ACNP - Italian Periodicals Catalogue

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Results: 1-9 |

Results: 9

Quantum corrections to the electrical conduction in an AlGaN/GaN heterostructure

Authors: Dziuba, Z Gorska, M Antoszewski, J Babinski, A Kozodoy, P Keller, S Keller, B DenBaars, SP Mishra, UK

Citation: Z. Dziuba et al., Quantum corrections to the electrical conduction in an AlGaN/GaN heterostructure, APPL PHYS A, 72(6), 2001, pp. 691-698

Dynamics of photoexcited carriers in GaInAs/GaAs quantum dots

Authors: Ilczuk, E Korona, KP Babinski, A Kuhl, J

Citation: E. Ilczuk et al., Dynamics of photoexcited carriers in GaInAs/GaAs quantum dots, ACT PHY P A, 100(3), 2001, pp. 379-386

Step-like photoluminescence dynamics in field-effect structures containingquantum dots

Authors: Korona, KP Babinski, A Kuhl, J Baranowski, JM Leon, R

Citation: Kp. Korona et al., Step-like photoluminescence dynamics in field-effect structures containingquantum dots, PHYS ST S-B, 227(2), 2001, pp. 605-612

Rapid thermal annealing of InAs/GaAs quantum dots under a GaAs proximity cap

Authors: Babinski, A Jasinski, J Bozek, R Szepielow, A Baranowski, JM

Citation: A. Babinski et al., Rapid thermal annealing of InAs/GaAs quantum dots under a GaAs proximity cap, APPL PHYS L, 79(16), 2001, pp. 2576-2578

Electroluminescence from a forward-biased Schottky barrier diode on modulation Si delta-doped GaAs/InGaAs/AlGaAs heterostructure

Authors: Babinski, A Witczak, P Twardowski, A Baranowski, JM

Citation: A. Babinski et al., Electroluminescence from a forward-biased Schottky barrier diode on modulation Si delta-doped GaAs/InGaAs/AlGaAs heterostructure, APPL PHYS L, 78(25), 2001, pp. 3992-3994

The effect of electron occupation on the photoluminescence from the self-organised InGaAs/GaAs quantum dots

Authors: Babinski, A Baranowski, JM

Citation: A. Babinski et Jm. Baranowski, The effect of electron occupation on the photoluminescence from the self-organised InGaAs/GaAs quantum dots, PHYS ST S-A, 178(1), 2000, pp. 313-316

Transport and quantum electron mobility in the modulation Si delta-doped pseudomorphic GaAs/In0.2Ga0.8As/Al0.2Ga0.8As quantum well grown by metalorganic vapor phase epitaxy

Authors: Babinski, A Siwiec-Matuszyk, J Baranowski, JM Li, G Jagadish, C

Citation: A. Babinski et al., Transport and quantum electron mobility in the modulation Si delta-doped pseudomorphic GaAs/In0.2Ga0.8As/Al0.2Ga0.8As quantum well grown by metalorganic vapor phase epitaxy, APPL PHYS L, 77(7), 2000, pp. 999-1001

Electroreflectance bias-wavelength mapping of the modulation Si delta-doped pseudomorphic GaAs/InGaAs/AlGaAs structure

Authors: Tomaszewicz, T Babinski, A Suska, D Baranowski, JM Tomaszewicz, A

Citation: T. Tomaszewicz et al., Electroreflectance bias-wavelength mapping of the modulation Si delta-doped pseudomorphic GaAs/InGaAs/AlGaAs structure, APPL PHYS L, 75(14), 1999, pp. 2088-2090

Si and C delta-doping for device applications

Authors: Li, G Johnston, MB Babinski, A Yuan, S Gal, M Chua, SJ Jagadish, C

Citation: G. Li et al., Si and C delta-doping for device applications, J CRYST GR, 195(1-4), 1998, pp. 54-57

Risultati: 1-9 |