLIFIER MMICS/, Journal of crystal growth, 145(1-4), 1994, pp. 983-985

BAND-OFFSET OF GAAS-GAINP HETEROJUNCTIONS

Authors: FENG SL KRYNICKI J DONCHEV V BOURGOIN JC DIFORTEPOISSON M BRYLINSKI C DELAGE S BLANCK H ALAYA S

Citation: Sl. Feng et al., BAND-OFFSET OF GAAS-GAINP HETEROJUNCTIONS, Semiconductor science and technology, 8(12), 1993, pp. 2092-2096

OBSERVATION OF A 2-DIMENSIONAL HOLE GAS IN A GAINP GAAS HETEROJUNCTION/

Authors: PINKSE PWH MAUDE DK PORTAL JC DIFORTEPOISSON MA BRYLINSKI C

Citation: Pwh. Pinkse et al., OBSERVATION OF A 2-DIMENSIONAL HOLE GAS IN A GAINP GAAS HETEROJUNCTION/, Solid state communications, 87(2), 1993, pp. 127-129

DEFECTS IN EPITAXIAL SI-DOPED GAINP

Authors: KRYNICKI J ZAIDI MA ZAZOUI M BOURGOIN JC DIFORTEPOISSON M BRYLINSKI C DELAGE SL BLANCK H

Citation: J. Krynicki et al., DEFECTS IN EPITAXIAL SI-DOPED GAINP, Journal of applied physics, 74(1), 1993, pp. 260-266

Risultati: 1-11 |