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Results:
1-9
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Results: 9
Authors:
BUCHIN EY
LAPTEV NA
PROKAZNIKOV AV
RUD NA
SVETOVOI VB
CHIRKOV AN
Citation: Ey. Buchin et al., ELECTROLUMINESCENCE AND CURRENT-VOLTAGE CHARACTERISTICS OF N-TYPE POROUS SILICON STRUCTURES, Technical physics letters, 23(6), 1997, pp. 445-447
Authors:
BUCHIN EY
PROKAZNIKOV AV
Citation: Ey. Buchin et Av. Prokaznikov, DYNAMICS OF AN ELECTROLYTE-N-TYPE SILICON SYSTEM DURING ANODIZATION IN HYDROFLUORIC-ACID SOLUTIONS, Technical physics letters, 23(3), 1997, pp. 169-171
Authors:
BUCHIN EY
PROKAZNIKOV AV
Citation: Ey. Buchin et Av. Prokaznikov, CONTROL OF THE MORPHOLOGY OF N-TYPE POROUS SILICON, Technical physics letters, 23(3), 1997, pp. 244-245
Authors:
PROKAZNIKOV AV
BUCHIN EY
Citation: Av. Prokaznikov et Ey. Buchin, CONTROLLABLE FORMATION OF POROUS STRUCTURES ON N-TYPE SILICON, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 5-6, 1997, pp. 47-52
Authors:
PROKAZNIKOV AV
BUCHIN EY
Citation: Av. Prokaznikov et Ey. Buchin, CHARACTER OF DYNAMICS IN THE ELECTROLYTE N-TYPE SILICON SYSTEM DURINGANODIZATION IN HF SOLUTIONS, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 5-6, 1997, pp. 117-122
Authors:
BABANOV YE
BUCHIN EY
PROKAZNIKOV AV
SVETOVOY VB
Citation: Ye. Babanov et al., DIFFERENT LOCATION OF PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE IN N-TYPE POROUS SILICON, Physica status solidi. a, Applied research, 161(1), 1997, pp. 1-2
Authors:
BUCHIN EY
CHURILOV AB
PROKAZNIKOV AV
Citation: Ey. Buchin et al., DIFFERENT MORPHOLOGY ASPECTS OF N-TYPE POROUS SILICON, Applied surface science, 102, 1996, pp. 431-435
Authors:
BUCHIN EY
POSTNIKOV AV
PROKAZNIKOV AV
SVETOVOI VB
CHURILOV AB
Citation: Ey. Buchin et al., EFFECT OF TREATMENT MODES ON MORPHOLOGY A ND OPTICAL-PROPERTIES OF N-TYPE POROUS SILICON, Pis'ma v Zurnal tehniceskoj fiziki, 21(1), 1995, pp. 60-65
Authors:
ZHURAVLEV KS
STEPINA NP
SHAMIRZAEV TS
BUCHIN EY
MOKROUSOV NE
Citation: Ks. Zhuravlev et al., KINETICS OF THE PHOTOLUMINESCENCE INTENSIFICATION AND DECAY OF POROUSSILICON IN CW LASER-LIGHT, Semiconductors, 28(3), 1994, pp. 295-298
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1-9
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