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Results: 1-25/27
Authors:
OSTEN HJ
BUGIEL E
ZAUMSEIL P
Citation: Hj. Osten et al., SELF-ORGANIZATION DURING SI1-YCY ALLOY LAYER GROWTH ON SI(001) USING HOMOGENEOUS COEVAPORATION, Journal of applied physics, 82(1), 1997, pp. 231-235
Authors:
OSTEN HJ
BUGIEL E
Citation: Hj. Osten et E. Bugiel, RELAXED SI1-XGEX SI1-X-YGEXCY BUFFER STRUCTURES WITH LOW THREADING DISLOCATION DENSITY/, Applied physics letters, 70(21), 1997, pp. 2813-2815
Authors:
OSTEN HJ
ENDISCH D
BUGIEL E
DIETRICH B
FISCHER GG
KIM M
KRUGER D
ZAUMSEIL P
Citation: Hj. Osten et al., STRAIN RELAXATION IN TENSILE-STRAINED SI1-YCY LAYERS ON SI(001), Semiconductor science and technology, 11(11), 1996, pp. 1678-1687
Authors:
ZEINDL HP
NILSSON S
BUGIEL E
Citation: Hp. Zeindl et al., DIFFUSION PHENOMENA IN MBE GROWN SI SIGE SINGLE QUANTUM-WELLS STUDIEDBY PL AND TEM MEASUREMENTS/, Applied surface science, 92, 1996, pp. 552-556
Authors:
BRUNNER K
EBERL K
WINTER W
BUGIEL E
Citation: K. Brunner et al., GROWTH AND CHARACTERIZATION OF GE1-YCY SI SUPERLATTICE STRUCTURES ON SI SUBSTRATES/, Applied surface science, 102, 1996, pp. 17-21
Authors:
ZEINDL HP
NILSSON S
JAGDHOLD U
KLATT J
KURPS R
KRUGER D
BUGIEL E
Citation: Hp. Zeindl et al., INFLUENCE OF INTERDIFFUSION AND SURFACTANTS ON SI SIGE HETEROINTERFACES/, Applied surface science, 102, 1996, pp. 107-111
Authors:
MEHR W
WOLFF A
FRANKENFELD H
SKALOUD T
HOPPNER W
BUGIEL E
LARZ J
HUNGER B
Citation: W. Mehr et al., ULTRA SHARP CRYSTALLINE SILICON TIP ARRAY USED AS FIELD EMITTER, Microelectronic engineering, 30(1-4), 1996, pp. 395-398
Authors:
SCHOISSWOHL M
CANTIN JL
CHAMARRO M
VONBARDELEBEN HJ
MORGENSTERN T
BUGIEL E
KISSINGER W
ANDREU RC
Citation: M. Schoisswohl et al., DEFECTS AND VISIBLE PHOTOLUMINESCENCE IN POROUS SI1-XGEX, Thin solid films, 276(1-2), 1996, pp. 92-95
Authors:
DIETRICH B
BUGIEL E
FRANKENFELDT H
HARKER AH
JAGDHOLD U
TILLACK B
WOLFF A
Citation: B. Dietrich et al., STRAIN-MEASUREMENT IN THIN PSEUDOMORPHIC SIGE LAYERS OF SUBMICRON WIRES USING RAMAN-SPECTROSCOPY, Solid-state electronics, 40(1-8), 1996, pp. 307-310
Authors:
SCHOISSWOHL M
CANTIN JL
CHAMARRO M
VONBARDELEBEN HJ
MORGENSTERN T
BUGIEL E
KISSINGER W
ANDREU RC
Citation: M. Schoisswohl et al., STRUCTURE AND VISIBLE PHOTOLUMINESCENCE OF POROUS SI1-XGEX, Physical review. B, Condensed matter, 52(16), 1995, pp. 11898-11903
Authors:
OSTEN HJ
RUCKER H
METHFESSEL M
BUGIEL E
RUVIMOV S
LIPPERT G
Citation: Hj. Osten et al., STRAIN-STABILIZED STRUCTURES ON SILICON GROWN WITH MBE, Journal of crystal growth, 157(1-4), 1995, pp. 405-409
Authors:
RUVIMOV S
BUGIEL E
OSTEN HJ
Citation: S. Ruvimov et al., STRUCTURAL CHARACTERIZATION OF SINC DELTA-LAYERS EMBEDDED IN A SILICON MATRIX, Journal of applied physics, 78(4), 1995, pp. 2323-2327
Authors:
FISCHER GG
ZAUMSEIL P
BUGIEL E
OSTEN HJ
Citation: Gg. Fischer et al., INVESTIGATION OF THE HIGH-TEMPERATURE BEHAVIOR OF STRAINED SI1-YCY SIHETEROSTRUCTURES/, Journal of applied physics, 77(5), 1995, pp. 1934-1937
Authors:
RUCKER H
METHFESSEL M
BUGIEL E
OSTEN HJ
Citation: H. Rucker et al., STRAIN-STABILIZED HIGHLY CONCENTRATED PSEUDOMORPHIC SI1-XCX LAYERS INSI, Physical review letters, 72(22), 1994, pp. 3578-3581
Authors:
OSTEN HJ
ZEINDL HP
BUGIEL E
Citation: Hj. Osten et al., CONSIDERATIONS ABOUT THE CRITICAL THICKNESS FOR PSEUDOMORPHIC SI1-XGEX GROWTH ON SI(001), Journal of crystal growth, 143(3-4), 1994, pp. 194-199
Authors:
OSTEN HJ
BUGIEL E
ZAUMSEIL P
Citation: Hj. Osten et al., ANTIMONY-MEDIATED GROWTH OF EPITAXIAL GE1-YCY LAYERS ON SI(001), Journal of crystal growth, 142(3-4), 1994, pp. 322-326
Authors:
KISSINGER W
OSTEN HJ
LIPPERT G
DIETRICH B
BUGIEL E
Citation: W. Kissinger et al., DEPENDENCE OF THE INTERFACE SHARPNESS OF A GE SINGLE-QUANTUM-WELL ON MOLECULAR-BEAM-EPITAXIAL GROWTH-CONDITIONS, Journal of applied physics, 76(12), 1994, pp. 8042-8047
Authors:
KRUGER D
MORGENSTERN T
KURPS R
BUGIEL E
QUICK C
KUHNE H
Citation: D. Kruger et al., OXYGEN INCORPORATION AND OXYGEN-INDUCED DEFECT FORMATION IN THIN SI AND SI1-XGEX LAYERS ON SILICON GROWN BY CHEMICAL-VAPOR-DEPOSITION AT ATMOSPHERIC-PRESSURE, Journal of applied physics, 75(12), 1994, pp. 7829-7834
Authors:
KLATT J
KRUGER D
BUGIEL E
OSTEN HJ
Citation: J. Klatt et al., BORON-CONTROLLED SOLID-PHASE EPITAXY OF GERMANIUM ON SILICON - A NEW NONSEGREGATING SURFACTANT, Applied physics letters, 64(3), 1994, pp. 360-362
Authors:
OSTEN HJ
BUGIEL E
ZAUMSEIL P
Citation: Hj. Osten et al., GROWTH OF AN INVERSE TETRAGONAL DISTORTED SIGE LAYER ON SI(001) BY ADDING SMALL AMOUNTS OF CARBON, Applied physics letters, 64(25), 1994, pp. 3440-3442
Authors:
OSTEN HJ
BUGIEL E
DIETRICH B
KISSINGER W
Citation: Hj. Osten et al., IMPURITY-MEDIATED GROWTH AND CHARACTERIZATION OF THIN PSEUDOMORPHIC GERMANIUM LAYERS IN SILICON, Applied physics letters, 64(13), 1994, pp. 1723-1725
Authors:
BUGIEL E
DIETRICH B
OSTEN HJ
Citation: E. Bugiel et al., MOLECULAR-BEAM EPITAXY OF STRAINED SI1-XGEX LAYERS ON PATTERNED SUBSTRATES, Journal of crystal growth, 130(3-4), 1993, pp. 611-616
Authors:
OSTEN HJ
KLATT J
LIPPERT G
BUGIEL E
Citation: Hj. Osten et al., SURFACTANT-MEDIATED GROWTH OF GERMANIUM ON SI(100) BY MBE AND SPE, Journal of crystal growth, 127(1-4), 1993, pp. 396-400
Authors:
DIETRICH B
BUGIEL E
KLATT J
LIPPERT G
MORGENSTERN T
OSTEN HJ
ZAUMSEIL P
Citation: B. Dietrich et al., MEASUREMENT OF STRESS AND RELAXATION IN SI1-XGEX LAYERS BY RAMAN LINESHIFT AND X-RAY-DIFFRACTION, Journal of applied physics, 74(5), 1993, pp. 3177-3180
Authors:
OSTEN HJ
KLATT J
LIPPERT G
BUGIEL E
HIGUCHI S
Citation: Hj. Osten et al., SURFACTANT-MEDIATED GROWTH OF GERMANIUM ON SILICON (001) WITH SUBMONOLAYER COVERAGE OF SB AND TE, Journal of applied physics, 74(4), 1993, pp. 2507-2511