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Results:
1-15
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Results: 15
Authors:
KHACHEPURIDZE A
IVANOV VY
GODLEWSKI M
REGINSKI K
BUGAJSKI M
Citation: A. Khachepuridze et al., TIME-RESOLVED MICROWAVE SPECTROSCOPY OF HIGH-ELECTRON-MOBILITY GAAS ALGAAS STRUCTURES/, Acta Physica Polonica. A, 94(3), 1998, pp. 387-391
Authors:
OCHALSKI TJ
ZUK J
REGINSKI K
BUGAJSKI M
Citation: Tj. Ochalski et al., PHOTOREFLECTANCE STUDIES OF INGAAS GAAS/ALGAAS SINGLE-QUANTUM-WELL LASER STRUCTURES/, Acta Physica Polonica. A, 94(3), 1998, pp. 463-467
Authors:
RADOMSKA D
RATAJCZAK J
REGINSKI K
BUGAJSKI M
Citation: D. Radomska et al., HIGH-RESISTIVITY ALGAAS GROWN BY LOW-TEMPERATURE MBE, Acta Physica Polonica. A, 94(3), 1998, pp. 492-496
FERMI-EDGE SINGULARITY IN LUMINESCENCE SPECTRA OF P-TYPE MODULATION-DOPED ALGAAS GAAS QUANTUM-WELLS/
Authors:
BUGAJSKI M
GODLEWSKI M
REGINSKI K
HOLTZ PO
BERGMAN JP
MONEMAR B
Citation: M. Bugajski et al., FERMI-EDGE SINGULARITY IN LUMINESCENCE SPECTRA OF P-TYPE MODULATION-DOPED ALGAAS GAAS QUANTUM-WELLS/, Acta Physica Polonica. A, 94(2), 1998, pp. 265-270
Authors:
LEPKOWSKI SP
BUGAJSKI M
Citation: Sp. Lepkowski et M. Bugajski, THEORETICAL-ANALYSIS OF OPTICAL GAIN IN QUANTUM-WELL LASERS INCLUDINGVALENCE-BAND MIXING EFFECT, Acta Physica Polonica. A, 92(5), 1997, pp. 903-907
Authors:
GODLEWSKI M
HOLTZ PO
BERGMAN JP
MONEMAR B
REGINSKI K
BUGAJSKI M
GOLDYS EM
TANSLEY TL
Citation: M. Godlewski et al., INTERISLAND EXCITON MIGRATION AND ENHANCED BOUND EXCITON RECOMBINATION IN AN ALGAAS GAAS QUANTUM-WELL STRUCTURE GROWN BY MOLECULAR-BEAM EPITAXY WITHOUT GROWTH INTERRUPTIONS AT INTERFACES/, Semiconductor science and technology, 12(11), 1997, pp. 1416-1421
Authors:
BUGAJSKI M
HINTERSTEININGER H
NIEVOLL J
STUMPF W
Citation: M. Bugajski et al., LINING THE TOP OF A CYCLONE WITH FREE-FLOWING CASTABLE REFRACTORY IN THE GMUNDEN CEMENT WORKS, ZKG INTERNATIONAL, 49(11), 1996, pp. 623-627
Authors:
GODLEWSKI M
HOLZ PO
BERGMAN JP
MONEMAR B
REGINSKI K
BUGAJSKI M
Citation: M. Godlewski et al., INTER-ISLAND ENERGY-TRANSFER IN ALGAAS GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY/, Acta Physica Polonica. A, 90(5), 1996, pp. 1007-1011
Authors:
BUGAJSKI M
REGINSKI K
GODLEWSKI M
WESOLOWSKI M
HOLTZ PO
BUYANOV AV
MONEMAR B
Citation: M. Bugajski et al., FERMI-EDGE SINGULARITY IN EXCITONIC SPECTRA OF MODULATION-DOPED ALGAAS GAAS QUANTUM-WELLS/, Acta Physica Polonica. A, 90(4), 1996, pp. 751-754
Authors:
KANIEWSKA M
REGINSKI K
MUSZALSKI J
KRYNSKA D
LITKOWIEC A
KANIEWSKI J
WESOLOWSKI M
BUGAJSKI M
Citation: M. Kaniewska et al., LOW-THRESHOLD ROOM-TEMPERATURE ALGAAS GAAS GRIN SCH SQW LASERS GROWN BY MBE/, Acta Physica Polonica. A, 90(4), 1996, pp. 847-850
Authors:
GODLEWSKI M
BERGMAN JP
HOLTZ PO
MONEMAR B
BUGAJSKI M
REGINSKI K
KANIEWSKA M
Citation: M. Godlewski et al., INFLUENCE OF GROWTH-CONDITIONS ON EXCITON PROPERTIES IN THIN QUANTUM-WELLS OF GAAS ALGAAS/, Acta Physica Polonica. A, 88(4), 1995, pp. 719-722
Authors:
KANIEWSKA M
REGINSKI K
KANIEWSKI J
MUSZALSKI J
ORNOCH L
ADAMCZEWSKA J
MARCZEWSKI J
BUGAJSKI M
MIZERA E
Citation: M. Kaniewska et al., IDENTIFICATION OF RESIDUAL IMPURITIES IN SI-DOPED MBE GROWN GAAS, Acta Physica Polonica. A, 88(4), 1995, pp. 775-778
Authors:
BUGAJSKI M
GODLEWSKI M
BERGMAN JP
MONEMAR B
REGINSKI K
KANIEWSKA M
Citation: M. Bugajski et al., EXCITON DYNAMICS IN THIN ALGAAS GAAS QUANTUM-WELLS GROWN BY MBE/, Thin solid films, 267(1-2), 1995, pp. 84-88
Authors:
KATCKI J
BUGAJSKI M
Citation: J. Katcki et M. Bugajski, TRANSMISSION ELECTRON-MICROSCOPY STUDY OF THE FORMATION OF A CONTAMINATION LAYER ON THE SURFACE OF POROUS SILICON, Journal of materials science. Materials in electronics, 5(5), 1994, pp. 280-283
Authors:
BUGAJSKI M
EDELMAN P
ORNOCH J
WESOLOWSKI M
LEWANDOWSKI W
KUCHARSKI K
Citation: M. Bugajski et al., WHOLE WAFER ASSESSMENT OF ELECTRONIC MATERIALS BY SCANNING PHOTOLUMINESCENCE AND SURFACE PHOTOVOLTAGE, Materials science & engineering. B, Solid-state materials for advanced technology, 20(1-2), 1993, pp. 186-189
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