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Results: 1-15 |
Results: 15
MOVPE GROWTH OF HIGHLY STRAINED INGAAS GAAS QUANTUM-WELLS/
Authors: BUGGE F ZEIMER U SATO M WEYERS M TRANKLE G
Citation: F. Bugge et al., MOVPE GROWTH OF HIGHLY STRAINED INGAAS GAAS QUANTUM-WELLS/, Journal of crystal growth, 183(4), 1998, pp. 511-518
X-RAY STUDY OF LATERAL STRAIN AND COMPOSITION MODULATION IN AN ALGAASOVERLAYER INDUCED BY A GAAS LATERAL SURFACE GRATING
Authors: DAROWSKI N PIETSCH U ZEIMER U SMIRNITZKI V BUGGE F
Citation: N. Darowski et al., X-RAY STUDY OF LATERAL STRAIN AND COMPOSITION MODULATION IN AN ALGAASOVERLAYER INDUCED BY A GAAS LATERAL SURFACE GRATING, Journal of applied physics, 84(3), 1998, pp. 1366-1370
MONOMODE EMISSION AT 350 MW AND HIGH-RELIABILITY WITH INGAAS ALGAAS (LAMBDA=1020 NM) RIDGE-WAVE-GUIDE LASER-DIODES/
Authors: BEISTER G BUGGE F ERBERT G MAEGE J RESSEL P SEBASTIAN J THIES A WENZEL H
Citation: G. Beister et al., MONOMODE EMISSION AT 350 MW AND HIGH-RELIABILITY WITH INGAAS ALGAAS (LAMBDA=1020 NM) RIDGE-WAVE-GUIDE LASER-DIODES/, Electronics Letters, 34(8), 1998, pp. 778-779
A PHYSICS-BASED MODEL OF HYPERABRUPT VARACTORS FOR NONLINEAR TRANSMISSION-LINE APPLICATIONS
Authors: HEYMANN P DOERNER R BUGGE F LANGER T PRINZLER H
Citation: P. Heymann et al., A PHYSICS-BASED MODEL OF HYPERABRUPT VARACTORS FOR NONLINEAR TRANSMISSION-LINE APPLICATIONS, International journal of microwave and millimeter-wave computer-aided engineering, 7(4), 1997, pp. 278-288
INTERDIFFUSION IN INGAAS GAAS AND INGAAS/GAASP QUANTUM-WELLS/
Authors: OSTER A BUGGE F GRAMLICH S PROCOP M ZEIMER U WEYERS M
Citation: A. Oster et al., INTERDIFFUSION IN INGAAS GAAS AND INGAAS/GAASP QUANTUM-WELLS/, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 20-23
CRYSTALLINE PERFECTION IN GAINASP GAAS LASER STRUCTURES WITH GAINP ORALGAAS CLADDING LAYERS/
Authors: RECHENBERG I KNAUER A BUGGE F RICHTER U ERBERT G VOGEL K KLEIN A ZEIMER U WEYERS M
Citation: I. Rechenberg et al., CRYSTALLINE PERFECTION IN GAINASP GAAS LASER STRUCTURES WITH GAINP ORALGAAS CLADDING LAYERS/, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 368-372
HIGH-RESOLUTION X-RAY-DIFFRACTION INVESTIGATION OF CRYSTAL PERFECTIONAND RELAXATION OF GAAS INGAAS/GAAS QUANTUM-WELLS DEPENDING ON MOVPE GROWTH-CONDITIONS/
Authors: ZEIMER U BUGGE F GRAMLICH S URBAN I OSTER A WEYERS M
Citation: U. Zeimer et al., HIGH-RESOLUTION X-RAY-DIFFRACTION INVESTIGATION OF CRYSTAL PERFECTIONAND RELAXATION OF GAAS INGAAS/GAAS QUANTUM-WELLS DEPENDING ON MOVPE GROWTH-CONDITIONS/, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 19(2-4), 1997, pp. 369-376
INFLUENCE OF THE GROWTH TEMPERATURE AND SUBSTRATE ORIENTATION ON THE LAYER PROPERTIES OF MOVPE-GROWN (GA,IN)(AS,P) GAAS/
Authors: KNAUER A RECHENBERG I BUGGE F GRAMLICH S OELGARDT G OSTER A WEYERS M
Citation: A. Knauer et al., INFLUENCE OF THE GROWTH TEMPERATURE AND SUBSTRATE ORIENTATION ON THE LAYER PROPERTIES OF MOVPE-GROWN (GA,IN)(AS,P) GAAS/, Journal of crystal growth, 170(1-4), 1997, pp. 281-286
STABLE OPERATION OF INGAAS INGAP/ALGAAS (LAMBDA=1020 NM) LASER-DIODES/
Authors: ERBERT G BEISTER G BUGGE F MAEGE J RESSEL P SEBASTIAN J VOGEL K WENZEL H WEYERS M
Citation: G. Erbert et al., STABLE OPERATION OF INGAAS INGAP/ALGAAS (LAMBDA=1020 NM) LASER-DIODES/, Electronics Letters, 33(9), 1997, pp. 778-779
EVALUATION OF STRAINED INGAAS GAAS QUANTUM-WELLS BY ATOMIC-FORCE MICROSCOPY/
Authors: SATO M ZEIMER U BUGGE F GRAMLICH S WEYERS M
Citation: M. Sato et al., EVALUATION OF STRAINED INGAAS GAAS QUANTUM-WELLS BY ATOMIC-FORCE MICROSCOPY/, Applied physics letters, 70(9), 1997, pp. 1134-1136
TEMPERATURE-DEPENDENT EBIC AND DEEP-LEVEL TRANSIENT SPECTROSCOPY INVESTIGATION OF DIFFERENT TYPES OF MISFIT-DISLOCATIONS AT MOVPE GROWN GAAS INGAAS/GAAS-SINGLE-QUANTUM WELLS/
Authors: PANEPINTO L ZEIMER U SEIFERT W SEIBT M BUGGE F WEYERS M SCHROTER W
Citation: L. Panepinto et al., TEMPERATURE-DEPENDENT EBIC AND DEEP-LEVEL TRANSIENT SPECTROSCOPY INVESTIGATION OF DIFFERENT TYPES OF MISFIT-DISLOCATIONS AT MOVPE GROWN GAAS INGAAS/GAAS-SINGLE-QUANTUM WELLS/, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 77-81
EFFECT OF GROWTH TEMPERATURE ON PERFORMANCE OF ALGAAS INGAAS/GAAS QW LASER-DIODES/
Authors: BUGGE F ERBERT G PROCOP M RECHENBERG I ZEIMER U WEYERS M
Citation: F. Bugge et al., EFFECT OF GROWTH TEMPERATURE ON PERFORMANCE OF ALGAAS INGAAS/GAAS QW LASER-DIODES/, Journal of electronic materials, 25(2), 1996, pp. 309-312
TEM CHARACTERIZATION OF THE INTERFACE QUALITY OF MOVPE GROWN STRAINEDINGAAS GAAS HETEROSTRUCTURES/
Authors: HOPNER A SEITZ H RECHENBERG I BUGGE F PROCOP M SCHEERSCHMIDT K QUEISSER HJ
Citation: A. Hopner et al., TEM CHARACTERIZATION OF THE INTERFACE QUALITY OF MOVPE GROWN STRAINEDINGAAS GAAS HETEROSTRUCTURES/, Physica status solidi. a, Applied research, 150(1), 1995, pp. 427-437
POTENTIAL SOURCES OF DEGRADATION IN INGAAS GAAS LASER-DIODES/
Authors: RECHENBERG I BEISTER G BUGGE F ERBERT G GRAMLICH S KLEIN A MAEGE J PILATZEK M RICHTER U RUVIMOV SS TREPTOW H WEYERS M
Citation: I. Rechenberg et al., POTENTIAL SOURCES OF DEGRADATION IN INGAAS GAAS LASER-DIODES/, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 310-313
EFFECT OF GROWTH INTERRUPTION ON PERFORMANCE OF ALGAAS INGAAS/GAAS QUANTUM-WELL LASERS/
Authors: BUGGE F BEISTER G ERBERT G GRAMLICH S RECHENBERG I TREPTOW H WEYERS M
Citation: F. Bugge et al., EFFECT OF GROWTH INTERRUPTION ON PERFORMANCE OF ALGAAS INGAAS/GAAS QUANTUM-WELL LASERS/, Journal of crystal growth, 145(1-4), 1994, pp. 907-910
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